Experimental evaluation of an optimized radiation cooling geometry for ion projection lithography masks

Torres, Jose Luis Chavez; Nounu, Hatem N.; Wasson, James R.; Wolfe, J. C.; Lutz, Jordan; Haugeneder, E.; Löschner, H.; Stengl, G.; Kaesmaier, Rainer

doi:10.1116/1.1314380

Cited by 5 publications

(2 citation statements)

References 8 publications

(1 reference statement)

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“…This can be prevented (concept, not yet experimentally established) by exposing the stencil mask at the same time to a light beam with opposite complementary intensity distribution, thus ensuring a uniform power density at the stencil mask. Under these conditions, radiation cooling concepts 13,14,15 can be applied to keep the stencil mask at room temperature. …”

Section: Electronic Ion Beam Intensitiy Profile Adjustments For Unifomentioning

confidence: 99%

Masked ion beam lithography and direct structuring on curved surfaces

et al. 2003

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We have previously demonstrated (a depth of focus of several millimeters in masked ion beam lithography (MIBL). This work illustrates the use of this capability to pattern concave and convex spherical substrates 25 mm in diameter and 5.5 mm deep. Features as small as 175nm were printed across a convex substrate with 75 keV He + ions where the mask-to-wafer gap varied from 1 mm on the center to 6.5 mm on the edge. We also demonstrate, for the first time, the fabrication of 800 nm features in a 4 nm thick Cr coating by masked ion beam direct structuring (MIBS), where 45 keV Argon ions sputter the film through a stencil mask. We demonstrate electronic adjustment of the radial beam profile of the incident ion beam to compensate for the continuously changing angle between the beam and the spherical substrate, thus achieving constant exposure dose (for MIBL) or sputtering rate (for MIBS) a 50 x 50 mm 2 field.

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Section: Electronic Ion Beam Intensitiy Profile Adjustments For Unifomentioning

confidence: 99%

Masked ion beam lithography and direct structuring on curved surfaces

et al. 2003

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“…As indicated by Riordon et al.,34 a cooled cylinder can be placed around the mask, and can effectively cool the mask to more than 20 °C below the ambient temperature. Also, as discussed by Torres et al 35. and Braun et al.,36 since the mask is cooled the same way as it is heated, namely by radiation, radiation cooling can be used to minimize the thermal distortions of the stencil masks at high irradiation intensity.…”

Section: Projection Masks and Resistsmentioning

confidence: 99%

Recent Developments in Nanofabrication Using Ion Projection Lithography

Tseng

2005

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Ion projection lithography (IPL) is an emerging technology and a major candidate for the next-generation lithography (NGL) designed to complement and supplement current optical lithographic techniques for future chip manufacturing. In this Review, the recent developments of IPL technology are examined with an emphasis on its ability to fabricate a wide variety of nanostructures for the semiconductor industry. Following an introduction of the uniqueness and strength of the technology, the basics of ion-source development and ion-target interactions with and without chemical enhancement are presented. The developments in equipment systems, masks, and resists are subsequently studied. The resolution of printed nanostructures and the corresponding throughput of the current system are assessed for NGL. Finally, concluding remarks are presented to summarize the strengths and weaknesses of the current technology and to suggest the scope for future improvement.

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Bibliography (1994–2004) of other topics

Mackerle¹

2004

Modelling Simul. Mater. Sci. Eng.

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Experimental evaluation of an optimized radiation cooling geometry for ion projection lithography masks

Abstract: High precision stress measurement of ion projection lithography mask membranesFabrication of open stencil masks with asymmetric void ratio for the ion projection lithography space charge experiment J.Experimental results of the stochastic Coulomb interaction in ion projection lithography

Cited by 5 publications

References 8 publications

Masked ion beam lithography and direct structuring on curved surfaces

Masked ion beam lithography and direct structuring on curved surfaces

Recent Developments in Nanofabrication Using Ion Projection Lithography

Bibliography (1994–2004) of other topics

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