2003
DOI: 10.1117/12.482716
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Masked ion beam lithography and direct structuring on curved surfaces

Abstract: We have previously demonstrated (a depth of focus of several millimeters in masked ion beam lithography (MIBL). This work illustrates the use of this capability to pattern concave and convex spherical substrates 25 mm in diameter and 5.5 mm deep. Features as small as 175nm were printed across a convex substrate with 75 keV He + ions where the mask-to-wafer gap varied from 1 mm on the center to 6.5 mm on the edge. We also demonstrate, for the first time, the fabrication of 800 nm features in a 4 nm thick Cr coa… Show more

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“…Reactive ion etching also uses either a resist or an inorganic pattern to mask the pattern transfer, ditto with ion milling. Recently, there is a proposal to take advantage of the large DOF of ionbeam proximity image for curved surfaces 26 . Direct writing ion-beam machines were available as early as 1979.…”
Section: Marching Of the Ion-beam Lithography Horsementioning
confidence: 99%
“…Reactive ion etching also uses either a resist or an inorganic pattern to mask the pattern transfer, ditto with ion milling. Recently, there is a proposal to take advantage of the large DOF of ionbeam proximity image for curved surfaces 26 . Direct writing ion-beam machines were available as early as 1979.…”
Section: Marching Of the Ion-beam Lithography Horsementioning
confidence: 99%