Experimental Demonstration of AlN Heat Spreaders for the Monolithic Integration of Inline Phase-Change Switches

El-Hinnawy, Nabil; Borodulin, Pavel; King, Matthew R.; Furrow, Colin; Padilla, Carlos R.; Ezis, A.; Nichols, D.; Paramesh, Jeyanandh; Bain, James A.; Young, Robert M.

doi:10.1109/led.2018.2806383

Cited by 14 publications

(5 citation statements)

References 19 publications

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“…Similarly, the heating and cooling times are shorter than in the underlapped structure. These results are in agreement with previous work [6], [23].…”

Section: B Two-pulse Measurementssupporting

confidence: 94%

“…For this sample, the extracted full quenching time is ∼300 ns (τ quench = 135 ns). This large τ quench is consistent with the large thermal time constant expected in indirectly heated switches [23]. The final state of the device cannot be precisely determined during the transient with our setup since the measured voltage on CH2 is in most cases within the noise floor.…”

Section: B Two-pulse Measurementssupporting

confidence: 79%

“…The estimated T cryst for sub-μm pulses is ∼350 • C, similar to the estimation in [9]. The measured crystallization time is approximately 400 ns, which is shorter than the time reported in [6] and [23] and in our previous work [7]. Using this result, set pulses of 400 ns are used on the overlapped sample, which results in full crystallization [see Fig.…”

Section: B Two-pulse Measurementssupporting

confidence: 75%

See 2 more Smart Citations

Indirectly Heated Switch as a Platform for Nanosecond Probing of Phase Transition Properties in Chalcogenides

Wainstein

Ankonina

Swoboda

et al. 2021

IEEE Trans. Electron Devices

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Although phase-change materials (PCMs) have been studied for more than 50 years, temperaturedependent characterization of the phase transition dynamics remains challenging due to the lack of nanosecond-nanoscale thermometry. In this article, we utilize the four-terminal, indirectly heated phasechange switch (IPCS), which was originally designed for nonvolatile radio frequency (RF) applications, as an ultrafast electrothermal platform to study PCM. We propose a novel experimental setup that allows nanosecond probing of the transient resistance of the PCM, beyond the melting temperature (>1100 K), due to the built-in electrical isolation between the PCM path and the thermal actuation path of the IPCS. The embedded metallic heater can induce reversible phase transitions between the crystalline and amorphous phases of the PCM. Our platform enables simultaneous measurements of the dynamics of PCM resistance (as a probe for the phase of the material) and heater temperature, during the application of heating pulses. Furthermore, we map the surface temperature of the IPCS at steady state by scanning thermal microscopy (SThM) and show the effect of cooling by electrodes in devices with overlap between the heater and PCM contacts. Our method can be used to study chalcogenides and other amorphous semiconductors for reconfigurable electronics and neuromorphic hardware.

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“…Similarly, the heating and cooling times are shorter than in the underlapped structure. These results are in agreement with previous work [6], [23].…”

Section: B Two-pulse Measurementssupporting

confidence: 94%

Section: B Two-pulse Measurementssupporting

confidence: 79%

Section: B Two-pulse Measurementssupporting

confidence: 75%

See 1 more Smart Citation

Indirectly Heated Switch as a Platform for Nanosecond Probing of Phase Transition Properties in Chalcogenides

Wainstein

Ankonina

Swoboda

et al. 2021

IEEE Trans. Electron Devices

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“…Indeed, thermal engineering by appropriate material selection and device design may be critical to being able to integrate PCM-based RF switches with the reduced power consumption, faster switching speeds, and increased lifetimes required for the most stressing applications. For example, substitution of more thermally conductive AlN for SiN or SiO 2 dielectric thermal layers has been shown to reduce device capacitance [396] and enable integration on arbitrary substrates [397]. Additionally, incorporation of more complex active layers, including quaternary PCMs with optimized electrical properties [398] or interfacial (or superlattice) PCMs with enhanced crystallization due to interface-mediated nucleation [399,400], may be required to increase switching speeds and lower switching power while retaining RF performance.…”

Section: Phase Change Material-based Radio Frequencymentioning

confidence: 99%

Applications and Impacts of Nanoscale Thermal Transport in Electronics Packaging

Warzoha

Wilson

Donovan

et al. 2021

Journal of Electronic Packaging

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This review introduces relevant nanoscale thermal transport processes that impact thermal abatement in power electronics applications. Specifically, we highlight the importance of nanoscale thermal transport mechanisms at each layer in material hierarchies that make up modern electronic devices. This includes those mechanisms that impact thermal transport through: (1) substrates, (2) interfaces and 2-D materials and (3) heat spreading materials. For each material layer, we provide examples of recent works that (1) demonstrate improvements in thermal performance and/or (2) improve our understanding of the relevance of nanoscale thermal transport across material junctions. We end our discussion by highlighting several additional applications that have benefited from a consideration of nanoscale thermal transport phenomena, including RF electronics and neuromorphic computing.

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“…and insulators often used are SiO 2 , SiN x , AlN [ 23 , 28 , 75 , 96 , 97 , 98 , 99 , 100 ]. AlN can also be a heat spreader to reduce the consumption of PCSs [ 101 ]. Table 3 lists the commonly used combinations of substrate and insulator.…”

Section: Gete-based Phase-change Switches (Pcss) For Rf Applicationmentioning

confidence: 99%

A Review on Material Selection Benchmarking in GeTe-Based RF Phase-Change Switches for Each Layer

Qu,

Gao,

Wang

et al. 2024

Micromachines

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The global demand for radio frequency (RF) modules and components has grown exponentially in recent decades. RF switches are the essential unit in RF front-end and reconfigurable systems leading to the rapid development of novel and advanced switch technology. Germanium telluride (GeTe), as one of the Chalcogenide phase-change materials, has been applied as an RF switch due to its low insertion loss, high isolation, fast switching speed, and low power consumption in recent years. In this review, an in-depth exploration of GeTe film characterization is presented, followed by a comparison of the device structure of directly heated and indirectly heated RF phase-change switches (RFPCSs). Focusing on the prototypical structure of indirectly heated RFPCSs as the reference, the intrinsic properties of each material layer and the rationale behind the material selection is analyzed. Furthermore, the design size of each material layer of the device and its subsequent RF performance are summarized. Finally, we cast our gaze toward the promising future prospects of RFPCS technology.

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Experimental Demonstration of AlN Heat Spreaders for the Monolithic Integration of Inline Phase-Change Switches

Cited by 14 publications

References 19 publications

Indirectly Heated Switch as a Platform for Nanosecond Probing of Phase Transition Properties in Chalcogenides

Indirectly Heated Switch as a Platform for Nanosecond Probing of Phase Transition Properties in Chalcogenides

Applications and Impacts of Nanoscale Thermal Transport in Electronics Packaging

A Review on Material Selection Benchmarking in GeTe-Based RF Phase-Change Switches for Each Layer

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