Experimental and theoretical studies of Cu2O solar cells

Olsen, L. C.; Addis, F.W.; Miller, W.

doi:10.1016/0379-6787(82)90050-3

Cited by 352 publications

(221 citation statements)

References 13 publications

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“…As a semiconductor, this material has been studied since early fifties, however, efficiencies of the resulted solar cells were limited to about 2% (5). It has been identified that one of the possibility to overcome this problem is to produce homojunction of Cu 2 O (1,5 ). For this it is important to develop n-type Cu 2 O material.…”

Section: Introductionmentioning

confidence: 99%

“…Cu 2 O is generally a p-type material due to a stoichiometry defect of copper ion vacancies (3,4). As a semiconductor, this material has been studied since early fifties, however, efficiencies of the resulted solar cells were limited to about 2% (5). It has been identified that one of the possibility to overcome this problem is to produce homojunction of Cu 2 O (1,5 ).…”

Section: Introductionmentioning

confidence: 99%

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Electrodeposition of n-type Cuprous Oxide Thin Films

Siripala

2008

ECS Trans.

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Cuprous oxide (Cu2O) is generally a p-type semiconductor material due to the Cu ion vacancies exist in the crystal lattice. The technique of electrodeposition provides the possibility of depositing Cu2O thin films resulting n-type photoresponses in solar cell devices. By maintaining pH values of the depositing aqueous acetate bath in an appropriate range, Cu2O thin films can be potentiostatically electrodeposited. Single phase Cu2O polycrystalline films can be obtained using this technique. The n-type behavior and the quality of the Cu2O films produced by this technique are demonstrated by the photocurrent, capacitance-voltage, SEM and XRD measurements. Existence of oxygen vacancies in the n-Cu2O films is evident from the photoluminescence measurements. Possibility of using these films in low cost solar cell devices is demonstrated after establishing the n-Cu2O/p-CuxS hetero junction by sulphiding Cu2O thin films.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Electrodeposition of n-type Cuprous Oxide Thin Films

Siripala

2008

ECS Trans.

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“…In the past few decades, Cu 2 O gained attention as an earth-abundant semiconductor with promising photovoltaic properties including high absorption and long minority carrier diffusion length around 5 µm [1,2]. It is composed of non-toxic elements and can be easily fabricated by thermal oxidation of Cu foils.…”

Section: Introductionmentioning

confidence: 99%

Single phase, single orientation Cu2O (1 0 0) and (1 1 0) thin films grown by plasma-assisted molecular beam epitaxy

Tolstova

Wilson

Atwater

2015

Journal of Crystal Growth

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This is a PDF file of an unedited manuscript that has been accepted for publication. As a service to our customers we are providing this early version of the manuscript. The manuscript will undergo copyediting, typesetting, and review of the resulting galley proof before it is published in its final citable form. Please note that during the production process errors may be discovered which could affect the content, and all legal disclaimers that apply to the journal pertain. AbstractEpitaxial growth of cuprous oxide (Cu 2 O) has been achieved on (1 0 0) and (1 1 0) orientations of MgO by plasma-assisted molecular beam epitaxy. Growth was investigated using a pure oxygen plasma as well as a 90%Ar/10%O 2 plasma. Cu 2 O films grown using pure oxygen on MgO (1 0 0) have a limited growth window and typically exhibit multiple phases and orientations. Films grown on MgO (1 1 0) using pure oxygen are phase stable and predominantly (1 1 0) oriented, with some (2 0 0) orientation present. Films grown using an Ar/O 2 plasma on MgO (1 0 0) have improved phase stability and a single (1 1 0) orientation. Growth on MgO (1 1 0) using an Ar/O 2 plasma yields highly reproducible (1 1 0) oriented single phase Cu 2 O films with a much wider growth window, suggesting that this substrate orientation is preferable for Cu 2 O phase stability.

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“…It has huge potential for application to photovoltaic cells [1][2][3], to be more specific for the top layer in a tandem structure. This is because of the fact that has a high absorption coefficient in the visible region.…”

Section: Introductionmentioning

confidence: 99%

Improvement of Photovoltaic Conversion Efficiency and also Photoluminescence Efficiency of p-Cu2O/n-ZnO thin film heterostructures by Cyanide Treatment

Paul¹

2017

IJRASET

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Crown-ether cyanide (CN) treatments of the as deposited polycrystalline p-Cu 2 O/i-ZnO/n-ZnO/glass heterojunction photovoltaic structures were performed with the variation of time. Effects of defect passivation and improvement of photovoltaic conversion efficiency as well as photoluminescence efficiency were demonstrated with the cyanide treated samples. Optimum time of cyanide treatment was found to be 3 minutes.

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Experimental and theoretical studies of Cu2O solar cells

Cited by 352 publications

References 13 publications

Electrodeposition of n-type Cuprous Oxide Thin Films

Electrodeposition of n-type Cuprous Oxide Thin Films

Single phase, single orientation Cu2O (1 0 0) and (1 1 0) thin films grown by plasma-assisted molecular beam epitaxy

Improvement of Photovoltaic Conversion Efficiency and also Photoluminescence Efficiency of p-Cu2O/n-ZnO thin film heterostructures by Cyanide Treatment

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