Experimental and numerical correlation between current-collapse and fe-doping profiles in GaN HEMTs

Chini, Alessandro; Lecce, Valerio Di; Soci, Fabio; Bisi, Davide; Stocco, Antonio; Meneghini, Matteo; Meneghesso, G.; Zanoni, Enrico; Gasparotto, Alberto

doi:10.1109/irps.2012.6241881

Cited by 17 publications

(9 citation statements)

References 4 publications

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“…Similar results have been reported in several research works on deep-level transient spectroscopy in (Al)GaN layers [6] [7] [8] [9]. Different research works reported that the irondoping may be the cause for enhanced currentdispersion effects [10] [11] [12]. Consistently with our results, enhanced dispersion-effects are ascribed to enhanced density of the deep-trap-level E C -0.56 eV / 10 -15 cm 2 , labelled in this work as E2.…”

Section: Pulsed I-v and Drain Current Transient Spectroscopysupporting

confidence: 89%

Effects of buffer compensation strategies on the electrical performance and RF reliability of AlGaN/GaN HEMTs

Bisi

Stocco

Rossetto

et al. 2015

Microelectronics Reliability

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The effects of buffer compensation strategies on the electrical performance and RF reliability of AlGaN/GaN HEMTs have been studied by means of static and dynamic I-V measurements, drain-current transient spectroscopy, XRD, and RF stress tests. Devices equipped with C-doped and Fe-doped GaN buffer feature improved subthreshold behaviour (lower source-to-drain leakage current, and lower DIBL) and improved RF reliability. As a drawback, devices equipped with Fe- and C-doping experience higher dynamic current dispersion, ascribed to higher concentration of the deep levels E2 (0.56 eV/10- 15 cm2) and E4 (0.84 eV/10- 14 cm2)

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Section: Pulsed I-v and Drain Current Transient Spectroscopysupporting

confidence: 89%

Effects of buffer compensation strategies on the electrical performance and RF reliability of AlGaN/GaN HEMTs

Bisi

Stocco

Rossetto

et al. 2015

Microelectronics Reliability

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“…DCTs can be recorded with a sensing condition lying in the linear [368], [484], [485] or in the saturation region [390], [486], [487]. Significantly different results might be obtained when comparing results obtained in the linear and saturation region [481].…”

Section: Bias Conditionsmentioning

confidence: 99%

GaN-based power devices: Physics, reliability, and perspectives

Meneghini

Santi

Abid

et al. 2021

Journal of Applied Physics

250

126

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Over the last decade, gallium nitride has emerged as an excellent material for the fabrication of power devices. Among the semiconductors for which power devices are already available on the market, GaN has the widest energy gap, the largest critical field, the highest saturation velocity, thus representing an excellent material for the fabrication of high speed/high voltage components.The presence of spontaneous and piezoelectric polarization allows to create a 2-dimensional electron gas, with high mobility and large channel density, in absence of any doping, thanks to the use of AlGaN/GaN heterostructures. This contributes to minimize resistive losses; at the same time, for GaN transistors switching losses are very low, thanks to the small parasitic capacitances and switching charges. Device scaling and monolithic integration enable high frequency operation, with consequent advantages in terms of miniaturization.For high power/high voltage operation, vertical device architectures are being proposed and investigated, and 3-dimensional structuresfin-shaped, trench-structured, nanowire-basedare demonstrating a great potential. Contrary to silicon, GaN is a relatively young material: trapping and degradation processes must be understood and described in detail, with the aim of optimizing device stability and reliability. This tutorial paper describes the physics, technology and reliability of GaN-based power devices: in the first part of the article, starting from a discussion of the main properties of the material, the characteristics of lateral and vertical GaN transistors are discussed in detail, to provide guidance in this complex and interesting field. The second part of the paper focuses on trapping and reliability aspects: the physical origin of traps in GaN, and the main degradation mechanisms are discussed in detail. The wide set of referenced papers and the insight on the most relevant aspects gives the reader a comprehensive overview on present and next-generation GaN electronics. IntroductionOver the past decade, gallium nitride has emerged as an excellent material for the fabrication of power semiconductor devices. Thanks to the unique properties of GaN, diodes and transistors based on this material have excellent performance, compared to their silicon counterparts, and are expected to find wide application in the next-generation power converters. Owing to the flexibility and the energy efficiency of GaN-based power converters, the interest towards this technology is rapidly growing: the aim of this tutorial is to review the most relevant physical properties, the operating principles, the fabrication parameters, and the stability/reliability issues of GaN-based power transistors. For introductory purposes, we start summarizing the physical reasons why GaN transistors achieve a much better performance than the corresponding silicon devices, to help the reader understanding the unique advantages of this technology.The properties of GaN devices allow the fabrication of high-efficiency (near or above 99 %)...

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“…Secondary ion mass spectrometry (SIMS) measurements were undertaken on similar wafers [shown in Fig. 3(b)] [10], [11]. Both wafers incorporated a conventional Fe doping profile in the GaN bulk to suppress short-channel effects, having a peak density of 3 × 10 18 cm −3 , which decreased exponentially towards the surface.…”

Section: Device Under Test and Measurementsmentioning

confidence: 99%

“Kink” in AlGaN/GaN-HEMTs: Floating Buffer Model

Singh

Uren

Martin

et al. 2018

IEEE Trans. Electron Devices

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We report on a floating buffer model to explain "kink," a hysteresis in the output characteristics of Fe-doped AlGaN/GaN HEMTs observed at low drain bias. Unintentionally doped background carbon can make the GaN buffer p-type allowing it to electrically float. We further note that reverse bias trap-assisted leakage across the junction between the 2DEG and the p-type buffer can provide a mechanism for hole injection and buffer discharging at just a few volts above the knee, explaining the "kink" bias dependence and hysteresis. We show that HEMTs with a different background carbon have dramatically different kink behaviors consistent with the model. Positive and negative magnitude drain current transient signals with 0.9-eV activation energy are seen, corresponding to changes in the occupation of carbon acceptors located in different regions of the GaN buffer. The observation of such signals from a single trap calls into question conventional interpretations of these transients based on the bulk 1-D deep-level transient spectroscopy (DLTS) models for GaN devices with floating regions.

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Experimental and numerical correlation between current-collapse and fe-doping profiles in GaN HEMTs

Cited by 17 publications

References 4 publications

Effects of buffer compensation strategies on the electrical performance and RF reliability of AlGaN/GaN HEMTs

Effects of buffer compensation strategies on the electrical performance and RF reliability of AlGaN/GaN HEMTs

GaN-based power devices: Physics, reliability, and perspectives

“Kink” in AlGaN/GaN-HEMTs: Floating Buffer Model

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