Excitonic Giant Zeeman Effect in Wide Gap Diluted Magnetic Semiconductors Based on ZnO and GaN

Pacuski, W.; Ferrand, D.; Kossacki, P.; Marcet, S.; Cibert, J.; Gaj, J. A.; Golnik, A.

doi:10.12693/aphyspola.110.303

Cited by 7 publications

(5 citation statements)

References 9 publications

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“… 106 This was also found to show a large Zeeman effect. 107,108 In both these cases, there was a sub band gap in the energy level due to this LMCT. Beside this sub band gap, unique midgap excited states have been found by Joseph W. May in cobalt-doped ZnO QDs.…”

Section: Doped Zno Qdsmentioning

confidence: 95%

Journey of ZnO quantum dots from undoped to rare-earth and transition metal-doped and their applications

Singh

2021

RSC Adv.

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Section: Doped Zno Qdsmentioning

confidence: 95%

Journey of ZnO quantum dots from undoped to rare-earth and transition metal-doped and their applications

Singh

2021

RSC Adv.

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“…The previous description must be altered in many occasions: in semiconductors with wurtzite structure, when the exciton binding energy is large, in the case of a strong [55] p-d exchange, in the case of magnetic impurities with a non-zero orbital momentum. We will only briefly address these issues.…”

Section: Deviations From the Simple Modelmentioning

confidence: 99%

Diluted Magnetic Semiconductors: Basic Physics and Optical Properties

Cibert

Scalbert

2008

Springer Series in Solid-State Sciences

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Diluted Magnetic Semiconductors (DMS) form a new class of magnetic materials, which fill the gap between ferromagnets and semiconductors [1]. In the early literature these DMS were often named semimagnetic semiconductors, because they are midway between nonmagnetic and magnetic materials. DMS are semiconductor compounds (A 1−x M x B) in which a fraction x of the cations is substituted by magnetic impurities, thereby introducing magnetic properties into the host semiconductor AB. This makes a great difference with semiconducting ferromagnets, i.e., ferromagnetic materials exhibiting semiconductor-like transport properties, which have been known for some time (see a review in [2]). A DMS is expected to retain most of its classical semiconducting properties, and to offer the opportunity of a full integration into heterostructures, including heterostructures with the host material. The great challenge and ultimate goal of the research in this field is to obtain DMS ferromagnetic at room temperature, which can be integrated in semiconductor heterostructures for electronic or optoelectronic applications. This is one of the key issues for the advent of spintronics devices.Among the principal DMS families, II-VI and, to a less extent, III-V based DMS, with Mn as the magnetic impurity, are best understood. For this reason the present chapter will be mainly based on these compounds to introduce the wellestablished basic physics of DMS. More details can be found in review papers such as [3][4][5]. Some issues related to work in progress, generally on novel materials, will be also discussed but only briefly.

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“…For σ + we use the following basis: |s ↓ p + ↑ and |s ↑ p + ↓ (which are identically active in σ + polarization and will give the main contribution to excitons A and B), and |s ↑ p z ↑ (which is optically inactive since it is spin-forbidden, but will give the main contribution to exciton C in σ polarization). In this basis the Hamiltonians are written: 17,19,20 …”

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Excitonic giant Zeeman effect inGaN:Mn3+

et al. 2007

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We describe a direct observation of the excitonic giant Zeeman splitting in Ga1-xMnxN, a widegap III-V diluted magnetic semiconductor. Reflectivity and absorption spectra measured at low temperatures display the A and B excitons, with a shift under magnetic field due to s,p-d exchange interactions. Using an excitonic model, we determine the difference of exchange integrals between Mn 3+ and free carriers in GaN, N0(α − β) = −1.2 ± 0.2 eV. Assuming a reasonable value of α, this implies a positive sign of β which corresponds to a rarely observed ferromagnetic interaction between the magnetic ions and the holes.PACS numbers: 75.50. Pp, 75.30.Hx, 78.20.Ls, 71.35.Ji Diluted magnetic semiconductors (DMS) of the III-V type, such as (Ga,Mn)As, attract attention mainly because of their magnetic and electron transport properties. The direct measurement of the strength of the ion-carrier coupling, as routinely performed in II-VI DMS, through the observation of the giant Zeeman splitting of excitons, was not accessible for III-V DMS due to free carriers introduced by magnetic ions. Hence conclusions have been based on studies of extremely diluted samples 1 or on a complex interpretation of experimental data. 2,3,4Here we show and quantitatively describe excitons in GaN, with a shift due to the s,p-d coupling to Mn ions incorporated as neutral centers (Mn 3+ ). We present both the magneto-optical study of specially designed and thoroughly characterized Ga 1−x Mn x N layers, and the excitonic model needed to determine the strength of ioncarrier coupling. Such a model is needed, because excitonic effects are especially strong in wide-gap semiconductors. Hence the giant Zeeman effect measured on the excitons cannot be identified with that of band-to-band transitions, as it has been done for other wurtzite DMS. 5

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Excitonic Giant Zeeman Effect in Wide Gap Diluted Magnetic Semiconductors Based on ZnO and GaN

Cited by 7 publications

References 9 publications

Journey of ZnO quantum dots from undoped to rare-earth and transition metal-doped and their applications

Journey of ZnO quantum dots from undoped to rare-earth and transition metal-doped and their applications

Diluted Magnetic Semiconductors: Basic Physics and Optical Properties

Excitonic giant Zeeman effect inGaN:Mn3+

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