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We report the first observation of oscillations of the electromagnetic field in an optical superlattice based on porous silicon. These oscillations are an optical equivalent of well-known electronic Bloch oscillations in crystals. Elementary cells of our structure are composed by microcavities whose coupling gives rise to the extended collective modes forming optical minigaps and minibands. By varying thicknesses of the cavities along the structure axis, we have created an effective electric field for photons. A very high quality factor of the confined optical state of the Wannier-Stark ladder may allow lasing in porous silicon-based superlattices.

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Time-resolved Kerr rotation experiments show that two kinds of spin modes exist in diluted magnetic semiconductor quantum wells: ͑i͒ strongly coupled electron-magnetic ion spin excitations and ͑ii͒ excitations of magnetic ion spin subsystem decoupled from electron spins. The coexistence of these two kinds of spin precession modes cannot be understood in terms of average spins but requires a description, which goes beyond the mean-field approximation.

We exploit the potential of the spin noise spectroscopy (SNS) for studies of nuclear spin dynamics in n-GaAs. The SNS experiments were performed on bulk n-type GaAs layers embedded into a high-finesse microcavity at negative detuning. In our experiments, nuclear spin polarisation initially prepared by optical pumping is monitored in real time via a shift of the peak position in the electron spin noise spectrum. We demonstrate that this shift is a direct measure of the Overhauser field acting on the electron spin. The dynamics of nuclear spin is shown to be strongly dependent on the electron concentration.

We report on the nondestructive measurement of nuclear magnetization in n-GaAs via cavity enhanced Faraday rotation. In contrast with the existing optical methods, this detection scheme does not require the presence of detrimental out-of-equilibrium electrons. Specific mechanisms of the Faraday rotation are identified for (i) nuclear spins situated within the localized electron orbits, these spins are characterized by fast dynamics, (ii) all other nuclear spins in the sample characterized by much slower dynamics. Our results suggest that even in degenerate semiconductors nuclear spin relaxation is limited by the presence of localized electron states and spin diffusion, rather than by Korringa mechanism.