Exciton-Related Photoluminescence and Lasing in CdS Nanobelts

Liu, B.; Chen, R.; Xu, Xiaojing; Li, D. H.; Zhao, Yang; Shen, Zexiang; Xiong, Qihua; Sun, Handong

doi:10.1021/jp203551f

Cited by 83 publications

(83 citation statements)

References 28 publications

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“…4(a). The fitting parameters were determined to be E g (0) = 2.3 eV, ˛ = 4.5 × 10 −4 eV/K, and ˇ = 285 K, respectively, very close to the reported results obtained for CdS nanobelts [32]. These results well explained the occurrence of the ' '-shape shift of G band.…”

Section: Resultssupporting

confidence: 84%

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Temperature-dependent photoluminescence and mechanism of CdS thin film grown on Si nanoporous pillar array

Yan

et al. 2015

Applied Surface Science

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Section: Resultssupporting

confidence: 84%

“…This red-shift is usually understood as the narrowing of CdS bandgap caused by the temperature enhancement of lattice distortion or electron-phonon interaction. Theoretically, the temperature evolution of the bandgap for a semiconductor can usually be described by the Varshni relation [32]:…”

Section: Resultsmentioning

confidence: 99%

Temperature-dependent photoluminescence and mechanism of CdS thin film grown on Si nanoporous pillar array

Yan

et al. 2015

Applied Surface Science

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“…Nanowires with small diameter or belt-like nanostructures with well-defined geometry can not form the WGM micro-cavity. 23,33 Figure 5(c) is bright field optical image of a single pure CdS nanobelt. Figure 5(d) is corresponding far-field power dependent PL spectra, which only contain a sharp emission band at 505 nm.…”

Section: Resultsmentioning

confidence: 99%

Broad spectral response photodetector based on individual tin-doped CdS nanowire

et al. 2014

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High purity and tin-doped 1D CdS micro/nano-structures were synthesized by a convenient thermal evaporation method. SEM, EDS, XRD and TEM were used to examine the morphology, composition, phase structure and crystallinity of as-prepared samples. Raman spectrum was used to confirm tin doped into CdS effectively. The effect of impurity on the photoresponse properties of photodetectors made from these as-prepared pure and tin-doped CdS micro/nano-structures under excitation of light with different wavelength was investigated. Various photoconductive parameters such as responsivity, external quantum efficiency, response time and stability were analyzed to evaluate the advantage of doped nanowires and the feasibility for photodetector application. Comparison with pure CdS nanobelt, the tin-doped CdS nanowires response to broader spectral range while keep the excellect photoconductive parameters. Both trapped state induced by tin impurity and optical whispering gallery mode microcavity effect in the doped CdS nanowires contribute to the broader spectral response. The micro-photoluminescence was used to confirm the whispering gallery mode effect and deep trapped state in the doped CdS nanowires.

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“…Due to their excellent optical properties and visible band gap, CdS nanostructures are not only considered to be promising candidates for electrical and optoelectronic applications, such as fieldeffect transistors, waveguides, lasers, solar cells, and field emitters, but are also considered to offer adequate platforms for fundamental research [22][23][24][25][26]. The nanobelt morphology of CdS caused it to recently be identified as a novel choice of semiconductors for laser cooling applications, as it shows considerable promise for use in all solid-state optical refrigeration techniques [25,27,28].…”

Section: Nano Resmentioning

confidence: 99%

Strain-induced spatially indirect exciton recombination in zinc-blende/wurtzite CdS heterostructures

Liu

Mata

et al. 2015

Nano Res.

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Strain engineering provides an effective mean of tuning the fundamental properties of semiconductors for electric and optoelectronic applications. Here we report on how the applied strain changes the emission properties of heterostructures consisting of different crystalline phases in the same CdS nanobelts. The strained portion was found to produce an additional emission peak on the low-energy side that was blueshifted with increasing strain. Furthermore, the additional emission peak obeyed the Varshni equation with temperature and exhibited the band-filling effect at high excitation power. This new emission peak may be attributed to spatially indirect exciton recombination between different crystalline phases of CdS. First-principles calculations were performed based on the spatially indirect exciton recombination, and the calculated and experimental results agreed with one another. Strain proved to be capable of enhancing the anti-Stokes emission, suggesting that the efficiency of laser cooling may be improved by strain engineering.

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Exciton-Related Photoluminescence and Lasing in CdS Nanobelts

Cited by 83 publications

References 28 publications

Temperature-dependent photoluminescence and mechanism of CdS thin film grown on Si nanoporous pillar array

Temperature-dependent photoluminescence and mechanism of CdS thin film grown on Si nanoporous pillar array

Broad spectral response photodetector based on individual tin-doped CdS nanowire

Strain-induced spatially indirect exciton recombination in zinc-blende/wurtzite CdS heterostructures

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