The p–n diodes represent the most fundamental device building blocks for diverse optoelectronic functions, but are difficult to achieve in atomically thin transition metal dichalcogenides (TMDs) due to the challenges in selectively doping them into p- or n-type semiconductors. Here, we demonstrate that an atomically thin and sharp heterojunction p–n diode can be created by vertically stacking p-type monolayer tungsten diselenide (WSe2) and n-type few-layer molybdenum disulfide (MoS2). Electrical measurements of the vertically staked WSe2/MoS2 heterojunctions reveal excellent current rectification behavior with an ideality factor of 1.2. Photocurrent mapping shows rapid photoresponse over the entire overlapping region with a highest external quantum efficiency up to 12%. Electroluminescence studies show prominent band edge excitonic emission and strikingly enhanced hot-electron luminescence. A systematic investigation shows distinct layer-number dependent emission characteristics and reveals important insight about the origin of hot-electron luminescence and the nature of electron–orbital interaction in TMDs. We believe that these atomically thin heterojunction p–n diodes represent an interesting system for probing the fundamental electro-optical properties in TMDs and can open up a new pathway to novel optoelectronic devices such as atomically thin photodetectors, photovoltaics, as well as spin- and valley-polarized light emitting diodes, on-chip lasers.

Two-dimensional layered semiconductors such as molybdenum disulfide (MoS2) have attracted tremendous interest as a new class of electronic materials. However, there are considerable challenges in making reliable contacts to these atomically thin materials. Here we present a new strategy by using graphene as the back electrodes to achieve ohmic contact to MoS2. With a finite density of states, the Fermi level of graphene can be readily tuned by a gate potential to enable a nearly perfect band alignment with MoS2. We demonstrate for the first time a transparent contact to MoS2 with zero contact barrier and linear output behavior at cryogenic temperatures (down to 1.9 K) for both monolayer and multilayer MoS2. Benefiting from the barrier-free transparent contacts, we show that a metal-insulator transition can be observed in a two-terminal MoS2 device, a phenomenon that could be easily masked by Schottky barriers found in conventional metal-contacted MoS2 devices. With further passivation by boron nitride (BN) encapsulation, we demonstrate a record-high extrinsic (two-terminal) field effect mobility up to 1300 cm(2)/(V s) in MoS2 at low temperature.

Optical irradiation accompanied by spontaneous anti-Stokes emission can lead to cooling of matter, in a phenomenon known as laser cooling, or optical refrigeration, which was proposed by Pringsheim in 1929. In gaseous matter, an extremely low temperature can be obtained in diluted atomic gases by Doppler cooling, and laser cooling of ultradense gas has been demonstrated by collisional redistribution of radiation. In solid-state materials, laser cooling is achieved by the annihilation of phonons, which are quanta of lattice vibrations, during anti-Stokes luminescence. Since the first experimental demonstration in glasses doped with rare-earth metals, considerable progress has been made, particularly in ytterbium-doped glasses or crystals: recently a record was set of cooling to about 110 kelvin from the ambient temperature, surpassing the thermoelectric Peltier cooler. It would be interesting to realize laser cooling in semiconductors, in which excitonic resonances dominate, rather than in systems doped with rare-earth metals, where atomic resonances dominate. However, so far no net cooling in semiconductors has been achieved despite much experimental and theoretical work, mainly on group-III-V gallium arsenide quantum wells. Here we report a net cooling by about 40 kelvin in a semiconductor using group-II-VI cadmium sulphide nanoribbons, or nanobelts, starting from 290 kelvin. We use a pump laser with a wavelength of 514 nanometres, and obtain an estimated cooling efficiency of about 1.3 per cent and an estimated cooling power of 180 microwatts. At 100 kelvin, 532-nm pumping leads to a net cooling of about 15 kelvin with a cooling efficiency of about 2.0 per cent. We attribute the net laser cooling in cadmium sulphide nanobelts to strong coupling between excitons and longitudinal optical phonons (LOPs), which allows the resonant annihilation of multiple LOPs in luminescence up-conversion processes, high external quantum efficiency and negligible background absorption. Our findings suggest that, alternatively, group-II-VI semiconductors with strong exciton-LOP coupling could be harnessed to achieve laser cooling and open the way to optical refrigeration based on semiconductors.

Filterless narrowband photodetectors can realize color discrimination without filter or bulk spectrometer, thus greatly reducing the system volume and cost for many imaging applications. Charge collection narrowing has been demonstrated to be a successful approach to achieve filterless narrowband photodetections; nevertheless, it sacrifices the sensitivity of the photodetectors. Here we show a highly tunable narrowband photodetector based on two-dimensional perovskite single crystals with high external quantum efficiency (200%), ultralow dark current (10−12 A), and high on–off ratio (103). The spectral response of the narrowband photodetectors can be continuously tuned from red to blue with all full-width at half-maximum < 60 nm and especially < 20 nm in blue wavelength range. The excellent performance can be ascribed to self-trapped states within bandgap and extremely low electrical conductivity in the out-of-plane direction. Our findings open the exciting potential of 2D perovskites for next-generation optoelectronics.

Scalable growth of regular arrays of perovskite microplates opens a new platform for electronic and optoelectronic device arrays.

Public attention to the food scandals raises an urgent need to develop effective and reliable methods to detect food contaminants. The current prevailing detections are primarily based upon liquid chromatography, mass spectroscopy, or colorimetric methods, which usually require sophisticated and time-consuming steps or sample preparation. Herein, we develop a facile strategy to assemble the vertically aligned monolayer of Au nanorods with a nominal 0.8 nm gap distance and demonstrate their applications in the rapid detection of plasticizers and melamine contamination at femtomolar level by surface-enhanced Raman scattering spectroscopy (SERS). The SERS signals of plasticizers are sensitive down to 0.9 fM concentrations in orange juices. It is the lowest detection limit reported to date, which is 7 orders of magnitude lower than the standard of United States (6 ppb). The highly organized vertical arrays generate the reproducible "SERS-active sites" and can be achieved on arbitrary substrates, ranging from silicon, gallium nitride, glass to flexible poly(ethylene naphthalate) substrates.

The recently emerged organohalide perovskites (e.g., CH3NH3PbI3) have drawn intense attention for high efficiency solar cells. However, with a considerable solubility in many solvents, these perovskites are not typically compatible with conventional lithography processes for more complicated device fabrications that are important for both fundamental studies and technological applications. Here, we report the creation of novel heterojunction devices based on perovskites and two-dimensional (2D) crystals by taking advantage of the layered characteristic of lead iodide (PbI2) and vapor-phase intercalation. We show that a graphene/perovskite/graphene vertical stack can deliver a highest photoresponsivity of ∼950 A/W and photoconductive gain of ∼2200, and a graphene/WSe2/perovskite/graphene heterojunction can display a high on/off ratio (∼10(6)) transistor behavior with distinct gate-tunable diode characteristics and open-circuit voltages. Such unique perovskite-2D heterostructures have significant potential for future optoelectronic research and can enable broad possibilities with compositional tunability of organohalide perovskites and the versatility offered by diverse 2D materials.

Flexible electronic and photonic devices have been demonstrated in the past decade, with significant promise in low-cost, light-weighted, transparent, biocompatible, and portable devices for a wide range of applications. Herein, we demonstrate a flexible metamaterial (Metaflex)-based photonic device operating in the visible-IR regime, which shows potential applications in high sensitivity strain, biological and chemical sensing. The metamaterial structure, consisting of split ring resonators (SRRs) of 30 nm thick Au or Ag, has been fabricated on poly(ethylene naphthalate) substrates with the least line width of ∼30 nm by electron beam lithography. The absorption resonances can be tuned from middle IR to visible range. The Ag U-shaped SRRs metamaterials exhibit an electric resonance of ∼542 nm and a magnetic resonance of ∼756 nm. Both the electric and magnetic resonance modes show highly sensitive responses to out-of-plane bending strain, surrounding dielectric media, and surface chemical environment. Due to the electric and magnetic field coupling, the magnetic response gives a sensitivity as high as 436 nm/RIU. Our Metaflex devices show superior responses with a shift of magnetic resonance of 4.5 nm/nM for nonspecific bovine serum albumin protein binding and 65 nm for a self-assembled monolayer of 2-naphthalenethiol, respectively, suggesting considerable promise in flexible and transparent photonic devices for chemical and biological sensing.