CsPbX3 perovskites have attracted tremendous attention recently due to their excellent optical properties and potential applications. However, this seemingly counterintuitive fact that CsPbX3 perovskites can act as both extraordinary photovoltaic materials and superior emission mediums has not yet been well understood. In this work, the absorption spectrum, temperature-dependent Raman spectra, temperature- and excitation power-dependent steady-state micro-photoluminescence along with the temperature-dependent emission lifetime dynamics were used to characterize systematically the luminescence processes of solution-grown CsPbBr3 micro/nanowires with weak confinement. A dominative in situ triplet exciton emission at 527 nm with strong exciton–phonon coupling and a series of end-facet cavity-related emission bands in the range of 535–580 nm due to robust exciton–photon coupling were observed simultaneously in individual nanowires. The in situ triplet exciton luminescence shows an abnormal blue shift with increasing temperature, while the end-facet emission bands exhibit a red shift. The exciton binding energy and exciton–phonon coupling energy were extracted to be 57 and 66 meV, respectively, confirming the strong exciton–phonon coupling. Our results could provide new insight into the long-standing issue of intrinsic excitonic properties as well as the photophysical process and exciton–phonon/exciton–photon coupling in CsPbBr3 micro/nanostructures, which are critical and helpful to the development of high-performance optoelectronic devices.

Tungsten trioxide (WO3) is always oxygen-deficient or non-stoichiometric under atmospheric conditions. Positively charged oxygen vacancies prefer to drift as well as electrons when the electric field is strong enough, which will alter the distribution of oxygen vacancies and then endow WO3 with memristive properties. In Au/WO3 nanowire/Au sandwich structures with two ohmic contacts, the axial distribution of oxygen vacancies and then the electrical transport properties can be more easily modulated by bias voltage. The threshold electric field for oxygen vacancy drifting in single-crystal hexagonal WO3 nanowire is about 106 V/m, one order of magnitude less than that in its granular film. At elevated temperatures, the oxygen vacancy drifts and then the memristive effect can be enhanced remarkably. When the two metallic contacts are asymmetric, the WO3 nanowire devices even demonstrate good rectifying characteristic at elevated temperatures. Based on the drift of oxygen vacancies, nanoelectronic devices such as memristor, rectifier, and two-terminal resistive random access memory can be fabricated on individual WO3 nanowires.

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High purity and tin-doped 1D CdS micro/nano-structures were synthesized by a convenient thermal evaporation method. SEM, EDS, XRD and TEM were used to examine the morphology, composition, phase structure and crystallinity of as-prepared samples. Raman spectrum was used to confirm tin doped into CdS effectively. The effect of impurity on the photoresponse properties of photodetectors made from these as-prepared pure and tin-doped CdS micro/nano-structures under excitation of light with different wavelength was investigated. Various photoconductive parameters such as responsivity, external quantum efficiency, response time and stability were analyzed to evaluate the advantage of doped nanowires and the feasibility for photodetector application. Comparison with pure CdS nanobelt, the tin-doped CdS nanowires response to broader spectral range while keep the excellect photoconductive parameters. Both trapped state induced by tin impurity and optical whispering gallery mode microcavity effect in the doped CdS nanowires contribute to the broader spectral response. The micro-photoluminescence was used to confirm the whispering gallery mode effect and deep trapped state in the doped CdS nanowires.

The optical confinement and strong carrier coupling within a semiconductor nanostructure cavity are crucial for the modulation of emission properties. Fundamental understanding of the light-matter interaction in a low dimensional system is important. In this paper, we synthesized high-quality hexagonal Te-doped CdS nanowires by two-step chemical vapor deposition and investigated systematically the doping concentration, temperature, excitation power, excitation wavelength dependent Raman, photoluminescence and carrier lifetime decay. Scanning electron microscopy, energy dispersive x-ray spectrometry and x-ray diffraction confirmed Te-doping in the as-prepared samples. The strong surface optical (SO) phonon mode is observed in the micro-Raman spectra of an individual Te-CdS nanowire, which is unsuitable in large-sized structures. In situ micro-photoluminescence (μ-PL) characterization shows dominant confined defect state emission with whispering gallery mode (WGM) characteristics. The emission peak position shifts under increased excitation power, demonstrating the inelastic scattering by bound carriers. In addition, the short wavelength emission modes are dominant at a low temperature (80 K) while the long wavelength emission modes are dominant at a high temperature (300 K) due to different recombination processes contributing to the WGM resonant bands, which was also confirmed by the time-resolved PL measurement. All these results reflect strong coupling between the surface evanescent-wave in the WGM cavity and the SO phonon/polaron, which will facilitate the rational tailoring of surface/interface relevant properties for nanophotonic device applications.

In a two-terminal Au/hexagonal WO3 nanowire/Au device, ions drifting or carriers self-trapping under external electrical field will modulate the Schottky barriers between the nanowire and electrodes, and then result in memristive effect. When there are water molecules adsorbed on the surface of WO3 nanowire, hydrogen ions will generate near the positively-charged electrode and transport in the condensed water film, which will enhance the memristive performance characterized by analogic resistive switching remarkably. When the bias voltage is swept repeatedly under high relative humidity level, hydrogen ions will accumulate on the surface and then implant into the lattice of the WO3 nanowire, which leads to a transition from semiconducting WO3 nanowire to metallic HxWO3 nanowire. This insulator-metal transition can be realized more easily after enough electron-hole pairs being excited by laser illumination. The concentration of hydrogen ions in HxWO3 nanowire will decrease when the device is exposed to oxygen atmosphere or the bias voltage is swept in atmosphere with low relative humidity. By modulating the concentration of hydrogen ions, conductive hydrogen tungsten bronze filament might form or rupture near electrodes when the polarity of applied voltage changes, which will endow the device with memristive performance characterized by digital resistive switching.

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Optoelectronic diode based on PN heterostructure is one of the most fundamental device building blocks with extensive applications. Here we reported the fabrication and optoelectronic properties of GaTe/Sn : CdS nanoflake/nanowire PN heterojunction photodetectors. With high quality contacts between metal electrodes and Sn : CdS or GaTe, the electrical measurement of GaTe/Sn : CdS hybrid heterojunction under dark condition demonstrates an excellent diode characteristic with well-defined current rectification behavior. The photocurrent increases drastically under LED white light as well as red, green, UV illumination. The on-off ratio of current is about 100 for forward bias and 3000 for reverse bias, which clearly indicates the ultrahigh sensitivity of the heterostructure photodetector to white light. The responsivity and optical gain are determined to be 607 A W(-1) and (1.06-2.16) × 10(5)%, which is higher than previous reports of single GaTe or CdS nanostructures. Combination the Ids-Vds curves under different illumination power with energy band diagrams, we assign that both the light modulation effect under forward and reverse bias and the surface molecular oxygen adsorption/desorption mechanism are dominant to the electrical transport behavior of GaTe/Sn : CdS heterojunction. This heterostructure photodetector also shows good stability and fast response speed. Both the high photosensibility and fast response time described in the present study suggest strongly that the GaTe/Sn : CdS hybrid heterostructure is a promising candidate for photodetection, optical sensing and switching devices.