Excitation-Photon-Energy Selectivity of Photoconversions in Halogen-Bridged Pd-Chain Compounds: Mott Insulator to Metal or Charge-Density-Wave State

Matsuzaki, Hiroyuki; Iwata, Masao; Miyamoto, T.; Terashige, T.; Iwano, Kaoru; Takaishi, Shinya; Takamura, Miho; Kumagai, Shohei; Yamashita, Masahiro; Takahashi, Rohta; Wakabayashi, Yusuke; Okamoto, Hiroshi

doi:10.1103/physrevlett.113.096403

Cited by 38 publications

(33 citation statements)

References 39 publications

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“…Quasi one-and two-dimensional cuprate oxides 7,10,11,[15][16][17][18][19] , halogen-bridged complexes 8,12 and BEDT-TTF molecular solids 13,14 are the examples. This is attributed to a rich variety of equilibrium states and the simple lattice structures.…”

Section: Introductionmentioning

confidence: 99%

Photoinduced correlated electron dynamics in a two-leg ladder Hubbard system

Hashimoto

Ishihara

2016

Phys. Rev. B

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Photoinduced carrier dynamics in a correlated electron system on a coupled two-leg ladder lattice are studied. The two-leg ladder Hubbard model is analyzed by utilizing the exact diagonalization method based on the Lanczos algorithm in finite size clusters. In order to reveal the transient carrier dynamics after photoirradiation, we calculate the low-energy components of the hole kinetic energy, the pair-field correlation function, the optical conductivity spectra and others. It is shown that the photoinduced metallic-like state appears in a half filled Mott insulating state, while the low-energy carrier motion is suppressed by photoirradiation in hole doped metallic states. These photoinduced changes in electron dynamics are associated with changes in the carrier-pair coherence, and are not attributed to a naive thermalization but to a ladder-lattice effect. Based on the numerical results, optical controls of hole pairs by using the double-pulse pumping are demonstrated. Implications to the recent optical pump-probe experiments are presented.

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Section: Introductionmentioning

confidence: 99%

Photoinduced correlated electron dynamics in a two-leg ladder Hubbard system

Hashimoto

Ishihara

2016

Phys. Rev. B

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“…Among many time-resolved spectroscopies, pump-probe optical measurements have been performed extensively to investigate strongly correlated electron systems. Pumping pulse applied to one-dimensional (1D) Mott insulators with spin-density-wave (SDW) correlation creates not only photoinduced metallic state 1,2 but also a photoinduced charge-density-wave (CDW) state 3 . In two dimensions, the photoexcitation of underdoped cuprates induces a signature of enhanced superconductivity [4][5][6] .…”

Section: Introductionmentioning

confidence: 99%

Photoinduced in-gap excitations in the one-dimensional extended Hubbard model

Shao

Bonča

et al. 2015

Phys. Rev. B

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We investigate time evolution of optical conductivity in the half-filled one-dimensional extended Hubbard model driven by a transient laser pulse, by using the time-dependent Lanczos method. Photoinduced in-gap excitations exhibit qualitatively different structure in the spin-density wave (SDW) in comparison to the charge-density wave (CDW) phase. In the SDW, the origin of a lowenergy in-gap excitation is attributed to even-odd parity of photoexcited states, while in the CDW an in-gap state is due to confined photo-generated carriers. The signature of the in-gap excitations can be identified as a characteristic oscillation in the time evolution of physical quantities.

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“…As Mott memory exhibits a fast switching speed and ultra-low power consumption, the possible applications of Mott memory include smart cards, ID cards, and other embedded memory applications such as railway passes, automobile equipment, and domestic electronic appliances. However, the retention of Mott memory still remains questionable because disorders, defects, and spatial variation of chemical composition may have a remarkable impact on the Mott transition [44][45][46]. For instance, the Mott transition can be driven even by a small amount of carrier doping to the integer-filling or half-filling valence states of transition element.…”

Section: Mott Memorymentioning

confidence: 99%

Emerging Nonvolatile Memories to Go Beyond Scaling Limits of Conventional CMOS Nanodevices

Wang

Yang

Wen

et al. 2014

Journal of Nanomaterials

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Continuous dimensional scaling of the CMOS technology, along with its cost reduction, has rendered Flash memory as one of the most promising nonvolatile memory candidates during the last decade. With the Flash memory technology inevitably approaching its fundamental limits, more advanced storage nanodevices, which can probably overcome the scaling limits of Flash memory, are being explored, bringing about a series of new paradigms such as FeRAM, MRAM, PCRAM, and ReRAM. These devices have indeed exhibited better scaling capability than Flash memory while also facing their respective physical drawbacks. The consequent tradeoffs therefore drive the information storage device technology towards further advancement; as a result, new types of nonvolatile memories, including carbon memory, Mott memory, macromolecular memory, and molecular memory have been proposed. In this paper, the nanomaterials used for these four emerging types of memories and the physical principles behind the writing and reading methods in each case are discussed, along with their respective merits and drawbacks when compared with conventional nonvolatile memories. The potential applications of each technology are also briefly assessed.

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Excitation-Photon-Energy Selectivity of Photoconversions in Halogen-Bridged Pd-Chain Compounds: Mott Insulator to Metal or Charge-Density-Wave State

Cited by 38 publications

References 39 publications

Photoinduced correlated electron dynamics in a two-leg ladder Hubbard system

Photoinduced correlated electron dynamics in a two-leg ladder Hubbard system

Photoinduced in-gap excitations in the one-dimensional extended Hubbard model

Emerging Nonvolatile Memories to Go Beyond Scaling Limits of Conventional CMOS Nanodevices

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