Excitation paths in RE-doped III–V semiconductors

Energy transfer in the photoexcitation of Sm3+-implanted TiO2 thin films

“…seem to be inapplicable in the photoexcitation of the material studied in this work. As the possibility of the bound exciton formation in the material has been demonstrated, we propose that an Auger-type process is involved in Sm 3+ excitation analogously to [30]. This also explains the temperature dependence of Sm 3+ emission (Fig.…”

“…InP:Yb 3+ 3+, SiO 2 :Er 3+ , Si:Er 3+ ) the energy transfer involves the trapping of an electron-hole pair at a RE-related defect level, where they form a bound excitonic state. The latter, in turn, recombines non-radiatively, leading to the excitation of the RE ion in an Auger-type process [29][30][31][32][33]. Furthermore, it has been suggested that this type of energy transfer should be applicable to other RE-doped solids as well.…”

1.54 μ m emitters based on erbium doped InGaN p-i-n junctions

“…Previous studies have been concentrated on Er doped III-nitride samples produced either by ion implantation or by in situ doping using molecular beam epitaxy ͑MBE͒. [10][11][12][13][14][15][16][17][18] Compared to ion implantation, in situ doping provides precise control of Er concentration and dopant position in the thin film. Electroluminescent devices have been fabricated from MBE grown materials and shown to emit at visible and IR wavelengths.…”

Current-injected 1.54μm light emitting diodes based on erbium-doped GaN

“…[3][4][5][6][7][8][9][10][11][12] GaN and AlGaN epilayers doped with Er ions have demonstrated a highly reduced thermal quenching of the Er luminescence intensity from cryogenic to elevated temperatures, as compared to other semiconductor host materials such as Si and GaAs. Previous work has been concentrated on the optical property studies of Er dopants with samples doped either by ion implantation or by in situ doping using molecular beam epitaxy ͑MBE͒ growth technique.…”