1.54   μ m emitters based on erbium doped InGaN p-i-n junctions

Abstract

We present here on the growth, fabrication and electroluminescence ͑EL͒ characteristics of light emitting diodes ͑LEDs͒ based on Er-doped InGaN active layers. The p-in structures were grown using metal organic chemical vapor deposition and processed into 300ϫ 300 m 2 mesa devices. The LEDs exhibit strong emissions at 1.0 and 1.54 m, due to Er intra-4f transitions, under forward bias conditions. The emitted EL intensity increases with applied input current without exhibiting saturation up to 70 mA. The integrated power over the near infrared emission, measured at room temperature from the top of a bare chip, is about 2 W. The results represent a significant advance in the development of current injected, chip-scale emitters and waveguide amplifiers based on Er doped semiconductors.

Current status for light-emitting diode with Eu-doped GaN active layer grown by MBE

“…6(b). The red EL was observed even at the forward bias higher than 5 V. This situation is similar to the OMVPE grown LEDs [16,22]. Under such high forward bias, question arises, of whether the emission by the electron-hole injection is enabled, because the GaN:(Eu, Mg) active layer's high resistance and high electric field may apply in the active layer.…”

“…Although the EL intensity under the forward bias conditions was five to 10 times more intense than reverse bias condition, the excitation mechanism under forward bias was not fully understood. Dahal et al reported the electroluminescence from Er doped InGaN p-i-n structure under the forward bias condition [16]. However, their device required forward-bias of about 12.5 V to obtain 20 mA current injection.…”

Eu3+ luminescence properties of Eu- and Mg-codoped AlGaN

“…RGB-color-integrated RE-doped GaN thin film electroluminescence (EL) devices, and light-emitting high electron-mobility transistors (HEMTs) with spatially selective Eu doping region have been fabricated [10,11]. Light-emitting diodes (LEDs) with Eu doped GaN (GaN:Eu) and Er doped InGaN active layers showing red and infrared emission have been demonstrated [12][13][14]. For further development of device performance, a fundamental technology for optically activating RE ions in a crystal is required.…”

Emission enhancement mechanism of GaN:Eu by Mg codoping

“…10,11 Recently, red and infrared emissions from light-emitting diodes (LEDs) with Eu-doped GaN (GaN:Eu) and Er-doped InGaN active layers have been realized under current injection. 12,13 Several emission peaks have been observed in GaN:Eu around 620 nm corresponding to the 5 D 0 -7 F 2 transition, which suggests the existence of several different optical sites. [14][15][16][17][18][19][20] At least nine different optical sites revealed by combined excitation-emission spectroscopy (CEES) by Fleischman et al 15 The luminous efficiency and excitation efficiency strongly depend on the optical site and not all the Eu ions contribute to the luminescence.…”