Eu3+ luminescence properties of Eu- and Mg-codoped AlGaN

Kanemoto, Masayoshi; Sekiguchi, Hiroto; Yamane, Keisuke; Okada, Hiroshi; Wakahara, Akihiro

doi:10.1016/j.jlumin.2015.04.036

Cited by 8 publications

(4 citation statements)

References 28 publications

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“…A similar PL peak was observed in GaN:Eu, , with a similar temperature behavior attributed to a possible selective population of Eu 3+ -related complex with increasing temperature . A peak at 617.6 nm was also recorded with enhanced intensity in Al 0.11 Ga 0.89 N:Eu, with respect to GaN:Eu, using above bandgap excitation . In this work, the obtained peculiar temperature behavior of the P1 peak intensity allows to define two regions I and II for temperatures below 120 K and above 120 K, respectively.…”

Section: Resultssupporting

confidence: 74%

“…O’Donnell have demonstrated this principle by showing that the T 1/2 value (corresponding to the temperature at which the intensity of the luminescence is one-half of its maximum low-temperature) is as high as 400 K for GaN, but this value strongly depends on the RE related center in the III–N host. Recently, a synergy effect between the increase of III–N bandgap and the codoping was explored by Kanemoto et al for Mg codoped AlGaN:Eu epitaxial films. It was found that Mg codoping in AlGaN:Eu contributes to increase the PL integrated intensity and to improve the PL efficiency.…”

mentioning

confidence: 99%

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Eu-Doped AlGaN/GaN Superlattice-Based Diode Structure for Red Lighting: Excitation Mechanisms and Active Sites

Sédrine

Rodrigues

Faye³

et al. 2018

ACS Appl. Nano Mater.

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In this work, we have established the effects of postgrowth annealing and Eu implantation, followed by annealing on an AlGaN/GaN superlattice-based diode structure, containing Mg-doped GaN top p-cap layers. The study is based on the combined information from different optical techniques, such as Raman, photoluminescence, and photoluminescence excitation. We have shown that the diode structure exhibits a stable crystalline quality even after annealing under high temperature and high pressure (HTHP) conditions (1400°C in 1 GPa N 2 ). Furthermore, we have demonstrated that the implanted Eu ions reached the first quantum wells of the diode structure and that the postimplantation thermal annealing partly removed the implantation defects, recovering some of the as-grown luminescence and optically activating the Eu 3+ in the diode structure. An in-depth study of the Eu 3+ population mechanisms was realized through room temperature photoluminescence excitation. A model was built based on the different excitation bands originated from the materials present in the diode structure, demonstrating that an energy transfer between the AlGaN/GaN superlattice excitons and the Eu 3+ ions occurs, therefore enlarging the excitation pathways for the ion's red luminescence. In addition, Eu 3+ luminescence was observed not only with above but also with below GaN bandgap excitation. The temperature dependent study of the 5 D J → 7 F J transitions allowed to tentatively provide the Eu 3+ intraionic assignments of the diode structure. We have demonstrated that at least three nonequivalent active sites are created by the Eu implantation in the diode structure: Eu1, Eu2, and Eu−Mg defect in both configurations Eu0 and Eu1(Mg).

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Section: Resultssupporting

confidence: 74%

mentioning

confidence: 99%

Eu-Doped AlGaN/GaN Superlattice-Based Diode Structure for Red Lighting: Excitation Mechanisms and Active Sites

Sédrine

Rodrigues

Faye³

et al. 2018

ACS Appl. Nano Mater.

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“…However, in future, crystalline quality improvement may be achieved by optimization of growth condition. For GaN:Eu thin layer, although it high growth temperature, V/III ratio and phase shift epitaxy by shutter sequence led to improve the optical properties, but it strongly influenced the Eu concentration . Finally, we noted the Eu concentration (2 × 10 20 cm −3 ) at which the decay time began to decrease.…”

Section: Growth Of Self‐organized Gan:eu Nanocolumnsmentioning

confidence: 73%

Self-Organized Eu-Doped GaN Nanocolumn Light-Emitting Diode Grown by RF-Molecular-Beam Epitaxy

Sukegawa

Sekiguchi

Matsuzaki

et al. 2018

Phys. Status Solidi A

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High-concentration doping of Eu ions working as luminescent centers in GaN is required to improve light output of optical devices. GaN nanocolumns can be used to achieve high crystallinity in high-concentration Eudoped GaN (GaN:Eu). In this study, optical properties of a GaN:Eu nanocolumn grown by RF-plasma-assisted molecular-beam epitaxy (RF-MBE) are investigated and GaN:Eu nanocolumn light-emitting diodes (LEDs) are demonstrated. Suppression of yellow luminescence and concentration quenching of PL intensity are observed at RT for GaN:Eu nanocolumns. When the effect of Eu concentration on optical properties is analyzed using rate equation, an increase in the Eu concentration is observed to affect 5 D 0 lifetime corresponding to back transfer, and not the effective cross-section corresponding to transfer efficiency. Based on these results, GaN:Eu nanocolumn LEDs are fabricated on an n-type (111) Si substrate. Clear rectification characteristics and sharp red luminescence are observed. The light output increases with increasing Eu concentration up to a concentration of 6 Â 10 20 cm À3 . These results suggested that GaN:Eu nanocolumns provide feasible crystal to realize novel optical devices.

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“…Literature reports that lanthanides (erbium, ytterbium and europium) are good to form composites with graphene [96] aiming the production of doped semiconductors. For instance, the GQDs doped with europium produced strong and intense emission at around 620 nm due to intra-4'-shell transitions of Eu 3+ ions [97,98]. The coordination of Eu 3+ with carboxylate groups on the surface of GQDs [99] acts as a bridge to induce the aggregation of GQD, quenching photoluminescence through energy-transfer or electron-transfer processes.…”

Section: Graphene Quantum Dots As Photoluminescent Probe With Metal Imentioning

confidence: 99%

Spectroanalytical Methods Using Graphene Quantum Dots as Photoluminescent Probes for the Determination of Analytes of Biological and Pharmacological Interest

TOLOZA¹

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Eu3+ luminescence properties of Eu- and Mg-codoped AlGaN

Cited by 8 publications

References 28 publications

Eu-Doped AlGaN/GaN Superlattice-Based Diode Structure for Red Lighting: Excitation Mechanisms and Active Sites

Eu-Doped AlGaN/GaN Superlattice-Based Diode Structure for Red Lighting: Excitation Mechanisms and Active Sites

Self-Organized Eu-Doped GaN Nanocolumn Light-Emitting Diode Grown by RF-Molecular-Beam Epitaxy

Spectroanalytical Methods Using Graphene Quantum Dots as Photoluminescent Probes for the Determination of Analytes of Biological and Pharmacological Interest

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