Excitation of Eu3+ in gallium nitride epitaxial layers: Majority versus trap defect center

Woodward, Nathaniel; Poplawsky, Jonathan D.; Mitchell, Brandon; Nishikawa, Atsushi; Fujiwara, Yoshihiro; Dierolf, Volkmar

doi:10.1063/1.3533806

Cited by 46 publications

(29 citation statements)

References 10 publications

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“…There are at least two types of major optically active Eu 3 þ sites as reported previously [23,[26][27][28][29][30][31]. One of them has the emission wavelength of 620 nm and can only be excited by the above bandgap excitation.…”

Section: Effects Of Mg Co-doping On Pl Propertiesmentioning

confidence: 83%

Current status for light-emitting diode with Eu-doped GaN active layer grown by MBE

Wakahara

Sekiguchi

Okada

et al. 2012

Journal of Luminescence

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Section: Effects Of Mg Co-doping On Pl Propertiesmentioning

confidence: 83%

Current status for light-emitting diode with Eu-doped GaN active layer grown by MBE

Wakahara

Sekiguchi

Okada

et al. 2012

Journal of Luminescence

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“…We have shown before that the Eu 3+ luminescence under the used excitation conditions is dominated by the lines of two majority centers named Eu1 and Eu2 7 . A number of additional centers have been reported in GaN:Eu but are not efficiently excited for excitation above the band gap 16 . While Eu2 is only observed for excitation above the band gap, Eu1 is excited also below the band gap allowing an easy discrimination between the two centers.…”

Section: Resultsmentioning

confidence: 99%

High pressure annealing of Europium implanted GaN

Lorenz¹,

Miranda²,

Alves³

et al. 2012

Proceedings of SPIE

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GaN epilayers were implanted with Eu to fluences of 1×1013 Eu/cm 2 and 1×10 15 Eu/cm 2 . Post-implant thermal annealing was performed in ultra-high nitrogen pressures at temperatures up to 1450 ºC. For the lower fluence effective structural recovery of the crystal was observed for annealing at 1000 ºC while optical activation could be further improved at higher annealing temperatures. The higher fluence samples also reveal good optical activation; however, some residual implantation damage remains even for annealing at 1450 ºC which leads to a reduced incorporation of Eu on substitutional sites, a broadening of the Eu luminescence lines and to a strongly reduced fraction of optically active Eu ions. Possibilities for further optimization of implantation and annealing conditions are discussed.

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“…Therefore, the use of AlGaN with larger bandgap is promising to improve the luminescence efficiency. On the other hand, several emission peaks were observed in the Eu luminescence in GaN corresponding to optical sites [18][19][20][21][22]. From combined excitation-emission spectroscopy (CEES), it was clarified that each optical site in GaN has a different excitation and emission efficiency [19].…”

Section: Introductionmentioning

confidence: 97%