2016
DOI: 10.1002/pssr.201600006
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Excitation dependent quenching of luminescence in LED phosphors

Abstract: 1 Introduction Over the last decade phosphor converted light emitting diodes, pcLEDs, have impacted most lighting applications, including general illumination, backlighting of displays, automotive and specialty lighting. In many applications, high efficiency at high power density is desired to maximize LED "lumens per dollar", and leverage greater source brightness to enable novel optical system design or reduced cost from smaller optics. So far, the focus on efficiency vs power density has been predominantly … Show more

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Cited by 29 publications
(35 citation statements)
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“…The Cerium‐doped aluminum garnets show little dependence of photo‐quenching on temperature, but, depending on composition, may exhibit considerable thermal quenching. Our further investigations into the nature of the quenching process in (Ba,Sr) 2 Si 5 N 8 :Eu showed that the decrease in efficiency is closely predicted by quadratic dependence on the concentration of excited europium activators. This observation suggests that the excited state absorption is the likely culprit behind PTQ in these materials.…”
Section: Enabling Technologies For High‐luminance Ledsmentioning
confidence: 71%
“…The Cerium‐doped aluminum garnets show little dependence of photo‐quenching on temperature, but, depending on composition, may exhibit considerable thermal quenching. Our further investigations into the nature of the quenching process in (Ba,Sr) 2 Si 5 N 8 :Eu showed that the decrease in efficiency is closely predicted by quadratic dependence on the concentration of excited europium activators. This observation suggests that the excited state absorption is the likely culprit behind PTQ in these materials.…”
Section: Enabling Technologies For High‐luminance Ledsmentioning
confidence: 71%
“…To verify the number of maximum acceptable photons (N MAP ) for each phosphor, a In addition, to clearly distinguish the effects of self-heating of non-radiative recombination, the YAG was measured in CW mode and pulsed mode, respectively. 22,25 Light source irradiated in pulsed mode was excited with a frequency of 3.57 Hz to prevent photons from accumulating due to long decay time and thereby self-heating, as shown in Fig. 3.…”
Section: Methodsmentioning
confidence: 99%
“…Light-emitting diode (LED) lamps using phosphor conversion of 350–480 nm LED radiation have drawn much attention, and are notably expected to replace traditional illumination sources due to their superior features such as low power consumption, long lifetime, high efficiency, small volume, and low maintenance [1,2,3]. The InGaN-based white light-emitting diode (WLED) is a new kind of solid-state illumination technology, the efficiency of which has already surpassed that of traditional incandescent bulbs and fluorescent lamps [4,5,6,7,8,9,10,11]. WLEDs can be achieved by the incorporation of tricolor phosphors (blue, green, and red) with near-UV-InGaN chips or phosphors (green and red) with blue InGaN chips.…”
Section: Introductionmentioning
confidence: 99%
“…Phosphor materials play a very important role in WLEDs [4,5,6,7,8]. Although near-UV-InGaN chips can offer higher energy to pump the phosphors, they also present low photochemical stability under ultraviolet UV irradiation [9,10]. As a result, it is necessary to develop phosphors which may be excited by blue InGaN LED chips that have high levels of efficiency and small thermal quenching.…”
Section: Introductionmentioning
confidence: 99%