Excimer laser photolysis of tetramethylgermane

Laser‐induced dielectric breakdown in tetramethylgermane/tetramethyltin mixtures: deposition of nanostructured Sn/Ge/C and GeSn/C films

“…The absolute amounts of the depleted TMG and TMT correlate with the initial amounts of these compounds (Table 1) and are in keeping with more decomposition of compound, which is in excess at the beginning of the irradiation. The determined solid and gaseous products are in keeping with similar dissociation energy of the SnC and GeC bonds and with a complex decomposition mechanism (simplified in Scheme ) involving SnC and GeC homolysis and molecular hydrocarbons eliminations from Ge and Sn,57, 58 yielding elemental Sn and Ge, CH fissions allowing formation of carbonaceous agglomerates, and reactions of charged species formed in the dielectric breakdown.…”

IR laser co-pyrolysis of (CH3)2Te and (CH3)4Sn: Gas-phase formation and deposition of nanostructured SnTe

“…It is conceivable that some formation of ethane takes place through a molecular extrusion (intramolecular interaction of two CH 3 groups, e.g. [18]). We infer that the plausible reaction steps occurring during the irradiation of the (CH 3 ) 4 Sn-(CH 3 ) 2 Te-SF 6 mixture yield Sn and Te atoms and (CH 3 ) n Sn fragments (Scheme 1).…”

UV‐laser‐induced photolysis of trimethyl(vinyloxy)silane for chemical vapour deposition of polysiloxane films

“…Refs. [25][26][27] and methane molecular expulsion from TMVSi affords reactive methyl(ethenoxy)silene.…”

“…ArF laser irradiation of TMVSi results in TMVSi depletion and the formation of volatile hydrocarbons (in mol/mol of decomposed TMVSi  100): methane (25)(26)(27), ethene (19)(20)(21), ethane (13)(14)(15)(16)(17), propene (7-9) and buta-1,3-diene (2-3), propane (`1), and traces (`0.5) of trimethylsilane and tetramethylsilane. The formation of these products is accompanied by deposition of thin transparent films on the inside of the entire reactor.…”