Excimer laser induced quantum well intermixing: a reproducibility study of the process for fabrication of photonic integrated devices

Abstract

Excimer (ultraviolet) laser-induced quantum well intermixing (UV-Laser-QWI) is an attractive technique for wafer level post-growth processing and fabrication of a variety of monolithically integrated photonic devices. The results of UV-Laser-QWI employed for the fabrication of multibandgap III-V semiconductor wafers have demonstrated the attractive character of this approach although the process accuracy and reproducibility have remained relatively weakly covered in related literature. We report on a systematic investigation of the reproducibility of this process induced with a KrF excimer laser. The influence of both the irradiation with different laser doses and the annealing temperatures on the amplitude of intermixing in InGaAs/InGaAsP/InP quantum well heterostructures has been evaluated based on the photoluminescence measurements. Under optimized conditions, the process allows to blue shift the bandgap of a heterostructure by more than 100 nm with a remarkable 5.3% relative standard deviation.

Photoluminescence probing of interface evolution with annealing in InGa(N)As/GaAs single quantum wells

“…Note, however, that the lineshape analysis was based on a two-component assumption of additive of excitonic and free-carrier transitions and the exciton binding energy was derived indirectly with a plot of the ratio of free carriers to exciton populations against 1=k B T, 27 this is, however, in clear contrast to the nature of two excitonic components and the direct derivation of the exciton binding energy by diamagnetic shift in this study. (iv) As the QW interdiffusion has been applied as a post-growth approach for engineering the bandgap on selected areas to achieve monolithic integration of different optoelectronic functions, 46,47 the effect of the interfacial fluctuation of either thickness or composition deserves special attention in the annealing-induced bandshift engineering.…”

The 1200 nm‐Band InAs/GaAs Quantum Dot Intermixing by Dry Etching and Ion Implantation

“…For this purpose, we have developed the compositional intermixing technique using QDs (quantum dot intermixing [QDI]) for 1550 nm‐band QD samples that tailored the band gaps of QDs from the wavelength of 1550 nm for as‐grown QDs to about 1360 nm for the composition mixed QDI materials by about 190 nm wavelength shift, measured by photoluminescence (PL) spectra . This article presents that this QDI technique is applied to the 1200 nm‐band InAs/GaAs QD grown on the (100) GaAs substrate.…”

Freeform microlens array homogenizer for excimer laser beam shaping

“…Excimer lasers are powerful and versatile Lasing sources in the UV range of the electromagnetic spectra. Because of their high pulse energies, high average power, cold ablation and shorter wavelength [1,2], excimer lasers have countless applications, not only in the field of industrial manufacturing [3][4][5], but also in the field of scientific research [6,7] and medical treatment [8,9].…”