Excimer Laser Annealed poly-Si TFTs for CMOS Circuits

Sera, K.; Asada, Hideki; Okumura, F.; Tanabe, Hiroshi; Nakamura, Kenichi; Tada, Akio; Kaneko, S.

doi:10.7567/ssdm.1991.s-a-5

Cited by 3 publications

(1 citation statement)

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“…The dopant is diffused and activated during the excimer-laser crystallization step. The idea of using pre-doped silicon layers as dopant sources for drain and source areas of poly-Si TFTs extends back to the 1980s, [3][4][5][6][7][8] but none of these publications presented an operational display. N-channel test TFTs with different geometries were realized.…”

Section: Introductionmentioning

confidence: 99%

An LTPS active-matrix process with PECVD doped N[sup +] drain/source areas

Baur

Jelting

Benson

et al. 2006

J. Soc. Inf. Display

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Abstract— A low‐temperature polysilicon active‐matrix process without the need for ion implantation to dope drain and source areas of TFTs has been developed. A doped silicon layer is deposited by PECVD and structured prior to the deposition of the intrinsic silicon for the channel. The dopant is diffused and activated during the excimer‐laser crystallization step. N‐channel test TFTs with different geometries were realized. The TFT properties (mobility, on/off ratio, saturation, etc.) are suitable to realize AMLCDs and AMOLED displays and to integrate driver electronics on the displays. In addition to simple TFTs, a full‐color 4‐in. quarter‐VGA AMLCD was realized. The complete display (including photolithographic masks, active‐matrix backplane, and color‐filter/black‐matrix frontplane), and an addressing system were developed and manufactured at the Chair of Display Technology, University of Stuttgart, Germany. The substitution of ion doping by PECVD deposition overcomes a major limitation for panel sizes in poly‐Si technology and avoids large investment costs for ion‐implantation equipment.

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