Excess currents induced by hot hole injection and FN electron injection in thin SiO/sub 2/ films

Teramoto, Akinobu; Kobayashi, Kenzo; Ohno, Y.; Shigetomi, A.

doi:10.1109/16.918233

Cited by 17 publications

(11 citation statements)

References 31 publications

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“…This polarity dependence of V set can be explained by impact ionization theory of breakdown. According to this theory, if the insulator has high concentrated defects, the charge states of defects have much influence on breakdown field, and the charge states of defects is dominated by carrier injection ability of electrodes …”

Section: Resultsmentioning

confidence: 99%

A Study on Set Process and Its Influence on Performance of Resistive Switching

Yan

2017

Physica Status Solidi (a)

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In this paper, it has been found that resistive switching (RS) types are dominated by magnitude and polarities of set voltage (V set ). The difference in V set and its influences on RS behaviors between bipolar and unipolar RS are studied. There are two types of polarity dependence of V set in devices, which comes from the influence of defects on breakdown. The resistances of low resistance state (LRS) of bipolar are much smaller than these of unipolar RS under the same current compliance. The LRS resistances of bipolar RS show complex dependence on V set . It reveals that the oxygen vacancy (V O ) filaments properties and RS types are controlled by the intrinsic properties of breakdown and remnant defects.

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Section: Resultsmentioning

confidence: 99%

A Study on Set Process and Its Influence on Performance of Resistive Switching

Yan

2017

Physica Status Solidi (a)

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“…It has been reported that SILC is caused by the traps in SiO 2 , and the charge centroid of these traps is located 3 nm away from the SiO 2 / Si interface. [11][12][13] On the other hand, traps that cause RTS are considered to be located nearer to the SiO 2 / Si interface compared with the traps that cause SILC. 14 Considering the experimental results that the stress and temperature dependence of the anomalous SILC and RTS are very similar and the location of traps that cause the RTS and anomalous SILC, we suggest that the traps that cause the RTS and anomalous SILC are the same, but their locations in SiO 2 are different.…”

Section: Resultsmentioning

confidence: 99%

Stress-induced leakage current and random telegraph signal

Teramoto

Kumagai

Abe

et al. 2009

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Articles you may be interested inModel of random telegraph noise in gate-induced drain leakage current of high-k gate dielectric metal-oxidesemiconductor field-effect transistors Appl. Phys. Lett. 100, 033501 (2012); 10.1063/1.3678023 Random telegraph noise of junction leakage current in submicron devicesLow voltage stress induced leakage currents and surface states in ultrathin (1.2-2.5 nm) oxides

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“…To calculate the effective density of trapped holes Q + trap into tunnel oxide, it is necessary to exploit the J FN in the following time-dependent trapping rate equation [21], [22]:…”

Section: A Including the Ahhi Contribution And Hole Trappingmentioning

confidence: 99%

A Compact Model for Erratic Event Simulation in Flash Memory Arrays

Zambelli

Vincenzi

Olivo

2014

IEEE Trans. Electron Devices

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The simulation of the erratic bits phenomenon in Flash memory arrays for reliability projections has been a matter of study in the last decade from many standpoints. However, the majority of the developed simulation framework lacked both a direct link with the physics underlying the phenomenon and an easy integration with circuit simulators for fast analysis. In this paper, we have developed a compact model for erratic events starting from the PSP-model description of a Flash cell using Verilog-A. The model has been focused on the reproduction of the overerase phenomenon in a 90-nm NOR Flash array. Its accurate and fast simulation capabilities allowed the evaluation of the array reliability against the erratic erase operation

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Excess currents induced by hot hole injection and FN electron injection in thin SiO/sub 2/ films

Cited by 17 publications

References 31 publications

A Study on Set Process and Its Influence on Performance of Resistive Switching

A Study on Set Process and Its Influence on Performance of Resistive Switching

Stress-induced leakage current and random telegraph signal

A Compact Model for Erratic Event Simulation in Flash Memory Arrays

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