Evolution of surface morphology and strain during SiGe epitaxy

Pidduck, A. J.; Robbins, David J.; Cullis, A. G.; Leong, Wai Yie; Pitt, A. M.

doi:10.1016/0040-6090(92)90042-a

Cited by 214 publications

(89 citation statements)

References 17 publications

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“…The pressures and temperatures employed vary greatly between reactors, with values as low as 10 ±5 torr [18] and up to atmospheric pressure. [19] The growth temperature depends on the pressure and also on the Ge content, in order to prevent surface roughening or three-dimensional (3D) island growth, [20] but is normally in the range 500±600 C.…”

Section: Si 1±x Ge X Epitaxial Growth Techniquesmentioning

confidence: 99%

Silicon-Germanium Strained Layer Materials in Microelectronics

Paul¹

1999

Adv. Mater.

140

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Section: Si 1±x Ge X Epitaxial Growth Techniquesmentioning

confidence: 99%

Silicon-Germanium Strained Layer Materials in Microelectronics

Paul¹

1999

Adv. Mater.

140

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“…LCM occurs since, in essence, large atoms tend to incorporate at surface sites with large in-plane atomic spacing and small atoms incorporate at sites with small spacing. The spatial extent of the strain variations, and presumably of the LCM, varies over a wide range scaling with the inverse square of the average strain [4].…”

Section: (Received 20 April 2000)mentioning

confidence: 99%

Spontaneous Formation of Indium-Rich Nanostructures on InGaN(0001) Surfaces

et al. 2000

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InGaN(0001) surfaces prepared by molecular beam epitaxy have been studied using scanning tunneling microscopy and first-principles total energy calculations. Nanometer-size surface structures are observed consisting of either vacancy islands or ordered vacancy rows. The spontaneous formation of these structures is shown to be driven by significant strain in the surface layers and by the relative weakness of the In-N bond compared to Ga-N. Theory indicates that In will preferentially bind at the edges and interior of the structures, thereby giving rise to an inhomogeneous In distribution at the surface.

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“…Both strain-induced roughening and the formation of a misfit dislocation network above a critical thickness (leading to crosshatch) have been described before. [12][13][14][15] …”

mentioning

confidence: 99%

Comment on “Smooth relaxed Si0.75Ge0.25 layers on Si(001) via in situ rapid thermal annealing” [Appl. Phys. Lett. 83, 4321 (2003)]

Chrastina

2004

Applied Physics Letters

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Evolution of surface morphology and strain during SiGe epitaxy

Cited by 214 publications

References 17 publications

Silicon-Germanium Strained Layer Materials in Microelectronics

Silicon-Germanium Strained Layer Materials in Microelectronics

Spontaneous Formation of Indium-Rich Nanostructures on InGaN(0001) Surfaces

Comment on “Smooth relaxed Si0.75Ge0.25 layers on Si(001) via in situ rapid thermal annealing” [Appl. Phys. Lett. 83, 4321 (2003)]

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