Evolution of electroluminescence from multiple Si-implanted silicon nitride films with thermal annealing

Abstract

Influence of thermal annealing on electroluminescence ͑EL͒ from multiple-Si-implanted silicon nitride films has been investigated. A reduced injection current and an enhanced EL intensity have been obtained simultaneously by increasing the annealing temperature, which results in a higher EL quantum efficiency. In addition, four emission bands are identified, and their peak energies, intensities, and full widths at half maxima are found to change with annealing temperature. A model is proposed to illustrate the carrier transport, the mechanisms of the four emission bands, and the evolution of the EL bands with annealing as well. The two major bands and the minor ultraviolet band are explained in terms of the recombination of the injected electrons in either the silicon dangling-bond ͑ϵSi 0 ͒ states or the nitride conduction band with the injected holes in either the band tail states above the nitride valence band or the valence band itself, while the minor near infrared band is attributed to the Si nanocrystals formed in the thin film.

Synthesis of photoluminescent Si/SiO x core/shell nanoparticles by thermal disproportionation of SiO: structural and spectral characterization

“…Currently, a number of approaches to Si-NP fabrication have been developed: chemical [9,10], mechanochemical [11]; plasma-chemical [12]; electrochemical [13]; ion implantation [14]; magnetron sputtering [15]; laser ablation of a silicon target in supercritical fluids [16]; laser vaporization-controlled condensation (LVCC) technique, which has been described in several publications [17,18] and others (for the details see monographs [1,2]. We synthesize the core/shell Si/SiO x nanoparticles having an intense redinfrared photoluminescence by cost-effective and potentially scalable method of synthesis-thermal disproportionation of silicon monoxide in air at temperatures from 300 to 1350°C [8,19,20].…”

Er-doped Si-based electroluminescent capacitors: Role of different host matrices on the electrical and luminescence properties

“…Two peaks are clearly observed at around of 622 nm and 870 nm, respectively. The emission peak at 622 nm is associated to Sirelated defects in the silicon nitride matrix and originated by the implanted Si [9], [10]. Whereas the other band at around 870 nm is ascribed to electron-hole recombination within Sincs via quantum confinement [10], whose electron-hole pairs are generated by PF ionization.…”

Wavelength-Shifted Yellow Electroluminescence of Si Quantum-Dot Embedded 20-Pair SiNx/SiOx Superlattice by Ostwald Ripening Effect

“…The PL peaks located at 420 and 520 nm originate from the weak oxygen bond (WOB) defect and the radiative Si dangling bond center [34]- [36]. The PL peaks at 600 and 622 nm are attributed to the nonbridging oxygen hole center (NBOHC) and the silicon defect states ð Si 0 Þ [34], [37]. In addition, the nitrogen defect state ðN 0 2 Þ in the SiN x layer generates the PL with peak wavelength at 680 nm [38].…”