Er-doped Si-based electroluminescent capacitors: Role of different host matrices on the electrical and luminescence properties

Abstract

We report on the electrical and electroluminescence properties of four different layers based on Er-doped silicon oxide (or nitride) with (or without) silicon nanocrystals. Electrical measurements have allowed us to identify that samples composed by silicon nitride matrices present a Poole-Frenkeltype conduction, whereas those ones formed by silicon oxide matrices show a Fowler-Nordheim tunneling mechanism. In addition, infrared power efficiency at 1.54 m has shown to be two orders of magnitude larger for Er-doped silicon oxide layers than for Er-doped silicon nitrides. Moreover, an interesting trade off between power efficiency at 1.54 m and device operation lifetime has been observed by comparing both Er-doped silicon oxides and Er-doped silicon nitride layers.

Intense green-yellow electroluminescence from Tb+-implanted silicon-rich silicon nitride/oxide light emitting devices

“…The incorporation of Si-ncs was conceived to improve the conductivity and the device operation lifetime. 9 Subsequently, the silicon-rich silicon nitride layer was implanted with Tb þ ions, whose implantation energy (75 keV) and dose (1.9 Â 10 15 atoms/cm 2 ) were adjusted to generate a concentration of nearly 1.5% in the depth range of 20-25 nm. The implantation was followed by post annealing procedure at 900 C for 30 min in N 2 atmosphere to mitigate defects caused by implantation.…”

Narrowing of Broad Band Light Emitted from a SSI-LED

“…The performance and lifetime the LED are highly dependent on the defect density in the hetero-epitaxy structure, which is difficult to reduce to an extremely low number (4,5). LEDs can also be made of quantum dots (QDs) of semiconductor materials, e.g., nanocrystalline Si (nc-Si) in a SiO x or SiN x matrix (6,7). They usually suffer from the low emission efficiency and short lifetime (7).…”

“…LEDs can also be made of quantum dots (QDs) of semiconductor materials, e.g., nanocrystalline Si (nc-Si) in a SiO x or SiN x matrix (6,7). They usually suffer from the low emission efficiency and short lifetime (7). Separately, the Kuo's group reported a new type of solid-state incandescent LED (SSI-LED) that is made from a MOS structure containing a high dielectric constant (high-k) thin film, such as Zr-doped HfO 2 (ZrHfO), HfO x , and WO x (3,(8)(9)(10).…”