Narrowing of Broad Band Light Emitted from a SSI-LED

Abstract

The broad band light emitted from a SSI-LED has been narrowed down with the addition of a PECVD a-Si:H or SiN x thin film light filter. The a-Si:H film absorbs the light in the short wavelength range beyond which its transmittance increases with the increase of wavelength. The SiN x film shows strong interference effect related to its refractive index and thickness. The light filtering effect of both thin films can last for a long period of time in air. There are many possible applications of the narrow band light emitted from the thin film coated and IC-compatible SSI-LED.

Electrical properties of nano-resistors made from the Zr-doped HfO2high-kdielectric film

“…Because all nano-resistors are surrounded by the high quality high-k dielectric, the device can be operated in air for over 20 000 h continuously without failure [7]. The broad band light can be narrowed down to a narrow peak at a specific wavelength by the addition of a multi-layer thin film filter on the device for the possible usage as the light source in the on-chip optical interconnection [11,12]. In the low voltage operation range, this kind of nano-resistor device shows the diode-like current-voltage (I-V) curve that allows the current to flow from the substrate to the gate direction but not the opposite way [13].…”

Online Total Harmonic Distortion Analysis for Solid Oxide Fuel Cell Stack Monitoring in System Applications

“…THDA‐based monitoring is attractive due to its simplicity and transparency, while its main drawbacks are the requirement for an invasive excitation signal and ‐ for the time being ‐ more or less steady‐state operation of the system. In the fuel cell domain utilization of the method has been investigated for more than a decade and is reiterated regularly , . Ramschak et al.…”

Enhancement of SSI-LED Light Emission by Embedding CdS in the Zr-Doped HfO2High-kFilm

“…The principle of the light emission is the thermal excitation of nano-sized conductive paths, i.e., nano-resistors, formed from the breakdown of the highk dielectric stack (12). Furthermore, the broad-band light can be narrowed down to a specific wavelength after coating with a thin film filter, which is a suitable light source for the on-chip optical interconnect (13,14). In addition, the light emission from this kind of device can be enhanced by embedding with a layer of nanocrystals, e.g., nc-ZnO, nc-CdSe, and WOx, in the ZrHfO dielectric (6,11,12,15).…”