2018
DOI: 10.1149/08503.0053ecst
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Enhancement of SSI-LED Light Emission by Embedding CdS in the Zr-Doped HfO2High-kFilm

Abstract: Light emission improvement of the solid state incandescent light emitting devices by embedding CdS into the Zr-doped HfO2 high-k dielectric has been studied. Compared with the capacitor with the Zr-doped HfO2 gate dielectric, the CdS embedded sample have: 1) higher defect densities in bulk and interface layers, 2) a smaller breakdown strength, 3) a larger leakage current, 4) more light emission dots, and 5) a higher light emission intensity. The spectrum shape and color of the emitted light were influenced by … Show more

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Cited by 1 publication
(3 citation statements)
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“…Figure 4 shows (a) a photo of light emitting from NRs in a fabricated ZrHfO/CdS/ZrHfO high-k layer SSI-LED of gate diameter 300 μm at V g = −50 V, 20 and (b) a simulated figure of 5,500 NRs using the Python script described in the previous section. Below both images are greyscale versions for better comparison.…”
Section: Resultsmentioning
confidence: 99%
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“…Figure 4 shows (a) a photo of light emitting from NRs in a fabricated ZrHfO/CdS/ZrHfO high-k layer SSI-LED of gate diameter 300 μm at V g = −50 V, 20 and (b) a simulated figure of 5,500 NRs using the Python script described in the previous section. Below both images are greyscale versions for better comparison.…”
Section: Resultsmentioning
confidence: 99%
“…16,17 The NRs are formed from the dielectric breakdown of a metal oxide semiconductor (MOS) capacitor made on a Si wafer with a high-k dielectric, such as zirconium doped hafnium oxide (ZrHfO), and a transparent indium tin oxide (ITO) gate electrode. [17][18][19][20] When a large current passes through the NR, the local temperature becomes high enough to emit light according to the principle of black body radiation. The emitted light has a color corrected temperature (CCT) of 3,000-4,000 K and a color rendering index (CRI) greater than 95.…”
mentioning
confidence: 99%
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