Evolution of conductive filament and its impact on reliability issues in oxide-electrolyte based resistive random access memory

Abstract

The electrochemical metallization cell, also referred to as conductive bridge random access memory, is considered to be a promising candidate or complementary component to the traditional charge based memory. As such, it is receiving additional focus to accelerate the commercialization process. To create a successful mass product, reliability issues must first be rigorously solved. In-depth understanding of the failure behavior of the ECM is essential for performance optimization. Here, we reveal the degradation of high resistance state behaves as the majority cases of the endurance failure of the HfO2 electrolyte based ECM cell. High resolution transmission electron microscopy was used to characterize the change in filament nature after repetitive switching cycles. The result showed that Cu accumulation inside the filament played a dominant role in switching failure, which was further supported by measuring the retention of cycle dependent high resistance state and low resistance state. The clarified physical picture of filament evolution provides a basic understanding of the mechanisms of endurance and retention failure, and the relationship between them. Based on these results, applicable approaches for performance optimization can be implicatively developed, ranging from material tailoring to structure engineering and algorithm design.

ZnO and ZnO1−x based thin film memristors: The effects of oxygen deficiency and thickness in resistive switching behavior

“…However, the devices containing only native oxygen vacancies shifted from HRS to LRS after the continuous cycles were applied (inset of Figure 3 (a),(c)). The increase of the HRS resistance with the cycling can be explained by the degrading of the oxygen vacancies as carriers [23].…”

A learnable parallel processing architecture towards unity of memory and computing

“…S1 ) 8 9 10 11 . Owing to a series of advantages such as simple structure, low operation power, high switching speed and great scalability 12 13 14 15 16 , RS devices have been widely studied for both future memory technology 12 13 14 15 16 17 18 19 20 and computing applications 12 21 22 where the state variable is cell resistance rather than voltage or charge in traditional logic circuits 23 . By combining the nonvolatile memory and Boolean logic functions, “iMemComp” enables new features beyond von Neumann architecture: (i) parallel computing and (ii) logic learning ( Fig.…”

Research progresses of resistive random access memory

“…均匀性, 并使器件在每次转变中受到的损伤降到最低 因而大大改善了耐受性 [205][206][207] . [6,53,54,57,58,60,61,[63][64][65]71,73,[75][76][77][78]82,85,[88][89][90][91][92] . 该 类 RRAM 的 电 阻转变现象产生的原因是在电激励下固态电解质薄 膜中会形成或破灭金属性的导电细丝, 导电细丝主 http://engine.scichina.com/doi/10.1360/SSPMA2016-00293 龙世兵等.…”

“…Guo等人 [208] [63,71,75,82,84,88,108,110] . 图 7 Ag/ZnO:Mn/Pt器件导电细丝的TEM照片 [107] Figure 7 TEM images of CF in Ag/ZnO:Mn/Pt device [107].…”

“…意大利的CNR-INFM [244] (a) (b) (c) 图 13 (网络版彩图) 1R交叉阵列读过程中的串扰问题. (a) 2×2交叉阵列结构示意图; (b) "误读"现象示意图, 蓝色箭头表示 漏电通道; (c) 读出的2×2交叉阵列中每个器件的电阻值, 可以看出(1,1)器件被误读成导通状态 [241] http://engine.scichina.com/doi/10.1360/SSPMA2016-00293 [245] 在2011年的IEDM会议上报道了另外一种概念的 选通结构, 即1S1R结构, 与此类似的还有三星公司 [246] 提出的1TS1R结构(TS是双向阈值转变选通器件 [83,88,[90][91][92]200,203] .…”