Evidence of two disorder scales in Ga(AsBi)

Imhof, Sebastian; Wagner, Christian; Chernikov, A.; Koch, Martin; Kolata, Kolja; Köster, N. S.; Chatterjee, Sangam; Koch, S. W.; Lu, X.; Johnson, Shane; Beaton, Daniel A.; Tiedje, T.; Rubel, Oleg; Thränhardt, A.

doi:10.1002/pssb.201000835

Cited by 16 publications

(21 citation statements)

References 13 publications

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“…These calculations indicate that rare gas scattering can provide a precise measure of surface segregation in the outermost layer of dilute liquid alloys. Imhof et al [100] modelled temperature-dependent PL in a Ga(AsBi) structure in an excitonic hopping model and compared to experiment. When using a single energy scale, the theory and experiment cannot be brought into agreement.…”

Section: Other Methodsmentioning

confidence: 99%

Novel Dilute Bismide, Epitaxy, Physical Properties and Device Application

Wang

Zhang

et al. 2017

Crystals

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Abstract:Dilute bismide in which a small amount of bismuth is incorporated to host III-Vs is the least studied III-V compound semiconductor and has received steadily increasing attention since 2000. In this paper, we review theoretical predictions of physical properties of bismide alloys, epitaxial growth of bismide thin films and nanostructures, surface, structural, electric, transport and optic properties of various binaries and bismide alloys, and device applications.

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Section: Other Methodsmentioning

confidence: 99%

Novel Dilute Bismide, Epitaxy, Physical Properties and Device Application

Wang

Zhang

et al. 2017

Crystals

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“…It is well established that the optical spectra of dilute bismide alloys have relatively large spectral linewidths, which are dominated by inhomogeneous broadening related to the effects of Bi clustering and alloy disorder on the electronic properties of the VB states [41], [56]. In order to take these effects into account we have included inhomogeneous broadening in our theoretical calculations by convolving the calculated optical spectra with a Gaussian lineshape (the linewidth of which we denote by σ below).…”

Section: Theoretical Modelmentioning

confidence: 99%

Theory of the Electronic and Optical Properties of Dilute Bismide Quantum Well Lasers

Broderick

Harnedy

O’Reilly

2015

IEEE J. Select. Topics Quantum Electron.

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We present a theoretical study of the gain characteristics of GaBixAs1−x/(Al)GaAs dilute bismide quantum well (QW) lasers. After providing a brief overview of the current state of development of dilute bismide alloys for semiconductor laser applications, we introduce the theoretical model we have developed for the description of the electronic and optical properties of dilute bismide QWs. Using a theoretical approach based on a 12-band k·p Hamiltonian we then undertake a detailed analysis of the electronic and optical properties of a series of ideal and real GaBixAs1−x/(Al)GaAs QW laser structures as a function of Bi composition x. We theoretically optimize the gain characteristics of an existing low x device by varying the Al composition in the barrier layers, which governs a trade-off between the electronic and optical confinement. The theoretical results are compared to temperature-dependent spontaneous emission measurements at low x, which reveals the presence of significant Bi-induced inhomogeneous broadening of the optical spectra. We also investigate the gain characteristics of GaBixAs1−x/(Al)GaAs QW lasers at higher values of x, including a QW designed to emit at 1.55 µm. Our theoretical results elucidate the impact of Bi incorporation on the electronic and optical properties of GaAsbased QW lasers, and reveal several general trends in the gain characteristics as a function of x. Overall, our analysis confirms that dilute bismide alloys are a promising candidate material system for the development of highly efficient, uncooled GaAsbased QW lasers operating at telecommunication wavelengths.

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“…On the other hand, both spatial and valence band tail disorder from Bi incorporation had to be invoked to interpret photoluminescence (PL) experiments. The latter gave a broad low-temperature line width and a non-monotonous temperature dependence of both the PL peak position and the PL line width [27][28][29][30][31] , and had to be explained by two-scale disorder models.…”

Section: Introductionmentioning

confidence: 99%

Configuration dependence of band-gap narrowing and localization in diluteGaAs1−xBixalloys

et al. 2016

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Anion substitution with bismuth (Bi) in III-V semiconductors is an effective method for experimental engineering of the band gap Eg at low Bi concentrations (≤ 2%), in particular in gallium arsenide (GaAs). The inverse Bi-concentration dependence of Eg has been found to be linear at low concentrations x and dominated by a valence band-defect level anticrossing between As and Bi occupied p levels. Predictive models for the valence band hybridization require a first-principle understanding which can be obtained by density functional theory with the main challenges being the proper description of Eg and the spin-orbit coupling. By using an efficient method to include these effects, it is shown here that at high concentrations Eg is modified mainly by a Bi-Bi p orbital interaction and by the large Bi atom-induced strain. In particular, we find that at high concentrations the Bi-Bi interactions depend strongly on model periodic cluster configurations, which is not captured by tight-binding models. Averaging over various configurations supports the defect level broadening picture. This points to the role of different atomic configurations obtained by varying the experimental growth conditions in engineering arsenide band gaps, in particular for telecommunication laser technology.

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Evidence of two disorder scales in Ga(AsBi)

Cited by 16 publications

References 13 publications

Novel Dilute Bismide, Epitaxy, Physical Properties and Device Application

Novel Dilute Bismide, Epitaxy, Physical Properties and Device Application

Theory of the Electronic and Optical Properties of Dilute Bismide Quantum Well Lasers

Configuration dependence of band-gap narrowing and localization in diluteGaAs1−xBixalloys

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