The photoluminescence from a Ga͑AsBi͒ sample is investigated as a function of pump power and lattice temperature. The disorder-related features are analyzed using a Monte Carlo simulation technique. A two-scale approach is introduced to separately account for cluster localization and alloy disorder effects. The corresponding characteristic energy scales of 11 and 45 meV are deduced from the detailed comparison between experiment and simulation.
We report on the optical properties of nitrogen acceptor-doped ZnO epilayers in the medium and high doping regimes using temperature and excitation power-dependent, as well as time-resolved photoluminescence experiments. The epilayers were doped with ammonia during homoepitaxial growth on ZnO single-crystal substrates with different surface polarities. Significant differences in the optical characteristics of the epilayers are observed between growth on nonpolar a-plane, polar c-plane Zn-face substrates and polar c-plane O-face substrates, which demonstrates different incorporation of the nitrogen acceptor depending on the substrate polarity. The incorporation of nitrogen into the ZnO films ranges between 10 19 and 10 21 cm −3 as determined by secondary ion mass spectrometry. Within this doping range the samples change from lightly compensated to highly doped compensated. We discuss the unique photoluminescence features of nitrogen-doped ZnO epilayers within the concept of shallow donor-acceptor-pair recombinations and at the highest doping level by the appearance of potential fluctuations.
Dynamics of carrier recombination and localization in AlGaN quantum wells studied by time-resolved transmission spectroscopy Appl. Phys. Lett. 95, 091910 (2009); 10.1063/1.3222972Photoluminescence study of carrier dynamics and recombination in a strained InGaAsP/InP multiple-quantumwell structure Localization effects on the optical properties of GaAs 1Àx Bi x /GaAs single quantum wells (SQWs), with Bi contents ranging from x ¼ 1.1% to 6.0%, are investigated using continuous-wave and time-resolved photoluminescence. The temperature-and excitation density dependence of the PL spectra are systematically studied, and the carrier recombination mechanisms are analyzed. At low temperatures, the time-integrated PL emission is dominated by the recombination of localized electron-hole pairs due to the varying content and clustering of Bi in the alloy. The extracted energy scales fluctuate tremendously when the Bi content is varied with a weak tendency to increase with Bi content. Relatively low energy scales are found for the SQW with x ¼ 5.5%, which makes it a potential candidate for long-wavelength optoelectronic devices. V C 2013 AIP Publishing LLC.
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