Evidence of trapping levels and photoelectric properties of Cu3BiS3 thin films

Mesa, F.; Dussán, A.; Gordillo, G.

doi:10.1016/j.physb.2009.08.302

Cited by 32 publications

(18 citation statements)

References 20 publications

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“…Numerous evaporation methods such as coevaporation, fast evaporation, thermal evaporation, and electron beam (EB) [21][22][23][24][25][26][27][28][29][30][31][32] have been employed for the deposition of Cu 3 BiS 3 thin films. Cu 3 BiS 3 thin films were deposited using two different attitudes:…”

Section: Vacuum-based Evaporation Deposition Methodsmentioning

confidence: 99%

“…The deposited Cu 3 BiS 3 thin film had a ptype conductivity, a high absorption coefficient ( [10 4 cm -1 ), and optical energy gap 1.41 eV, indicating Cu 3 BiS 3 had best property to perform as an absorber layer in PV solar cell. Furthermore, Mesa et al [22] deposited Cu 3 BiS 3 thin films by a two-step evaporation process on glass substrates. In the first stage, a Bi thin layer was deposited with a flux of about 1 Å /s, and in second stage Cu is evaporated keeping the flux of about 0.8 Å /s.…”

Section: Vacuum-based Evaporation Deposition Methodsmentioning

confidence: 99%

“…It was also reported that grain size and electrical conductivity of Cu 3 BiS 3 were influenced by the Cu mass ratio. Then, Mesa et al [24] synthesized thin films of Cu 3 BiS 3 by co-evaporation as described earlier [22,23]. Hall Effect, Seebeck effect, and surface photovoltage (SPV) measurement showed that Cu 3 BiS 3 had a p-type semiconductor with Hall mobility, free carrier concentration, and thermoelectric power of 4 cm 2 /V s, 2 9 10 16 cm -3 and 0.73 mV/K, respectively.…”

Section: Vacuum-based Evaporation Deposition Methodsmentioning

confidence: 99%

“…In 2012 Mesa et al [27] presented the results from a study held on Al/Cu 3 BiS 3 /Buffer/ZnO, using a high-resolution transmission electron microscopy (HRTEM) with In 2 S 3 and ZnS as a buffer layer. The Cu 3 BiS 3 was prepared by two-stage co-evaporation process with film thickness of *1 lm as reported by Mesa et al [21,22]. The ZnS buffer layer was deposited by chemical bath deposition (CBD) method using thiourea and zinc acetate as a precursor solution for S 2-and Zn 2?…”

Section: Vacuum-based Evaporation Deposition Methodsmentioning

confidence: 99%

“…7. Compared with regular thin films [22], a flower-like, nanosheet, 3D flower-like ball, etc., pattern indicates a high surface area, which has potential applications in the area of energy conversions and sensors [42]. In addition to this, Liang et al [62] reported the efficiency of solar cells depends on the surface morphology.…”

Section: Non-vacuum-based Other Deposition Techniquesmentioning

confidence: 99%

See 4 more Smart Citations

A comprehensive review on synthesis and characterizations of Cu3BiS3 thin films for solar photovoltaics

Deshmukh

Kheraj

2017

Nanotechnol. Environ. Eng.

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Since the last few decades, light-absorbing materials based on CuInGaSe 2 (CIGS), CuInS 2 (CIS), and CdTe have dominated the research in thin-film solar cells.To fabricate large-scale solar cells from these materials, problems may arise due to limited availability of the constituents, viz. Se, In, Cd, and Te, and the toxicity of some of these elements. Hence, recent research efforts are attentive toward abundantly available non-toxic, larger value of absorption coefficient and non-conventional elements. The Cu 3 BiS 3 having wittichenite orthorhombic structure is one the most promising absorber layer candidates for low-cost thin-film solar cells. It has suitable direct band gap (1.10-1.86 eV), large absorption coefficient (10 5 cm -1 ) with composition of earth abundant, and relatively non-toxic and cost-effective constituents. Till now, a majority work was done on the preparation of Cu 3 BiS 3 thin films by various techniques. Therefore, a comprehensive review of recent literature of Cu 3 BiS 3 is urgently required. This paper will review the various techniques that have been used to deposit Cu 3 BiS 3 semiconductor with the hope of new paths for the beginner.

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Section: Vacuum-based Evaporation Deposition Methodsmentioning

confidence: 99%

Section: Vacuum-based Evaporation Deposition Methodsmentioning

confidence: 99%

Section: Vacuum-based Evaporation Deposition Methodsmentioning

confidence: 99%

Section: Vacuum-based Evaporation Deposition Methodsmentioning

confidence: 99%

Section: Non-vacuum-based Other Deposition Techniquesmentioning

confidence: 99%

See 3 more Smart Citations

A comprehensive review on synthesis and characterizations of Cu3BiS3 thin films for solar photovoltaics

Deshmukh

Kheraj

2017

Nanotechnol. Environ. Eng.

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Study of the growth process and optoelectrical properties of nanocrystalline Cu₃BiS₃ thin films

Mesa

Dussán

Gordillo

2010

Phys. Status Solidi (c)

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Cu3BiS3 thin films were prepared on soda‐lime glass substrates by co‐evaporation of the precursors in a two‐step process; for that, the metallic precursors were evaporated from tungsten crucibles in the presence of elemental sulphur evaporated from a tantalum effusion cell. The films were characterized by spectral transmittance, Atomic Force Microscopy, X‐ray Photoelectron Spectroscopy, Scanning Electron Microscopy and electrical measurements to investigate the effect of growth conditions on the optical, morphological and electrical properties. The results revealed that the Cu3BiS3 films present p‐type conductivity, a high absorption coefficient (greater than 104 cm–1), and an energy band gap, Eg, of about 1.39 eV. We observed from Atomic Force Microscopy and electrical measurements that grain size and electric conductivity of the Cu3BiS3 samples are influenced by the copper mass ratio in this material. We found, in the high‐temperature range above room temperature, that carrier transport is thermally activated with activation energies fluctuating between 0.17 and 0.28 eV. This suggests that this compound has good properties to perform as absorbent layer in thin‐film solar cells. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Synthesis of Cu3BiS3 and AgBiS2 crystallites with controlled morphology using hypocrellin template and their catalytic role in the polymerization of alkylsilane

Yan

Zhang

et al. 2012

J Mater Sci

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Evidence of trapping levels and photoelectric properties of Cu3BiS3 thin films

Cited by 32 publications

References 20 publications

A comprehensive review on synthesis and characterizations of Cu3BiS3 thin films for solar photovoltaics

A comprehensive review on synthesis and characterizations of Cu3BiS3 thin films for solar photovoltaics

Study of the growth process and optoelectrical properties of nanocrystalline Cu₃BiS₃ thin films

Synthesis of Cu3BiS3 and AgBiS2 crystallites with controlled morphology using hypocrellin template and their catalytic role in the polymerization of alkylsilane

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Evidence of trapping levels and photoelectric properties of Cu3BiS3 thin films

Cited by 32 publications

References 20 publications

A comprehensive review on synthesis and characterizations of Cu3BiS3 thin films for solar photovoltaics

A comprehensive review on synthesis and characterizations of Cu3BiS3 thin films for solar photovoltaics

Study of the growth process and optoelectrical properties of nanocrystalline Cu3BiS3 thin films

Synthesis of Cu3BiS3 and AgBiS2 crystallites with controlled morphology using hypocrellin template and their catalytic role in the polymerization of alkylsilane

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Study of the growth process and optoelectrical properties of nanocrystalline Cu₃BiS₃ thin films