Evidence for the existence of an ordered state in Ga0.5In0.5P grown by metalorganic vapor phase epitaxy and its relation to band-gap energy

Gomyo, Akiko; Suzuki, Tohru; Kobayashi, Kenichi; Kawata, S.; Hino, Isao; Yuasa, T.

doi:10.1063/1.98062

Cited by 437 publications

(76 citation statements)

References 8 publications

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“…On the other hand, it is well known that MOVPE-grown ternary alloys usually exhibit an atomic ordering [6], i.e., within GaInP 2 layers lattice-matched to a GaAs (001) oriented substrates, a superlattice structure, made of alternate In-rich and Ga-rich {111} diagonal planes with interleaving planes of P atoms, is © 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim www.crt-journal.org spontaneously formed during the growth process. This CuPt-type atomic ordering causes a reduction of the band-gap energy (with respect to its value in the disordered material) and a splitting of the valence band [7].…”

Section: Introductionmentioning

confidence: 99%

Temperature dependence of photoluminescence from ordered GaInP₂ epitaxial layers

Prutskij¹,

Pelosi²

2009

Cryst. Res. Technol.

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The temperature behavior of the integrated intensity of photoluminescence (PL) emission from ordered GaInP 2 epitaxial layer was measured at temperatures of 10 -300 K. Within this temperature range the PL emission is dominated by band-to-band radiative recombination. The PL intensity temperature dependence has two regions: at low temperatures it quenches rapidly as the temperature increases, and above 100 K it reduces slowly. This temperature behavior is compared with that of disordered GaInP 2 layer. The specter of the PL emission of the disordered layer has two peaks, which are identified as due to donor-accepter (D-A) and band-to-band recombination. The PL intensity quenching of these spectral bands is very different: With increasing temperature, the D-A peak intensity remains almost unchanged at low temperatures and then decreases at a higher rate. The intensity of the band-to-band recombination peak decays gradually, having a higher rate at low temperatures than at higher temperatures. Comparing these temperature dependencies of these PL peaks of ordered and disordered alloys and the temperature behavior of their full width at half maximum (FWHM), we conclude that the different morphology of these alloys causes their different temperature behavior.

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Section: Introductionmentioning

confidence: 99%

Temperature dependence of photoluminescence from ordered GaInP₂ epitaxial layers

Prutskij¹,

Pelosi²

2009

Cryst. Res. Technol.

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“…Table II is the use of disordered GaInP to passivate GaInP. The band gap of GaInP (at a fixed composition) varies with growth conditions because of ordering of the Ga and In atoms on the group III sublattice [12,13]. Thus, a high-band-gap (disordered) GaInP layer can be used to passivate a low-band-gap (partially ordered) GaInP layer.…”

Section: Theoretical Approachmentioning

confidence: 99%

Passivation of Interfaces in High-Efficiency Photovoltaic Devices

et al. 1999

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Solar cells made from III-V materials have achieved efficiencies greater than 30%. Effectively ideal passivation plays an important role in achieving these high efficiencies. Standard modeling techniques are applied to Ga 0.5 In 0.5 P solar cells to show the effects of passivation. Accurate knowledge of the absorption coefficient is essential (see appendix). Although ultralow (<2 cm/s) interface recombination velocities have been reported, in practice, it is difficult to achieve such low recombination velocities in solar cells because the doping levels are high and because of accidental incorporation of impurities and dopant diffusion. Examples are given of how dopant diffusion can both help and hinder interface passivation, and of how incorporation of oxygen or hydrogen can cause problems.

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“…In particular, GaInP 2 alloy exhibits atomic ordering [7], i.e., within a GaInP 2 layer, latticematched to a GaAs (001) oriented substrate, a superlattice structure, made of alternately In-rich and Ga-rich {111} diagonal planes with interleaving planes of P atoms, is spontaneously formed during the growth process. This CuPt-type atomic ordering causes a reduction of the band-gap energy (with respect to its value in the disordered material) and a splitting of the valence band [8].…”

Section: Introductionmentioning

confidence: 99%

Temperature quenching of photoluminescence of ordered GaInP₂ alloy under different excitation densities

Prutskij

Pelosi

Attolini

2011

Cryst. Res. Technol.

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The photoluminescence (PL) emission from an epi-structure containing an atomically ordered GaInP 2 layer and a GaAs layer was studied under excitation power densities of 0.03 -3 W/cm 2 at temperatures of 10 to 300 K. The quenching of the integrated PL intensity from both: the GaInP 2 and the GaAs layers is stronger under low excitation, than under high excitation density. The temperature dependence, however, have different shapes being the PL decay observed for the GaInP 2 layer stronger than that for the GaAs layer. Comparing the temperature dependence of the PL intensity from the ordered GaInP 2 and the GaAs layers under different excitation densities and analyzing them together, we conclude that the inhomogeneity of the ordered layer is responsible for the different temperature behavior of the GaInP 2 alloy PL emission. To explain the experimentally observed PL intensity temperature dependence an additional nonradiative recombination mechanism due to a thermally activated escape of the carriers from its confinement within regions of lower bandgap has to be taken into account.

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Evidence for the existence of an ordered state in Ga0.5In0.5P grown by metalorganic vapor phase epitaxy and its relation to band-gap energy

Cited by 437 publications

References 8 publications

Temperature dependence of photoluminescence from ordered GaInP₂ epitaxial layers

Temperature dependence of photoluminescence from ordered GaInP₂ epitaxial layers

Passivation of Interfaces in High-Efficiency Photovoltaic Devices

Temperature quenching of photoluminescence of ordered GaInP₂ alloy under different excitation densities

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Evidence for the existence of an ordered state in Ga0.5In0.5P grown by metalorganic vapor phase epitaxy and its relation to band-gap energy

Cited by 437 publications

References 8 publications

Temperature dependence of photoluminescence from ordered GaInP2 epitaxial layers

Temperature dependence of photoluminescence from ordered GaInP2 epitaxial layers

Passivation of Interfaces in High-Efficiency Photovoltaic Devices

Temperature quenching of photoluminescence of ordered GaInP2 alloy under different excitation densities

Contact Info

Product

Resources

About

Temperature dependence of photoluminescence from ordered GaInP₂ epitaxial layers

Temperature dependence of photoluminescence from ordered GaInP₂ epitaxial layers

Temperature quenching of photoluminescence of ordered GaInP₂ alloy under different excitation densities