Temperature dependence of photoluminescence from ordered GaInP₂ epitaxial layers

Abstract

The temperature behavior of the integrated intensity of photoluminescence (PL) emission from ordered GaInP 2 epitaxial layer was measured at temperatures of 10 -300 K. Within this temperature range the PL emission is dominated by band-to-band radiative recombination. The PL intensity temperature dependence has two regions: at low temperatures it quenches rapidly as the temperature increases, and above 100 K it reduces slowly. This temperature behavior is compared with that of disordered GaInP 2 layer. The specter of the PL emission of the disordered layer has two peaks, which are identified as due to donor-accepter (D-A) and band-to-band recombination. The PL intensity quenching of these spectral bands is very different: With increasing temperature, the D-A peak intensity remains almost unchanged at low temperatures and then decreases at a higher rate. The intensity of the band-to-band recombination peak decays gradually, having a higher rate at low temperatures than at higher temperatures. Comparing these temperature dependencies of these PL peaks of ordered and disordered alloys and the temperature behavior of their full width at half maximum (FWHM), we conclude that the different morphology of these alloys causes their different temperature behavior.

Evidence of carrier localization in photoluminescence spectroscopy studies of mid-wavelength infrared InAs/InAs1−Sb type-II superlattices

“…The PL peak blue shift with increasing temperature below 60 K for sample A, as shown in Fig. 2(a), has been reported in ternary (GaAsBi, 16 GaInP 2 , 17 and GaAsN 18 ), quantum well (QW) (GaSb/GaAs, 19 InAs/GaSb, 20 and GaAsSbN/GaAs 21,22 ) and SL (InAs/GaSb, 23 InGaAs/GaAsSb, 24 InGaN/AlGaN 25 ) materials. Two explanations have been assigned to this behavior in the literature.…”

“…The second explanation for the PL peak position blue shift at low temperatures is carrier localization due to compositional variation and/or layer width fluctuations. 16,17,18,21,22,25 Local regions of slightly varying compositions create spatial perturbations in the local potential, resulting in band tails in the density of states, which confine carriers to the lowest energy levels at low temperatures. As the temperature increases, the localized carriers obtain sufficient thermal energy to escape into the extended states (SL minibands), causing the blue shift in the PL peak position.…”

Temperature quenching of photoluminescence of ordered GaInP2 alloy under different excitation densities

“…This CuPt-type atomic ordering causes a reduction of the band-gap energy (with respect to its value in the disordered material) and a splitting of the valence band [8]. In our previous work [9], the integrated intensity of the photoluminescence (PL) emission from an ordered GaInP 2 epitaxial layer was studied at temperatures of 10 -300 K and its temperature behavior was compared with that of a disordered GaInP 2 layer. For the ordered GaInP 2 using the simple model mentioned before, we could not obtain a good fit to the experimental points within all the temperature range.…”