Evaluation of Solder Joint Reliability in 3D Packaging Memory Devices under Thermal Shock

Zhou, Shuai; Lin, Zhenpei; Qiu, Baojun; Wang, Han; Xiong, Jingang; He, Chao; Zhou, Bei; Pan, Yiliang; Huang, Renbin; Bao, Yiliang; Cai, Nian

doi:10.3390/electronics11162556

Cited by 8 publications

(9 citation statements)

References 34 publications

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“…Shuai et al [143] employed a finite element simulation and thermal shock test to evaluate the reliability of solder joints of 3D PiP memory. The results show that the main failure mechanism of solder joints was thermal fatigue failure, and cracks were caused by the accumulation of plastic and creep strain.…”

Section: The Reliability Of Coc Package Memory Under Hygrothermal Stressmentioning

confidence: 99%

“…In [53,[141][142][143][144], the reliability research of PiP packaging is mainly carried out via a combination of finite element simulation and test verification, but the number of research topics classified as thermal stress and hygrothermal stress is relatively lower than those classified as PoP and CoC packaging. In addition, due to the internal encapsulation structure of PiP packaging devices and the absence of movable components, reliability research on mechanical stress is only carried out after assembly at board level.…”

Section: The Reliability Of Coc Package Memory Under Hygrothermal Stressmentioning

confidence: 99%

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Survey of Reliability Research on 3D Packaged Memory

Zhou

et al. 2023

Electronics

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As the core carrier of information storage, a semiconductor memory device is a basic product with a large volume that is widespread in the integrated circuit industry. With the rapid development of semiconductor manufacturing processes and materials, the internal structure of memory has gradually shifted from a 2D planar packaging structure to a 3D packaging structure to meet industry demands for high-frequency, high-speed, and large-capacity devices with low power consumption. However, advanced 3D packaging technology can pose some reliability risks, making devices prone to failure, especially when used in harsh environmental conditions, including temperature changes, high temperature and humidity levels, and mechanical stress. In this paper, the authors introduce the typical structure characteristics of 3D packaged memory; analyze the reasons for device failure caused by stress; summarize current research methods that utilize temperature, mechanical and hygrothermal theories, and failure models; and present future challenges and directions regarding the reliability research of 3D packaged memory.

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Section: The Reliability Of Coc Package Memory Under Hygrothermal Stressmentioning

confidence: 99%

Section: The Reliability Of Coc Package Memory Under Hygrothermal Stressmentioning

confidence: 99%

Survey of Reliability Research on 3D Packaged Memory

Zhou

et al. 2023

Electronics

Self Cite

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“…The resistance of a metal sample with known length and area could be measured using appropriate techniques. A basic ohmmeter utilizes two contacts, one at each end of the sample, to determine resistance; however, more precise measurements can be obtained by employing a four-contact device [ 20 , 21 ].…”

Section: Electrical Characteristicsmentioning

confidence: 99%

Fabrication and Characterization of Three-Dimensional Microelectromechanical System Coaxial Socket Device for Semiconductor Package Testing

Kim

Yook

Kim³

et al. 2023

Sensors

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With the continuous reduction in size and increase in density of semiconductor devices, there is a growing demand for contact solutions that enable high-speed testing in automotive, 5G, and artificial intelligence-based devices. Although existing solutions, such as spring pins and rubber sockets, have been effective in various applications, there is still a need for new solutions that accommodate fine-pitch, high-speed, and high-density requirements. This study proposes a novel three-dimensional microelectromechanical system spring structure coaxial socket for semiconductor chip package testing. The socket design incorporates impedance matching for high-speed testing and addresses the challenges of fine-pitch and high-density applications. Mechanical tests are conducted to evaluate the durability of the structure and electrical tests are performed to verify electrical characteristics by utilizing a vector network analyzer up to 60 GHz. Our results have revealed promising performance and will help in further optimizing the design for potential production in the field and industry.

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“…The main reason of failure in solder joints comes from the thermomechanical cyclic stresses caused by a variety of components with distinct coefficients of thermal expansion (CTE) [8,9]. Many investigations have been carried out to address the damage evolution of solder joints and understand the failure mechanism, which defines the operational performance of electronics systems [10][11][12]. To provide some instances, Samavatian et al [13] found that the extra effects of creep on the fatigue mechanism led to the accelerated damage of solder joints in power semiconductors.…”

Section: Introductionmentioning

confidence: 99%

Expectation–maximization machine learning model for micromechanical evaluation of thermally-cycled solder joints in a semiconductor

Chen

2023

J. Phys.: Condens. Matter

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This paper aims to study the microstructural and micromechanical variations of solder joints in a semiconductor under the evolution of thermal-cycling loading. For this purpose, a model was developed on the basis of expectation-maximization machine learning (ML) and nanoindentation mapping. Using this model, it is possible to predict and interpret the microstructural features of solder joints through the micromechanical variations (i.e. elastic modulus) of interconnection. According to the results, the classification of Sn-based matrix, intermetallic compounds and the grain boundaries with specified elastic-modulus ranges was successfully performed through the ML model. However, it was detected some overestimations in regression process when the interfacial regions got thickened in the microstructure. The ML outcomes also revealed that the thermal-cycling evolution was accompanied with stiffening and growth of intermetallic compounds; while the spatial portion of Sn-based matrix decreased in the microstructure. It was also figured out that the stiffness gradient becomes intensified in the treated samples, which is consistent with this fact that the thermal cycling increases the mechanical mismatch between the matrix and the intermetallic compounds.

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Evaluation of Solder Joint Reliability in 3D Packaging Memory Devices under Thermal Shock

Cited by 8 publications

References 34 publications

Survey of Reliability Research on 3D Packaged Memory

Survey of Reliability Research on 3D Packaged Memory

Fabrication and Characterization of Three-Dimensional Microelectromechanical System Coaxial Socket Device for Semiconductor Package Testing

Expectation–maximization machine learning model for micromechanical evaluation of thermally-cycled solder joints in a semiconductor

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