Evaluation of SiO2/GeO2/Ge MIS Interface Properties by Low Temperature Conductance Method

Matsubara, Hiroshi; Kumagai, Hiroshi; Sugahara, Satoshi; Takenaka, Mitsuru; Takagi, Shinichi

doi:10.7567/ssdm.2007.a-2-1

Cited by 8 publications

(8 citation statements)

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“…To quantitatively evaluate the MOS interface quality of those capacitors, the D it values were determined by a low temperature conductance method, with the correction of surface potential fluctuation. [19][20][21][22]…”

Section: Methodsmentioning

confidence: 99%

Suppression of ALD-Induced Degradation of Ge MOS Interface Properties by Low Power Plasma Nitridation of GeO2

Zhang

Iwasaki

Taoka

et al. 2011

J. Electrochem. Soc.

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A high quality interfacial layer (IL) is important to realize advanced high-k/Ge gate stacks for Ge metal oxide semiconductor (MOS) devices. Here, GeO 2 can be regarded as one of the most promising interfacial layers (ILs). However, significant degradation of ultra thin GeO 2 IL after atomic layer deposition (ALD) of high-k films has been reported, making it difficult to integrate GeO 2 with high-k gate dielectrics. In this study, an in-situ plasma nitridation method is employed for plasma oxidized GeO 2 layers in order to realize GeO 2 -based ILs robust against ALD processes, resulting in a GeON layer with tunable nitrogen concentration. The impact of the nitrogen content on the properties of GeON IL is examined. It is found that the GeON IL with low nitrogen content exhibits good MOS interface properties, inherent to the GeO 2 /Ge interface, as well as its tolerance for ALD-induced damages.

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Section: Methodsmentioning

confidence: 99%

Suppression of ALD-Induced Degradation of Ge MOS Interface Properties by Low Power Plasma Nitridation of GeO2

Zhang

Iwasaki

Taoka

et al. 2011

J. Electrochem. Soc.

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“…2 (a) and (b), respectively [27]. Here, the measurement temperature was varied from 54 K to 257 K. Also, the effects of the surface potential fluctuation on the conductance were taken into account in evaluating D it [28].…”

Section: Measurement Of Interface State Density Over a Wide Range Of mentioning

confidence: 99%

Interfacial Control and Electrical Properties of Ge MOS structures

2009

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Ge MOSFETs have generated a strong interest as a current drive enhancement technology beyond strained-Si technologies. The key technologies for realizing Ge MOSFETs are the formation of superior MOS interfaces. However, control technologies of to provide superior Ge MOS/MIS interfaces has not been fully established yet. In this report we review recent technologies for controlling Ge MOS interfaces. In particular, we report the interface properties of thermally-oxidized GeO2/Ge and Si-passivated GeO2 interfaces in detail. In addition, we introduce a new measurement method for studying the physical origin of low current drive in Ge n-MOSFETs, where electron and hole mobility of SiO2/Ge interfaces are evaluated for an identical MOS interface by using metal source/drain GOI MOSFETs with a Kelvin pattern.

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“…3 shows energy distribution of interface trap density (D it ) for Ge MOS devices with GeO 2 IL formed by H 2 O plasma and H 2 O 2 solution treatments. The D it value was extracted by a low-temperature conductance method at −40°C [9], [27], [28]. In Fig.…”

Section: Methodsmentioning

confidence: 99%

An Ultralow EOT Ge MOS Device With Tetragonal HfO2 and High Quality Hf<italic>x</italic>Ge<italic>y</italic>O Interfacial Layer

Chang‐Liao

Liu

et al. 2014

IEEE Trans. Electron Devices

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A Ge MOS device with an ultralow equivalent oxide thickness of ∼0.5 nm and acceptable leakage current of 0.5 A/cm 2 is presented in this paper. The superior characteristics can be attributed to a tetragonal HfO 2 with a higher k value (k ∼ 31) and comparable bandgap. In addition, a Ge MOS device with tetragonal phase HfO 2 (t-HfO 2 ) also shows a lower leakage current and better thermal stability. The mechanisms for t-HfO 2 formation may be explained by the little Ge diffusion from Ge substrate and oxygen deficiency, which are obtained by in situ interfacial layer (IL) formation and high-k processes. The IL with k ∼ 13 can be formed by in situ H 2 O plasma treatment. Moreover, a Ge MOS device with the IL grown by H 2 O plasma shows smaller interface trap density and hysteresis effects due to a high composition of Ge +4 .

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Evaluation of SiO2/GeO2/Ge MIS Interface Properties by Low Temperature Conductance Method

Cited by 8 publications

References 0 publications

Suppression of ALD-Induced Degradation of Ge MOS Interface Properties by Low Power Plasma Nitridation of GeO2

Suppression of ALD-Induced Degradation of Ge MOS Interface Properties by Low Power Plasma Nitridation of GeO2

Interfacial Control and Electrical Properties of Ge MOS structures

An Ultralow EOT Ge MOS Device With Tetragonal HfO<sub>2</sub> and High Quality Hf<sub><italic>x</italic></sub>Ge<sub><italic>y</italic></sub>O Interfacial Layer

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