Evaluation of reverse recovery characteristic of silicon carbide metal–oxide–semiconductor field‐effect transistor intrinsic diode

Wang, Zhaohui; Zhang, Junming; Wu, Xinke; Sheng, Kuang

doi:10.1049/iet-pel.2014.0965

Cited by 30 publications

(12 citation statements)

References 29 publications

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“…As Figure 5b shows, the SiC MOSFET uses traditional planar gate. The body diode of SiC MOSFET shows excellent switching performance compared with the SiC Schottky diode [35]. For SiC IGBT, due to the lack of body diode, an n+ contact is introduced in the collector and a PiN diode (in red circle) is formed between emitter and collector.…”

Section: Device Comparisonmentioning

confidence: 99%

Comparative Design of Gate Drivers with Short-Circuit Protection Scheme for SiC MOSFET and Si IGBT

Yin

Liu

et al. 2019

Energies

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Short-circuit faults are the most critical failure mechanism in power converters. Among the various short-circuit protection schemes, desaturation protection is the most mature and widely used solution. Due to the lack of gate driver integrated circuit (IC) with desaturation protection for the silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET), the conventional insulated gate bipolar transistor (IGBT) driver IC is normally used as these two devices have similar gate structure and driving mechanism. In this work, a gate driver with desaturation protection is designed for the 1.2-kV/30-A SiC MOSFET and silicon (Si) IGBT with the off-the-shelf driver IC. To further limit voltage-overshoot at the rapid turn-off transient, the active clamping circuit is introduced. Based on the experiments of switching characterization and short-circuit test, the SiC MOSFET shows faster switching speed, more serious electromagnetic interference (EMI) issue, lower switching loss (half), and higher short-circuit current (1.6 times) than the Si IGBT, even with a slower gate driver. Thus, a rapid response speed is required for the desaturation protection circuit of SiC MOSFET. Due to the long delay time of the existing desaturation protection scheme, it is technically difficult to design a sub- μ s protection circuit. In this work, an external current source is proposed to charge the blanking capacitor. A short-circuit time of 0.91 μ s is achieved with a reliable protection. Additionally, the peak current is reduced by 22%.

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Section: Device Comparisonmentioning

confidence: 99%

Comparative Design of Gate Drivers with Short-Circuit Protection Scheme for SiC MOSFET and Si IGBT

Yin

Liu

et al. 2019

Energies

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“…The reverse recovery charge of SiC MOSFET module is significantly smaller than that of Si IGBT module due to the absence of reverse recovery charge in SiC Schottky diode. In addition, it also has been proven that the body diode of SiC MOSFET shows much shorter reverse recovery time and lower peak current than Si PiN diode [21]. However, one of the drawbacks of SiC MOSFET module is the large output capacitance, which is due to the high doping concentration of drift region.…”

Section: Comparison Of Si Igbt and Sic Mosfet Power Modulesmentioning

confidence: 99%

Experimental Comparison of High‐Speed Gate Driver Design for 1.2‐kV/120‐A Si IGBT and SiC MOSFET Modules

Yin

Tseng

Simanjorang³

et al. 2017

IET Power Electronics

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Silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) is regarded as an attractive replacement for Si insulated gate bipolar transistor (IGBT) in high-power density applications due to its high switching speed and low switching loss. However, to fully utilise these benefits, the gate driver of the SiC MOSFET needs to be optimised to meet its special driving requirements. Fundamentally, both gate drivers for Si IGBT and SiC MOSFET share similar design methodology since these two power devices have the same MOS-gated structure. However, one of the major challenges in the gate driver design for SiC MOSFET is overcoming the electromagnetic interference, which is resulted from the much higher dv/dt and di/dt ratios during the switching transition. In this study, high-speed gate drivers for Si IGBT and SiC MOSFET power modules of similar ratings of 1.2 kV/120 A have been designed. The performances of gate driver have been experimentally evaluated by a double pulse test. The design considerations of gate driver to enable the replacement of Si IGBT by SiC MOSFET have been conclusively investigated and presented in this study.

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“…Currently, the silicon‐based metal‐oxide‐semiconductor field‐effect transistor (MOSFET) is the preferred semiconductor device in low to medium‐powered high‐frequency power processing applications [1–5]. This kind of transistor represents one of the major sources of power losses and heating in such applications often requiring a proper cooling system to be integrated into the static converter.…”

Section: Introductionmentioning

confidence: 99%

Switching losses prediction methods oriented to power MOSFETs – a review

Paula

Tavares

Soares

et al. 2020

IET power electron.

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Evaluation of reverse recovery characteristic of silicon carbide metal–oxide–semiconductor field‐effect transistor intrinsic diode

Cited by 30 publications

References 29 publications

Comparative Design of Gate Drivers with Short-Circuit Protection Scheme for SiC MOSFET and Si IGBT

Comparative Design of Gate Drivers with Short-Circuit Protection Scheme for SiC MOSFET and Si IGBT

Experimental Comparison of High‐Speed Gate Driver Design for 1.2‐kV/120‐A Si IGBT and SiC MOSFET Modules

Switching losses prediction methods oriented to power MOSFETs – a review

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