Experimental Comparison of High‐Speed Gate Driver Design for 1.2‐kV/120‐A Si IGBT and SiC MOSFET Modules

Yin, Shan; Tseng, King Jet; Simanjorang, Rejeki; Tu, Pengfei

doi:10.1049/iet-pel.2016.0668

Cited by 41 publications

(14 citation statements)

References 22 publications

(24 reference statements)

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“…One of the key concerns for end users of IGBT power modules is the power loss characteristics of the devices. Since the traditional silicon (Si) based devices have almost reached their upper limit of power loss optimisation, the wide bandgap (WBG) materials [4][5][6], such as silicon carbide (SiC) and gallium nitride, have been identified as promising alternatives due to their superior material properties, such as higher breakdown voltage level, higher barrier heights, higher operation temperature and higher thermal conductivity.…”

Section: Introductionmentioning

confidence: 99%

Hybrid 3.3 kV/450 A half‐bridge IGBT power module with SiC Schottky barrier diodes

Luo

Huang

et al. 2020

IET Power Electronics

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This work presents a hybrid 3.3 kV/450 A insulated-gate bipolar transistor (IGBT) power module, utilising the halfbridge topology. In contrast to the traditional fashion, each IGBT chip in this module is allocated with two anti-parallel silicon carbide (SiC) Schottky barrier diodes (SBDs). Each SBD describes smaller footprint than the conventionally used silicone (Si) based fast recovery diode at this voltage and current level. By adopting smaller SiC SBDs in this hybrid-style packaging structure, the SBD chip yield can be greatly improved, without any additional fabrication cost. To benchmark the advantages of this hybrid power module over the Si-based counterpart, both power modules are designed, fabricated as well as tested statically and dynamically. It is shown that while both types show similar thermal behaviour, the hybrid power module describes much lower IGBT turn-on current overshooting, diode reverse recovery loss and IGBT turn-on loss. Based on the measured results, the power losses of both modules under a three-phase inverter operation condition are calculated, showing that the hybrid module has considerably lower power losses and junction temperature rise.

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Section: Introductionmentioning

confidence: 99%

Hybrid 3.3 kV/450 A half‐bridge IGBT power module with SiC Schottky barrier diodes

Luo

Huang

et al. 2020

IET Power Electronics

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“…The design aspects that must be considered from the point of view of the gate driver are presented in [12][13][14], with the aim of reducing the switching time without increasing electromagnetic interference (EMI).…”

Section: Introductionmentioning

confidence: 99%

Railway traction DC–DC converter: Comparison of Si, SiC‐hybrid, and full SiC versions with 1700 V power modules

Rujas

López

Garcia-Bediaga

et al. 2019

IET Power Electronics

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The influence of the silicon carbide (SiC) technology in terms of volume, weight, efficiency, and cost in a 225 kW DC-DC railway converter is detailed in this study. Three different power modules technologies have been used: 'traditional' siliconbased power modules, SiC-hybrid modules, and the newest full-SiC power modules available in the market. An experimental comparison of the SiC-hybrid and full-SiC modules is presented, showing their switching waveforms compared with those of the original Si modules. The highest speeds obtained by the SiC technology make the use of the traditional power module packages impossible employing Si technology. Hence, the first full-SiC modules available in the market are offered in low current ratings, requiring the complete redesign of the power converter to take advantage of the capabilities of the full-SiC modules. The railway power converter under study in this work is nowadays used to regenerate the braking energy in a DC 750 V tram with some catenary-free areas. As a final result, a full-SiC version of converter is achieved.

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“…It may lead to parasitic effects including phase-leg crosstalk and electromagnetic interference (EMI) issues due to the ringings, which are where the early works mainly focused on. To summarize, the gate driver design for SiC MOSFET should follow such rules [9][10][11][12]:…”

Section: Introductionmentioning

confidence: 99%

Comparative Design of Gate Drivers with Short-Circuit Protection Scheme for SiC MOSFET and Si IGBT

Yin

Liu

et al. 2019

Energies

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Short-circuit faults are the most critical failure mechanism in power converters. Among the various short-circuit protection schemes, desaturation protection is the most mature and widely used solution. Due to the lack of gate driver integrated circuit (IC) with desaturation protection for the silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET), the conventional insulated gate bipolar transistor (IGBT) driver IC is normally used as these two devices have similar gate structure and driving mechanism. In this work, a gate driver with desaturation protection is designed for the 1.2-kV/30-A SiC MOSFET and silicon (Si) IGBT with the off-the-shelf driver IC. To further limit voltage-overshoot at the rapid turn-off transient, the active clamping circuit is introduced. Based on the experiments of switching characterization and short-circuit test, the SiC MOSFET shows faster switching speed, more serious electromagnetic interference (EMI) issue, lower switching loss (half), and higher short-circuit current (1.6 times) than the Si IGBT, even with a slower gate driver. Thus, a rapid response speed is required for the desaturation protection circuit of SiC MOSFET. Due to the long delay time of the existing desaturation protection scheme, it is technically difficult to design a sub- μ s protection circuit. In this work, an external current source is proposed to charge the blanking capacitor. A short-circuit time of 0.91 μ s is achieved with a reliable protection. Additionally, the peak current is reduced by 22%.

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Experimental Comparison of High‐Speed Gate Driver Design for 1.2‐kV/120‐A Si IGBT and SiC MOSFET Modules

Cited by 41 publications

References 22 publications

Hybrid 3.3 kV/450 A half‐bridge IGBT power module with SiC Schottky barrier diodes

Hybrid 3.3 kV/450 A half‐bridge IGBT power module with SiC Schottky barrier diodes

Railway traction DC–DC converter: Comparison of Si, SiC‐hybrid, and full SiC versions with 1700 V power modules

Comparative Design of Gate Drivers with Short-Circuit Protection Scheme for SiC MOSFET and Si IGBT

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