Evaluation of LPCVD SiN_{<italic>x</italic>} Gate Dielectric Reliability by TDDB Measurement in Si-Substrate-Based AlGaN/GaN MIS-HEMT

Record-Low Thermal Boundary Resistance between Diamond and GaN-on-SiC for Enabling Radiofrequency Device Cooling

“…Additionally, the interface between Si 3 N 4 and GaN is more pristine than that observed in other methods due to the in situ growth. Also, MOCVD and LPCVD Si 3 N 4 have shown higher dielectric strengths than PECVD, which is another indication of a higher-quality dielectric layer. − This high quality of MOCVD Si 3 N 4 enables us to use it as a gate dielectric for GaN-based devices. , It is evident that this high-quality bulk film and pristine interface helps in reducing the TBR even further. Our measured TBR which was significantly low due to the atomically smooth interface allows phonon transport from the hot spot in the GaN channel to the diamond layer with minimum possible scattering and discontinuity in the temperature profile.…”

A Comprehensive Review of Recent Progress on GaN High Electron Mobility Transistors: Devices, Fabrication and Reliability

“…We have also studied the dielectric failure based on the time dependent dielectric breakdown (TDDB) measurement at different temperatures with statistical Weibull analysis [24]. The lifetime of the devices with 35-nm-thick LPCVD SiN x gate dielectric was predicted to have a 10-year time-to-breakdown.…”

“…GaN-based HEMTs on silicon substrate are particularly appealing to the IC industry due to its compatibility with the industry-matured Si-CMOS IC technologies. Tremendous research and development work has been conducted and reported in the recent years with significant progresses on GaN-on-Si HEMTs covering the full scope of a new IC-chain, including the industrial acceptable-low defect quality of GaN-on-Si epitaxial materials, the optimized GaN-based HEMT devices and integration [11][12][13][14][15][16][17], the significantly enhanced reliability [18][19][20][21][22][23][24], the comprehensive circuit and device modeling [25][26][27] and the product designs [19,[28][29][30][31][32][33][34].…”

Analysis of Silicon Carbide Polymorphs Substrates Effect on Performances of AlGaN/GaN Double Quantum Well HEMTs

“…Schematic cross-sections of the AlGaN/AlN/GaN/AlGaN/GaN DC-HEMT structure with silicon carbide polymorphs substrates including 6H-SiC, 3C-SiC and 4H-SiC are shown in Figure. 2.For more details about working principles and advantages of HEMT with the help of band diagrams can be found in (Cornigli, et al, 2015;Ishida, et al, 2016;Zhang, et al, 2016;Koller, et al, 2017;Hashizume, et al, 2018;Kim, et al, 2018;Qi, et al, 2018). The dimensions of the structures are as follows: 1 µm of gate length, 1µm of gate width, source-gate spacing Lsg = 1µm, gate-drain spacing Lgd = 1µm, 1 µm of source length, 1 µm of drain length, 2 µm of SiC silicon carbide polymorphs substrate thickness, 0.5 µm of GaN undoped minor channel and buffer layer thickness, 21 nm of AlGaN undoped back barrier layer thickness, 14 nm of GaN undoped major channel thickness, 2 nm of Al0.3Ga0.7N thickness and, 1 nm of AlN undoped spacer layer thickness, 12 nm of doped carrier supplier layer thickness, 3nm of undoped cap layer thickness and 5.1 eV of gate Schottky contact work function.…”

“…In the recent years, a lot of research work has been carried out to study the GaN HEMTs including the optimization of GaN-based HEMT devices and integration (Stoffels, et al, 2015;Zhang, et al, 2016;Wang, et al, 2017;Hashizume, et al, 2018;Kim, et al, 2018), the enhancement of reliability (Koller, et al, 2017;Meneghini, et al, 2017;Qi, et al, 2018), the comprehensive device modeling (Raciti, et al, 2014;Radhakrishna, et al, 2015;Cornigli, et al, 2015) and the commercialization designs (Di Cioccio, et al, 2015;Then, et al, 2015;Ishida, et al, 2016;Lidow, et al, 2016). In addition, the development works have been conducted and reported on microwave noise performance of GaN HEMT.…”