Evaluation of bandgap energy and carrier density of InN nanocolumns

Fukunaga, Kohji; Kouyama, Kazuaki; Hashimoto, M.; Kamimura, Jumpei; Kunugita, Hideyuki; Ema, Kazuhiro; Kikuchi, Akihiko; Kishino, Katsumi

doi:10.1016/j.jlumin.2009.04.101

Cited by 4 publications

(12 citation statements)

References 11 publications

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“…Uniform arrays of InGaN/GaN nanocolumns are fabricated by rf-plasma-assisted molecular beam epitaxy (rf-MBE) with the Ti-mask selective-area growth technique [7][8][9][10]. Micro-PL spectroscopy is performed on densely integrated nanocolumns with lattice constant of 200 nm at 20 K. The excitation laser wavelength is 390 nm.…”

Section: Resultsmentioning

confidence: 99%

“…Both uniform arrays of InGaN/GaN nanocolumns and individual single nanocolumns were fabricated by rfplasma-assisted molecular beam epitaxy (rf-MBE) with the Ti-mask selective-area growth technique. [15][16][17][18][19][20] A 5 nm Ti layer was evaporated on a GaN template. Using electron beam lithography and Ar dry etching techniques, hole patterns, which control the nanocolumn diameter, were formed.…”

Section: Experimental Methodsmentioning

confidence: 99%

“…We propose GaN-based nanocolumns as promising platform for the large-scale integration. The nanocolumns, which are selectively-formed one-dimensional columnar nanocrystals, have been intensively studied toward light emitting diode (LED) applications because of highly tunable emission energy in the range of 400-1800 nm and high luminous efficiency especially in the green to red emission region [7,8,9]. Monolithic integration of LEDs with 150µm x150µm area, which consists of regularly arranged nanocolumns in a triangular lattice of 400 nm lattice constant has been reported in 2012 [10].…”

Section: Introductionmentioning

confidence: 99%

“…Nanocolumns are selectively formed one-dimensional columnar nitride nanocrystals, and have been intensively studied for light emitting diode (LED) applications because of their highly tunable emission energy in the range of 400-1800 nm, and high luminous efficiency, especially in the green-to-red emission region. [15][16][17][18][19][20] Regularly arranged nanocolumns in a triangular lattice with a 400 nm lattice constant were reported in 2012, and a monolithic integration of LEDs with an area of 150 © 150 µm 2 was realized. 18) Larger-scale integration has been proceeding with the aim of producing brighter LEDs.…”

Section: Introductionmentioning

confidence: 99%

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Single InGaN nanocolumn spectroscopy

Sekine¹,

Onoue²,

Yoshiike³

et al. 2015

Jpn. J. Appl. Phys.

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We report on spectroscopy of single InGaN/GaN nanocolumns, which are site-controlled nanostructures allowing for pixel-like large-scale integration. A single nanocolumn shows a narrow photoluminescence around 600 nm at 20K, the linewidth of which ranges between 0.1 and 10 meV. Single nanocolumns show distinct photoluminescence even at 90K. We also observe an interesting temperature dependence of the integrated intensity having its maximum at 70 K, which suggests efficient carrier injection into the localized states. The results suggest that the nanocolumns provide a promising platform for large-scale integration of single photon emitters and future integration of qubits.

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Section: Resultsmentioning

confidence: 99%

Section: Experimental Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Single InGaN nanocolumn spectroscopy

Sekine¹,

Onoue²,

Yoshiike³

et al. 2015

Jpn. J. Appl. Phys.

Self Cite

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show abstract

“…Nanocolumns are selectively formed one-dimensional columnar nitride nanocrystals, and have been intensively studied for light-emitting diode (LED) applications because of their highly tunable emission energy in the range of 400-1800 nm [1][2][3][4][5][6][7][8] and their high-density large-scale integration capability. Regularly arranged nanocolumns in a triangular lattice with a 300 nm lattice constant were reported in 2014, 7) and a monolithic integration of LEDs with an area of 150 × 150 µm 2 was realized.…”

Section: Introductionmentioning

confidence: 99%

Photon correlation study of background suppressed single InGaN nanocolumns

Yamamoto

Maekawa

Imanishi

et al. 2016

Jpn. J. Appl. Phys.

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We report on a linearly polarized non-classical light emission from a single InGaN/GaN nanocolumn, which is a site-controlled nanostructure allowing for pixel-like large-scale integration. We have developed a shadow mask technique to reduce background emissions arising from nitride deposits around single nanocolumns and defect states of GaN. The signal to background ratio is improved from to , which allows for detailed polarization-dependent measurement and photon-correlation measurements. Polarization-dependent measurements show that linearly polarized emissions arise from excitonic recombination involving a heavy-hole-like electronic state, corresponding to the bulk exciton of an in-plane polarized A exciton. The second-order coherence function at time zero g (2)(0) is 0.52 at 20 K without background correction. This value is explained in terms of a statistical mixture of a single-photon emission with residual weak background emissions, as well as efficient carrier injection from other localized states.

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InN Nanowires

Zhao

2017

Semiconductors and Semimetals

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Evaluation of bandgap energy and carrier density of InN nanocolumns

Cited by 4 publications

References 11 publications

Single InGaN nanocolumn spectroscopy

Single InGaN nanocolumn spectroscopy

Photon correlation study of background suppressed single InGaN nanocolumns

InN Nanowires

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