We report on spectroscopy of single InGaN/GaN nanocolumns, which are site-controlled nanostructures allowing for pixel-like large-scale integration. A single nanocolumn shows a narrow photoluminescence around 600 nm at 20K, the linewidth of which ranges between 0.1 and 10 meV. Single nanocolumns show distinct photoluminescence even at 90K. We also observe an interesting temperature dependence of the integrated intensity having its maximum at 70 K, which suggests efficient carrier injection into the localized states. The results suggest that the nanocolumns provide a promising platform for large-scale integration of single photon emitters and future integration of qubits.
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