EUV time-resolved studies on carbon growth and cleaning

Mertens, Bas; Wolschrijn, B. T.; Jansen, R.; Koster, N.B.; Weiß, Markus; Wedowski, Marco; Klein, R.; Böck, Thomas; Thornagel, R.

doi:10.1117/12.504542

Cited by 15 publications

(10 citation statements)

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“…However, oxidation and carbon formation on the mirror are primarily caused by the dissociation of absorbed hydrocarbons, and need to be controlled. Although deposited carbon can be cleaned using atomic oxygen or hydrogen [66][67][68][69], more data on continuous high-power operation is needed for accurate evaluation of the stability and degradation of EUV optics. For a 10-mirror system, the total reflectance loss should be less than 10%, i.e., a single multilayer mirror should lose less than 1% reflectivity over its lifetime.…”

Section: Opticsmentioning

confidence: 99%

Next-generation lithography for 22 and 16 nm technology nodes and beyond

2011

Sci. China Inf. Sci.

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In this paper, next-generation lithography (NGL) for the 22 and 16 nm technology nodes and beyond is reviewed. A broad range of topics, including history, technologies, critical challenges, and the most plausible candidates are discussed. The 22 and 16 nm technology nodes rely on NGL. NGLs have been extensively studied. Because of technological issues, the semiconductor industry has stopped pursuing several NGLs, such as X-ray proximity lithography, ion projection lithography, and scattering with angular limitation projection electron lithography. Currently, the primary candidate technologies are extreme ultraviolet lithography (EUVL), maskless lithography (ML2), and nanoimprint lithography (NIL), with EUVL being the leading candidate. Since EUVL was first proposed in 1988, many studies have been conducted. Currently, there is no "show stopper" for EUVL. Moreover, challenges are present in almost all aspects of EUVL technology. Almost all primary semiconductor manufacturing companies plan to implement commercial pre-production step-and-scan exposure tools in 2011. However, EUVL power at an intermediate focusing level has not yet met the volume manufacturing requirements. EUVL resists have been significantly improved recently, but there is still a critical need to meet requirements on resolution, line width roughness, and sensitivity. Creating a defect-free EUVL mask is another obstacle to the application of EUVL. ML2 and NIL, like EUVL, have also undergone significant progress recently, but throughput, defect control, and cost remain the critical impediments for practical application.

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Section: Opticsmentioning

confidence: 99%

Next-generation lithography for 22 and 16 nm technology nodes and beyond

2011

Sci. China Inf. Sci.

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“…All those materials need to be characterized for their optical properties with respect to their behavior in lithography for optical measurements in process control. Material for the EUV optical systems must also be validated for their endurance under EUV exposure [7]. PTB has established a suite of instrumentation and experience to measure the data required to answer these questions.…”

Section: Introductionmentioning

confidence: 99%

Update on EUV radiometry at PTB

Laubis

Barboutis

Buchholz

et al. 2016

Extreme Ultraviolet (EUV) Lithography VII

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The development of technology infrastructure for EUV Lithography (EUVL) still requires higher levels of technology readiness in many fields. A large number of new materials will need to be introduced. For example, development of EUV compatible pellicles to adopt an approved method from optical lithography for EUVL needs completely new thin membranes which have not been available before. To support these developments, PTB with its decades of experience [1] in EUV metrology [2] provides a wide range of actinic and non actinic measurements at in-band EUV wavelengths as well as out of band. Two dedicated, complimentary EUV beamlines [3] are available for radiometric [4,5] characterizations benefiting from small divergence or from adjustable spot size respectively. The wavelength range covered reaches from below 1 nm to 45 nm [6] for the EUV beamlines [5] to longer wavelengths if in addition the VUV beamline is employed. The standard spot size is 1 mm by 1 mm with an option to go as low as 0.1 mm to 0.1 mm. A separate beamline offers an exposure setup. Exposure power levels of 20 W/cm 2 have been employed in the past, lower fluencies are available by attenuation or out of focus exposure. Owing to a differential pumping stage, the sample can be held under defined gas conditions during exposure. We present an updated overview on our instrumentation and analysis capabilities for EUV metrology and provide data for illustration.

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“…Surface oxidation on the mirror is especially important because it is an irreversible phenomenon; however, carbon deposition on the mirror can be removed by UV irradiation. 1 When the envisioned irradiation beams with the highest intensity of about 0.45 mW/mm 2 are in commercial use, it will take more than one month to observe a few percentage points of reflectance loss for Mo/Si MLM. 2 The relative reflectance changes of the mirrors are required to remain at less than 1 % for 30,000 hours; as a result, the envisioned irradiation beams are too weak to evaluate such mirrors under a large variety of conditions.…”

Section: Introductionmentioning

confidence: 99%

Reflectance change of Si- and Ru-capped Mo/Si multilayer mirrors caused by intense EUV irradiation

Kakutani

Niibe

Takase³

et al. 2005

SPIE Proceedings

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An EUV irradiation and reflectance measurement system using intense EUV radiation emitted from a long undulator at the NewSUBARU synchrotron radiation (SR) facility was developed. The system can measure the real-time reflectance drop during intense EUV irradiation and reflectance mapping as well as the photoemission current after irradiation at a fixed energy for atom absorption. The irradiated EUV beam was very intense, and the power density was about 400 mW/mm 2 . The reflectances of Si-and Ru-capped Mo/Si multilayer mirrors (MLMs) were measured under several conditions of EUV power, i.e., 120, 15, and 5 mW/mm 2 for Si-capped MLMs, or of water vapor, i.e., 6.6×10 5 and 1.3×10 2 Pa for Ru-capped MLMs. Each reflectance was reduced as the dose was increased. The reflectance was significantly reduced at the higher partial pressure of water vapor. When the intensity of the beam flux was reduced using ND filters, the reflectance was significantly reduced under the same conditions of atmosphere and dose. Carbon cleaning and oxidation were progressed in the beam center although carbon deposition was much progressed in the beam fringe for Si-capped MLM. Ru-capped MLM was more resistant to radiation damage than Si-capped MLM at each partial pressure of water vapor. The results of X-ray photoelectron spectroscopy (XPS) for Ru-capped MLM showed that deposited and desorbed carbons were balanced at the beam center and carbon deposition occurred on the fringe of the beam.

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EUV time-resolved studies on carbon growth and cleaning

Cited by 15 publications

References 0 publications

Next-generation lithography for 22 and 16 nm technology nodes and beyond

Next-generation lithography for 22 and 16 nm technology nodes and beyond

Update on EUV radiometry at PTB

Reflectance change of Si- and Ru-capped Mo/Si multilayer mirrors caused by intense EUV irradiation

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