EUV telecentricity and shadowing errors impact on process margins

Civay, Deniz; Hosler, Erik R.; Chauhan, Vikrant; Neogi, Tuhin Guha; Smith, Lee; Pritchard, D J

doi:10.1117/12.2087639

Cited by 5 publications

(5 citation statements)

References 11 publications

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“…[5] Here, the TS-CA-M0 interconnect construct is evaluated qualitatively for device performance with respect to overlap area; therefore, it is critical that the overlap area between TS, CA and M0 be maximized to ensure optimal device performance. The overlap area of CA with the line above and below for the drawn structures is evaluated for all three levels simultaneously, neglecting any sidewall angle taper of the contact since this would necessitate an incorporation of a full resist model into the lithography simulations.…”

Section: Monte Carlo Methodology Summarymentioning

confidence: 99%

“…For contacts, pattern-placement error becomes important as a result of the varying pattern density. [5] The CA contacts align to the TS layer below and the M1 layer above which makes quantifying the impact of pattern shift critical in assessing NA 0.33 EUV print as a viable lithographic pattern technique while ensuring device functionality. While the pitch and CD of the CA contact layer is aggressive for NA 0.33, the simulated aerial images are able to resolve the pattern for the AOI unit cell; however, as stated previously this does not include a resist model.…”

Section: Ca: Euvmentioning

confidence: 99%

“…[5] Simulating the expected PPE for a given device layout is necessary to determine the amount of systematic error which can be corrected as well as the uncorrectable error. Here, HyperLith™ is utilized to determine these placement errors for a given mask layout.…”

Section: Euv Lithographymentioning

confidence: 99%

“…In previous work, TFE and PPE were shown to be minimized with the implementation of high-NA EUV (0.52) so long as key critical dimensions were aligned with the 8x scanning direction (4x puts the highest demand on CD and registration) of the anamorphic 4x by 8x mask to be utilized in high-NA EUV lithography. [5] HyperLith™ is used to simulate the aerial images for each of the three layers (TS-CA-M0), exploring the same two pupil fills as for the SAQP + EUV cut patterning strategy. For this increased NA, the HyperLith™ input is updated to reflect both the increased NA as well as an anamorphic mask, otherwise, the input parameters remain unchanged from the NA 0.33 simulations.…”

Section: Ts Ca and M0: High-namentioning

confidence: 99%

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EUV and optical lithographic pattern shift at the 5nm node

Hosler

Thiruvengadam

Cantone

et al. 2016

Extreme Ultraviolet (EUV) Lithography VII

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At the 5 nm technology node there are competing strategies for patterning: high-NA EUV, double patterning 0.33 NA EUV and a combination of optical self-aligned solutions with EUV. This paper investigates the impact of pattern shift based on the selected patterning strategy. A logic standard cell connection between TS and M0 is simulated to determine the impact of lithographic pattern shift on the overlay budget. At 5 nm node dimensions, high-NA EUV is necessary to expose the most critical layers with a single lithography exposure. The impact of high-NA EUV lithography is illustrated by comparing the pattern shift resulting from 0.33 NA vs. 0.5x NA. For the example 5 nm transistor, cost-beneficial lithography layers are patterned with EUV and the other layers are patterned optically. Both EUV and optical lithography simulations are performed to determine the maximum net pattern shift. Here, lithographic pattern shift is quantified in terms of through-focus error as well as pattern-placement error. The overlay error associated with a hybrid optical/selfaligned and EUV cut patterning scheme is compared with the results of an all EUV solution, providing an assessment of two potential patterning solutions and their impact the overall overlay budget.

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Section: Monte Carlo Methodology Summarymentioning

confidence: 99%

Section: Ca: Euvmentioning

confidence: 99%

Section: Euv Lithographymentioning

confidence: 99%

Section: Ts Ca and M0: High-namentioning

confidence: 99%

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EUV and optical lithographic pattern shift at the 5nm node

Hosler

Thiruvengadam

Cantone

et al. 2016

Extreme Ultraviolet (EUV) Lithography VII

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show abstract

“…In a high NA system, when using PSM coated Ru/Si multilayer, as the placement error and focus shift range decrease, the process margin increases, and mask 3D effect is expected to be reduced. 33,34) 3.2. Comparison of NILS and DOF of Ru/Si multilayer by number of layers Thus far, we chose the number of layers of the multilayer structure as 80.…”

Section: Optimal Ru/si Multilayer Developmentmentioning

confidence: 99%

Optimal phase shift mask and multilayer stack with the evaluation of imaging performance and process latitude in extreme ultraviolet high numerical aperture

Kang¹,

Park²,

Ban³

et al. 2021

Jpn. J. Appl. Phys.

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In high numerical aperture (NA) extreme ultraviolet lithography, which is used to implement a finer linewidth of 10 nm or lower, serious problems arise in patterning as the NA increases. To alleviate such problems, a thin absorber and a multilayer with good reflective efficiency and improved pattern quality are required. To develop an effective EUV photomask for the commercialization of high-NA systems, we determined the optimal ruthenium (Ru)/silicon (Si) multilayer structure using a phase-shift mask (PSM) absorber. A Ru/Si multilayer d R u = 2.2 nm , d S i = 4.7 nm using PSM as an absorber has a smaller best-focus range and placement error compared to the molybdenum (Mo)/silicon (Si) multilayer. At the same time, it provides improved image contrast, enabling more stable patterning. Even when the number of layers of the Ru/Si multilayer was reduced, it was confirmed that the reflectance efficiency and image quality were maintained.

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Mask Materials and Designs for Extreme Ultra Violet Lithography

Kim

Ahn

2018

Electron. Mater. Lett.

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EUV telecentricity and shadowing errors impact on process margins

Cited by 5 publications

References 11 publications

EUV and optical lithographic pattern shift at the 5nm node

EUV and optical lithographic pattern shift at the 5nm node

Optimal phase shift mask and multilayer stack with the evaluation of imaging performance and process latitude in extreme ultraviolet high numerical aperture

Mask Materials and Designs for Extreme Ultra Violet Lithography

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