“…Selective-area growth refers to growth only within the holes, while avoiding growth on the mask, such as titanium (Ti) [ 21 , 22 ], silicon nitride ( [ 23 , 24 ], and silicon dioxide ( ) [ 25 , 26 ]. Many patterning methods have been developed to form microscale patterns, such as silica nanosphere patterning [ 27 ], porous anodic alumina (PAA) patterning [ 28 ], electron beam lithography (EBL) [ 29 , 30 ], nanoimprint [ 29 , 31 ], and photolithography [ 32 , 33 ].…”