EUV photolithography: resist progress and challenges

Ober, Christopher K.; Xu, Hong; Kosma, Vasiliki; Sakai, Kazunori; Giannelis, Emmanuel P.

doi:10.1117/12.2302759

Cited by 14 publications

(9 citation statements)

References 4 publications

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“…Under optimized surface-dependent conditions, DNA tiles can assemble into large, porous, 2D crystalline patterns with different geometries on various substrates. The feature sizes of the DNA tiles are as small as 2–4 nm, which are generally much smaller than those of DNA origami structures and those from photolithography. , Moreover, the tile-based DNA self-assembly allows large-scale surface masking with tunable design and low cost. Figure illustrates the overall process.…”

Section: Results and Discussionmentioning

confidence: 99%

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Molecular Lithography on Silicon Wafers Guided by Porous, Extended Arrays of Small DNA Tiles

et al. 2023

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Tile-based DNA self-assembly is a cost-effective fabrication method for large-scale nanopatterns. Herein, we report a protocol to directly assemble DNA 2D arrays on silicon wafers and then use the DNA nanostructures as molds to fabricate the corresponding nanostructures on the silicon wafers by hydrogen fluoride (HF) etching. Similar HF etching has been used with robust large DNA origami structures as templates. This work demonstrates that DNA nanostructures assembled from small tiles are sufficiently stable for this process. The resulting feature size (∼8.6 nm) approaches the sizes of e-beam lithography. While the reported method is parallel and inexpensive, e-beam lithography is a serial method and is expensive. We expect that this method will be very useful for preparing fine nanopatterns in large areas.

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Section: Results and Discussionmentioning

confidence: 99%

“…The feature sizes of the DNA tiles are as small as 2−4 nm, which are generally much smaller than those of DNA origami structures and those from photolithography. 36,37 Moreover, the tile-based DNA self-assembly allows large-scale surface masking with tunable design and low cost. Figure 1 illustrates the overall process.…”

Section: Resultsmentioning

confidence: 99%

Molecular Lithography on Silicon Wafers Guided by Porous, Extended Arrays of Small DNA Tiles

et al. 2023

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“…Selective-area growth refers to growth only within the holes, while avoiding growth on the mask, such as titanium (Ti) [ 21 , 22 ], silicon nitride (

[ 23 , 24 ], and silicon dioxide (

) [ 25 , 26 ]. Many patterning methods have been developed to form microscale patterns, such as silica nanosphere patterning [ 27 ], porous anodic alumina (PAA) patterning [ 28 ], electron beam lithography (EBL) [ 29 , 30 ], nanoimprint [ 29 , 31 ], and photolithography [ 32 , 33 ].…”

Section: Introductionmentioning

confidence: 99%

Selective-Area Growth Mechanism of GaN Microrods on a Plateau Patterned Substrate

et al. 2023

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This study provides experimental evidence regarding the mechanism of gallium nitride (GaN) selective-area growth (SAG) on a polished plateau-patterned sapphire substrate (PP-PSS), on which aluminum nitride (AlN) buffer layers are deposited under the same deposition conditions. The SAG of GaN was only observed on the plateau region of the PP-PSS, irrespective of the number of growth cycles. Indirect samples deposited on the bare c-plane substrate were prepared to determine the difference between the AlN buffer layers in the plateau region and silicon oxide (SiO2). The AlN buffer layer in the plateau region exhibited a higher surface energy, and its crystal orientation is indicated by AlN [001]. In contrast, regions other than the plateau region did not exhibit crystallinity and presented lower surface energies. The direct analysis results of PP-PSS using transmission electron microscopy (TEM) and electron backscattered diffraction (EBSD) are similar to the results of the indirect samples. Therefore, under the same conditions, the GaN SAG of the deposited layer is related to crystallinity, crystal orientation, and surface energy.

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“…1–5 The motivation is mainly the demand for higher transistor density, and by moving from the traditional 193 nm deep ultraviolet lithography (DUVL) to the 13.5 nm EUVL, significant improvement in resolution may be achieved. 6–9 However, producing and handling light of this short wavelength is technically very challenging and the instrumentation associated with the EUVL manufacturing tools is very demanding and complex. 10 Furthermore, limitations in resolution are also difficult to overcome without replacing the current photoresists with such that are optimized to perform at this short wavelength.…”

Section: Introductionmentioning

confidence: 99%

Low-energy electron interaction with 2-(trifluoromethyl)acrylic acid, a potential component for EUVL resist material

Tafrishi

Torres-Díaz

Amiaud

et al. 2023

Phys. Chem. Chem. Phys.

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EUV photolithography: resist progress and challenges

Cited by 14 publications

References 4 publications

Molecular Lithography on Silicon Wafers Guided by Porous, Extended Arrays of Small DNA Tiles

Molecular Lithography on Silicon Wafers Guided by Porous, Extended Arrays of Small DNA Tiles

Selective-Area Growth Mechanism of GaN Microrods on a Plateau Patterned Substrate

Low-energy electron interaction with 2-(trifluoromethyl)acrylic acid, a potential component for EUVL resist material

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