Low-energy electron interaction with 2-(trifluoromethyl)acrylic acid, a potential component for EUVL resist material

Tafrishi, Reza; Torres-Díaz, Daniela; Amiaud, L.; Lafosse, A.; Ingólfsson, Oddur

doi:10.1039/d3cp01860a

Phys. Chem. Chem. Phys.

2023

DOI: 10.1039/d3cp01860a

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Low-energy electron interaction with 2-(trifluoromethyl)acrylic acid, a potential component for EUVL resist material

Reza Tafrishi

Daniela Torres-Díaz

L. Amiaud

et al.

Abstract: Motivated by the current introduction of extreme ultraviolet lithography (EUVL) into chip manufacturing processes, and thus the transition to electron-induced chemistry within the respective resist materials, we have studied low...

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2024

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Dissociative photoionization of phenyl triflate, a photoacid generator for photolithography, at 92 eV

Laffert,

Sajjadian,

Richter

et al. 2024

The Journal of Chemical Physics

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The dissociative photoionization of phenyl triflate (C6H5OSO2CF3), a neutral photoacid generator used in photolithography, was investigated in a gas phase experiment employing extreme ultraviolet (EUV) synchrotron radiation at 92 eV and photoelectron–photoion coincidence detection. The interaction of EUV photons with the molecule leads almost exclusively to dissociation, which is dominated by a sequential fragmentation mechanism, in which SO2, CF3, CO, and C2H2 are lost. For lithographic purposes, the lack of the observation of a fragment that could serve as a precursor for the formation of triflic acid means that the effective photoacid generator concentration in a photoresist is reduced, impacting its patterning performance in EUV lithography. A better understanding of the dissociative photoionization of photoresist components and proxies thereof can provide a crucial handle that guides the design of photoresists for the upcoming technology nodes with ever decreasing feature sizes for more powerful computer chips.

show abstract

Dissociative photoionization of phenyl triflate, a photoacid generator for photolithography, at 92 eV

Laffert,

Sajjadian,

Richter

et al. 2024

The Journal of Chemical Physics

View full text Add to dashboard Cite

show abstract

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Low-energy electron interaction with 2-(trifluoromethyl)acrylic acid, a potential component for EUVL resist material

Abstract: Motivated by the current introduction of extreme ultraviolet lithography (EUVL) into chip manufacturing processes, and thus the transition to electron-induced chemistry within the respective resist materials, we have studied low...

Cited by 1 publication

References 77 publications

Dissociative photoionization of phenyl triflate, a photoacid generator for photolithography, at 92 eV

Dissociative photoionization of phenyl triflate, a photoacid generator for photolithography, at 92 eV

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