EUV mask process development and integration

Zhang, Guojing; Yan, Pei-yang; Liang, Ted; Du, Yongkun; Sanchez, Peter; Park, Seh-Jin; Lanzendorf, E. J.; Choi, Chul Jin; Shu, Emily Y.; Stivers, Alan R.; Farnsworth, Jeff N.; Hsia, Kangmin; Chandhok, Manish; Leeson, Michael J.; Vandentop, Gilroy

doi:10.1117/12.681839

Cited by 10 publications

(5 citation statements)

References 14 publications

(8 reference statements)

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“…Effects of mask topography and materials have to be considered in selecting best candidates for EUV mask patterning technology. These efforts had great progress in last few years [3] [4] .…”

Section: Introductionmentioning

confidence: 99%

EUV simulation extension study for mask shadowing effect and its correction

Kang¹,

Hansen²,

Schoot

et al. 2008

SPIE Proceedings

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It is well known from 193nm simulation studies that accounting for the electromagnetic (EM) interaction between the incident light and the mask become more important as the mask geometry shrinks. In particular this transition occurs when the size of the mask pattern becomes comparable to the wavelength of light.Early simulation work in EUV lithography indicated rigorous EM calculations are required to predict the subtle effects associated with the mask absorber shadowing effect. These calculations generally show that non-normal mask incidence creates several problems, including HV-bias, slit position dependent bias, and slit position dependent pattern shift. These results are surprising because the mask sizes studied are much larger than the 13.5nm wavelength. If approximate methods could be used rather than the rigorous EM calculations then EUV simulations would be much faster and more accessible.In this study, rigorous EM simulation results are compared with a Kirchoff approximation. The results show that Kirchoff simulations can mimic the shadowing effect with a simple mask bias. It is also found that the pattern shift effect is an artifact caused by a misinterpretation of the rigorous simulation results. With proper biasing depending on the pattern orientation and field position, simple Kirchoff simulation can be used. Thus Any MBOPC tool currently available can handle EUV proximity correction with minor modifications.

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Section: Introductionmentioning

confidence: 99%

EUV simulation extension study for mask shadowing effect and its correction

Kang¹,

Hansen²,

Schoot

et al. 2008

SPIE Proceedings

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“…Vandentop covered four topics concerning the status of EUV masks at Intel. [6][7][8] (1) Mask fabrication pilot line process: 6 The pilot line keeps the baseline process on track. Its 87-nm-thick TaN absorber layer and anti-reflection coating showed good performance.…”

Section: "Intel Euv Mask Status" By Gilroy Vandentop Of Intelmentioning

confidence: 99%

PMJ 2006 panel discussion review: mask technologies for EUVL

Sugawara

Sano

2006

SPIE Proceedings

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This is a report on a panel discussion in Photomask Japan held on April 19, 2006. We discussed mask technologies for extreme ultraviolet lithography (EUVL). Seven panelists presented their views on critical issues in the production of practical EUV masks. The wrap-up is as follows: A local polishing method has yielded an average flatness of 70 nm, but it increases both surface roughness and defect density. Regarding defect density, the large gap between the target and the one expected from the learning curve led to the proposal of realistic (i.e., relaxed) specifications for flatness and defect density. The capability of detecting defects with a PSL equivalent size of 25 nm or less remains an issue. It was also suggested that the local slope of the back surface of blanks (masks) should be standardized. Mask patterning has already been demonstrated to be sufficient for the 32-nm half pitch node. Captive and commercial mask shops are ready to provide masks for full-field exposure tools. Regarding handling and shipping, dual-pod type carriers and robotic handling have been demonstrated to adequately protect masks from particle contamination. Finally, a 3-point support method in EB writing was examined in conjunction with a new EB correction scheme.

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“…7,8 Such a standard EUV mask is composed of an antireflective coating layer, an absorber layer, a buffer layer, a capping layer, a Mo/Si ML, and a substrate and backside conductive layer. 4,9 Therefore, the scattering effects of such complex structures require careful simulations before the lithography process.…”

Section: Introductionmentioning

confidence: 99%

“…Reflectivites higher than 70% can be achieved at λ = 13.5 nm by using a 40 molybdenum/silicon (Mo/Si) multilayer (ML) mirror to reflect EUV light. [2][3][4] There are several ways to generate the EUV light, and two main methods are discharged produced plasma and laser produced plasma. 5 The bandwidth of a tin-plasma-based EUV source is 6 about 0.8 nm with its center at λ = 13.5 nm.…”

Section: Introductionmentioning

confidence: 99%

Efficient scattering simulations for equivalent extreme ultraviolet mask multilayer structures by modified transmission line theory and finite-difference time-domain method

Lee

2010

J. Micro/Nanolith. MEMS MOEMS

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The modified transmission line theory is used to calculate equivalent refractive indices of the extreme ultraviolet (EUV) mask multilayer (ML) over wavelengths from 13.35 to 13.65 nm for finite-difference time-domain (FDTD) simulation. Generally speaking, a fine mesh requiring huge memory and computation time are necessary to get accurate results in an FDTD simulation. However, it is hard to get accurate results for ML simulation due to the thin thickness of each layer. By means of an equivalent refractive index, the ML can be treated as one layer with the bulk effective material. Using FDTD simulations, we study the reflectivities of 40 Mo/Si ML and bulk material cases. The ML structure and bulk material with periodic excessive surface roughness as well as patterned with periodic contact holes are also studied by using two-and three-dimensional FDTD simulations. The simulation cases for a single wavelength and for a full-bandwidth EUV light source with a 6 ML system are studied. The results from each simulation show that the root mean square error between ML simulations and the bulk material simulations are confined within 3.3%, and all cases indicate that the FDTD computation time of bulk material is about half as compared with a 40-ML simulation. C 2010 Society of Photo-Optical Instrumentation Engineers.

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EUV mask process development and integration

Cited by 10 publications

References 14 publications

EUV simulation extension study for mask shadowing effect and its correction

EUV simulation extension study for mask shadowing effect and its correction

PMJ 2006 panel discussion review: mask technologies for EUVL

Efficient scattering simulations for equivalent extreme ultraviolet mask multilayer structures by modified transmission line theory and finite-difference time-domain method

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