EUV mask particle adders during scanner exposure

Hyun, Yoonsuk; Kim, Kyuyoung; Koo, Sunyoung; Kim, Seo-Min; Kim, Young‐Sik; Lim, Chang-Moon; Kwak, Noh-Jung

doi:10.1117/12.2085626

Cited by 4 publications

(2 citation statements)

References 4 publications

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“…Defects can be generated by errors in the absorber pattern ( fig. 2A), by fall-on particles 12 ( fig. 2C) or by alterations in the substrate (fig.…”

Section: Euv Photomasks Defect Inspectionmentioning

confidence: 99%

Lensless metrology for semiconductor lithography at EUV

Mochi

Kazazis

Tseng

et al. 2019

Modeling Aspects in Optical Metrology VII

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The production of modern semiconductor devices is based on photolithography, a process through which a pattern engraved on a mask is projected on a silicon wafer coated with a photosensitive material. In the past few decades, continuous technological progress in this field allowed the industry to follow Moore's law by reducing the size of the printed features. This was achieved by progressively increasing the numerical aperture of the projection system and reducing the wavelength. The latest lithography platforms for semiconductor manufacturing employ Extreme Ultra Violet (EUV) light at a wavelength of 13.5 nm. The metrology for the optics and the components of such platforms is not fully mature yet. Specifically, the inspection of the EUV photomask is still an open issue as no commercial solutions are currently available. Here we describe a lensless approach to this problem, based on coherent diffraction imaging at EUV that overcomes the main technological issues linked to the conventional mask inspection approach.

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“…Defects can be generated by errors in the absorber pattern ( fig. 2A), by fall-on particles 12 ( fig. 2C) or by alterations in the substrate (fig.…”

Section: Euv Photomasks Defect Inspectionmentioning

confidence: 99%

Lensless metrology for semiconductor lithography at EUV

Mochi

Kazazis

Tseng

et al. 2019

Modeling Aspects in Optical Metrology VII

View full text Add to dashboard Cite

show abstract

“…In a separate paper SK Hynix found that the particle adder rate in an NXE:3100 scanner is only 0 to 1 particle per day and that pellicle-less operation may be an better operational mode when the EUV source power exceeds > 300 Watts at intermediate focus 14 .…”

Section: Resistsmentioning

confidence: 99%

Front Matter: Volume 9422

2015

Extreme Ultraviolet (EUV) Lithography VI

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