EUV mask development: material and process

Rau, Jenspeter; Wendt, H.; Mathuni, Josef; Stepper, Christoph; Ehrmann, Albrecht; Kamm, Frank-Michael

doi:10.1117/12.479358

Cited by 4 publications

(1 citation statement)

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“…Among these several candidate techniques, the extreme ultraviolet lithography (EUVL) is the most promising technique for manufacturing ultra-large-scale integration (ULSI) devices for the sub 50-nm technology node [4][5]. The standard EUVL mask usually consists of low thermal expansion material (LTEM) substrate, a molybdenum/silicon (Mo/Si) multilayer, and absorber stack [6].…”

Section: Introductionmentioning

confidence: 99%

Numerical modeling of absorber characteristics for EUVL

Kang

Ahn

et al. 2006

SPIE Proceedings

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The characteristics of various potential absorbers, such as Cr, Ta, and TaN materials were quantitatively investigated by calculating the optical contrast and geometrical width variation of pattern image of 25-nm-width transferred through the exposure system. The intrinsic absorber performance was evaluated by the numerical modeling of the reflectivity on the mask and the aerial image intensity on the wafer. The reflectivity on the mask was calculated for various absorber thicknesses (40-70 nm) using Fresnel equation. For the calculation of the aerial image intensity of pattern features with various absorbers, SOLID-EUV, which is capable of rigorous electromagnetic field computation, was employed. It could be reasonably concluded that the TaN absorber model showed superior optical characteristics compared to other absorber systems, whereas the best performance on the geometrical characteristics was found in the Ta absorber system.

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Section: Introductionmentioning

confidence: 99%

Numerical modeling of absorber characteristics for EUVL

Kang

Ahn

et al. 2006

SPIE Proceedings

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Theoretical investigation of pattern printability of oxidized Si and Ru capping models for extreme ultraviolet lithography (EUVL)

Kang

Ahn

Kim

et al. 2007

Microelectronic Engineering

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Ab initio investigation of interfacial layer formation in the Mo∕Si boundary for extreme ultraviolet lithography

Kang

Chung

2008

Journal of Applied Physics

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The energetics and the electronic structure of the Si∕Mo(110) surface were investigated using the density functional theory calculations in an attempt to clarify the initial stage of silicide layer formation. The energy barriers for the migration of Si adatom to an adjacent hollow site passing the bridge site were calculated to be 0.64eV [Mo (110)] and 0.74eV [Si-substituted Mo (110)]. In order to analyze the bonding nature between Si adatom and Mo (110) surface, layer density of states and total valence electron density were obtained. It can be reasonably inferred that Mo 4d states mainly contributed to the bonding between Mo and Si and, consequently, four Mo–Si covalent bonds were formed around the Si atom at the hollow site.

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EUV mask development: material and process

Cited by 4 publications

References 0 publications

Numerical modeling of absorber characteristics for EUVL

Numerical modeling of absorber characteristics for EUVL

Theoretical investigation of pattern printability of oxidized Si and Ru capping models for extreme ultraviolet lithography (EUVL)

Ab initio investigation of interfacial layer formation in the Mo∕Si boundary for extreme ultraviolet lithography

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