Extreme Ultraviolet (EUV) Lithography VII 2016
DOI: 10.1117/12.2219601
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EUV mask and wafer defectivity: strategy and evaluation for full die defect inspection

Abstract: Over the past few years numerous advancements in EUV Lithography have proven its feasibility of insertion into High Volume Manufacturing (HVM). 1, 2 A lot of progress is made in the area of pellicle development but a commercially solution with related infrastructure is currently unavailable. 3, 4 Due to current mask structure and unavailability of a pellicle, a comprehensive strategy to qualify (native defects) and monitor (adder defects) defectivity on mask and wafer is required for implementing EUV Lithograp… Show more

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Cited by 6 publications
(3 citation statements)
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“…These defects include soft particles bonded to the surface via van der Waals forces, and hard particles which can be embedded in the substrate and leave a pit when removed [ 100 ]. Various pit smoothing techniques have been devised [ 101 ], however, these methods are limited by the ability to analyse the substrate to identify the defects which must be removed [ 102 , 103 ]. Furthermore, the compound effect of multiple mirrors results in low efficiency, with approximately 1–5% of the photons produced from the UV source interacting with the wafer.…”
Section: Conventional Lithographic Techniquesmentioning
confidence: 99%
“…These defects include soft particles bonded to the surface via van der Waals forces, and hard particles which can be embedded in the substrate and leave a pit when removed [ 100 ]. Various pit smoothing techniques have been devised [ 101 ], however, these methods are limited by the ability to analyse the substrate to identify the defects which must be removed [ 102 , 103 ]. Furthermore, the compound effect of multiple mirrors results in low efficiency, with approximately 1–5% of the photons produced from the UV source interacting with the wafer.…”
Section: Conventional Lithographic Techniquesmentioning
confidence: 99%
“…Therefore, a proper mask inspection of defects is necessary to guarantee the throughput required in high volume manufacturing. 4,5 The defects can be sorted as phase or amplitude defects, depending on their effect on the reflected EUV light. Phase defects are usually caused by pits and bumps on the blank substrate or by particles under or inside the multilayer, while amplitude defects are formed during the manufacturing process, commonly on top of the multilayer.…”
Section: Introductionmentioning
confidence: 99%
“…2 In addition, we have demonstrated key aspects of EUV mask infrastructure that provide further confidence in the technology as an HVM solution. 3,4 Nevertheless, the implementation of EUV as part of the integrated patterning process is still a remaining challenge.…”
mentioning
confidence: 99%