EUV lithography for 22nm half pitch and beyond: exploring resolution, LWR, and sensitivity tradeoffs

Putna, E. Steve; Younkin, Todd R.; Leeson, Michael J.; Caudillo, Román; Bacuita, Terence; Shah, Uday; Chandhok, Manish

doi:10.1117/12.879641

Cited by 17 publications

(17 citation statements)

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“…One category includes techniques that either physically or chemically remove material from the sidewalls of the resist to smooth them. Examples include etch trimming, chemical slimming, ozonation, and ion implantation [20,21]. The second category involves processes that chemically add material to the resist sidewalls to smooth them.…”

Section: Post-processing Of Euv Resistmentioning

confidence: 99%

“…Examples include a variety of rinse materials and resist smoothing techniques. [22] The third category involves physical changes, including mild melting, reflow, or shrinkage of the material, and techniques such as laser annealing, VUV curing, and e-beam curing [20]. All of these techniques need to be carefully engineered to avoid significant CD changes, resist top loss, and degradation of CD uniformity control.…”

Section: Post-processing Of Euv Resistmentioning

confidence: 99%

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The Physics of EUV Photoresist and How It Drives Strategies for Improvement

Mark¹,

Cho²,

Petrillo³

2012

J. Photopol. Sci. Technol.

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EUV lithography requires high performance resists. The mechanism of light absorbance and acid generation is very different in EUV resists than in previous generations of chemically amplified resists. Resist absorbance must be driven up instead of down, which will require that new elements be incorporated into the resist. Some hafnium-containing resists have shown promise while maintaining a satisfactory etch resistance. These capabilities need to be built upon, and other metals need to be tested. The physics of EUV light and the small feature sizes involved also mean that the industry will be challenged to overcome noisiness, rather than grayness. This will require better understanding of LWR) and likely post-processing treatment of resists to improve the LWR and process windows.

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Section: Post-processing Of Euv Resistmentioning

confidence: 99%

Section: Post-processing Of Euv Resistmentioning

confidence: 99%

The Physics of EUV Photoresist and How It Drives Strategies for Improvement

Mark¹,

Cho²,

Petrillo³

2012

J. Photopol. Sci. Technol.

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“…Recent advances in these materials and process technologies are largely credited to the cooperation and focused efforts of various sectors of the resist community (e.g., industry consortia, universities, and material/ tool manufacturers). 1,[4][5][6][7][8][9][10] Specifically, industry consortia such as Selete, SEMATECH, IMEC, and recently, EIDEC have and continue to promote very conducive research environments for device manufacturers, universities, resist resin/material suppliers, and tool manufacturers. Such collaborations have led to the investigation and realization of new and exciting resist platforms 5,[11][12][13] and processes.…”

Section: Introductionmentioning

confidence: 99%

Resist Materials and Processes for Extreme Ultraviolet Lithography

Itani¹,

Kozawa

2012

Jpn. J. Appl. Phys.

164

153

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Extreme ultraviolet (EUV) radiation, the wavelength of which is 13.5 nm, is the most promising exposure source for next-generation semiconductor lithography. The development of EUV lithography has been pursued on a worldwide scale. Over the past decade, the development of EUV lithography has significantly progressed and approached its realization. In this paper, the resist materials and processes among the key technologies of EUV lithography are reviewed. Owing to its intensive development, the resist technology has already closely approached the requirements for the 22 nm node. The focus of the development has shifted to the 16 nm node and beyond. Despite the trade-off relationships among resolution, line edge roughness/line width roughness, and sensitivity, the capability of resist technology will go beyond the 16 nm node.

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“…Thus, the investigation of LWR-reduction from the viewpoint of resist processing has become necessary [4] . In recent years, a number of groups have reported resist process enhancements in the form of alternative developer and rinse solutions as possible methods for LWR reduction [5][6][7] . Another method that is being considered is shortening the acid-diffusion length of the photo-acid generator (PAG).…”

Section: Introductionmentioning

confidence: 99%

EUV resist processing with flash-lamp

Santillan¹,

Kaneyama²,

Morita³

et al. 2012

SPIE Proceedings

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The reduction of line width roughness (LWR) remains a difficult issue for very fine patterns obtained with extreme ultraviolet (EUV) lithography. Thus, the investigation of LWR-reduction from the viewpoint of resist processing has become necessary. Alternative bake processes, such as the flash-lamp (FL) has been proven feasible as for application in EUV resists. This work focuses on initial investigations for its use in post-development bake (post bake or PB). A polyhydroxystyrene-acryl hybrid EUV model resist was utilized and comparisons with 'no bake' and conventional hot-plate PB conditions were made. As a result, relatively improved LWR was obtained with FL PB with minimal effect on lithographic performance. Moreover, in the course of these experiments, two types of resist reflow mechanisms assumed to be the primary basis for the LWR improvement achieved, are discussed.

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EUV lithography for 22nm half pitch and beyond: exploring resolution, LWR, and sensitivity tradeoffs

Cited by 17 publications

References 0 publications

The Physics of EUV Photoresist and How It Drives Strategies for Improvement

The Physics of EUV Photoresist and How It Drives Strategies for Improvement

Resist Materials and Processes for Extreme Ultraviolet Lithography

EUV resist processing with flash-lamp

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