Eu
                  3+
          -doped microcavities fabricated by sol–gel process

Bellessa, J.; Rabaste, Sebastien; Plenet, J. C.; Dumas, J.; Mugnier, J.; Marty, Olivier

doi:10.1063/1.1405427

Cited by 67 publications

(48 citation statements)

References 14 publications

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“…Previous studies have shown that sol-gel waveguides can be easily fabricated owing to their high refractive index and that they typically exhibit optical propagation losses of less than 1 dB cm -1 . [15] Such sol-gel matrices have also been found to be excellent hosts for organic chromophores, [16,17] erbium cations, [18,19] and indeed quantum dots (QDs). [20][21][22] Truly optically 'photoluminescence (PL)-active' waveguides have been however ridden with obstacles.…”

Section: Introductionmentioning

confidence: 99%

Luminescence and Amplified Stimulated Emission in CdSe–ZnS‐Nanocrystal‐Doped TiO₂ and ZrO₂ Waveguides

Jasieniak

Pacífico

Signorini

et al. 2007

Adv Funct Materials

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A reproducible route for the preparation of high‐quality CdSe–ZnS‐doped titania and zirconia waveguides is presented. The optical properties of the resultant composite materials are found to be sensitive to the semiconducting properties of the host matrix. Titania‐based composites are seen to be inherently photounstable because of photoelectron injection into the bulk matrix and subsequent nanocrystal (NC) oxidation. In comparison, zirconia composites are significantly more robust with high photoluminescence (PL) retained for annealing temperatures up to 300 °C. Both titania and zirconia composite waveguides exhibit amplified stimulated emission (ASE); however only zirconia‐based waveguides exhibit long‐term photostability (loss of less than 30 % ASE intensity after more than 40 min continuous excitation). We conclude that the low electron affinity of zirconia and its inherent high refractive index makes it an ideal candidate for NC‐based optical waveguides.

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Section: Introductionmentioning

confidence: 99%

Luminescence and Amplified Stimulated Emission in CdSe–ZnS‐Nanocrystal‐Doped TiO₂ and ZrO₂ Waveguides

Jasieniak

Pacífico

Signorini

et al. 2007

Adv Funct Materials

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“…This corresponds to a waveguide loss of 0.009 dB/ cm, which is the lowest loss reported to date for sol-gel silica-on-silicon technology. 14,15 These high quality factors allow the observation of Raman emission with threshold pump powers below a milliwatt. In this case, a single-frequency tunable externalcavity laser operating around 1550 nm band was used to pump the microcavity.…”

mentioning

confidence: 99%

Erbium-doped and Raman microlasers on a silicon chip fabricated by the sol–gel process

Yang¹,

Carmon²,

Min³

et al. 2005

Applied Physics Letters

143

117

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We report high-Q sol-gel microresonators on silicon chips, fabricated directly from a sol-gel layer deposited onto a silicon substrate. Quality factors as high as 2.5ϫ 10 7 at 1561 nm were obtained in toroidal microcavities formed of silica sol-gel, which allowed Raman lasing at absorbed pump powers below 1 mW. Additionally, Er 3+ -doped microlasers were fabricated from Er 3+ -doped sol-gel layers with control of the laser dynamics possible by varying the erbium concentration of the starting sol-gel material. Continuous lasing with a threshold of 660 nW for erbium-doped microlaser was also obtained. Recently, a chip-based silica resonator structure in the form of a microtoroid has demonstrated ultrahigh-Q-factors in the range of 100 million. 1 By coating these high-Q microcavities with erbium-doped sol-gel films 2 or by beginning with erbium implanted silica layers, 3 low threshold rareearth-doped microlasers on-a-chip have been demonstrated. In another study, the realization of integrated Raman microlasers beginning with a layer of thermally-grown silica has been achieved. 4 Microlasers on silicon chips are especially interesting because they are integrable with other optical or electric components. In this work, we demonstrate the possibility of making microlasers directly from the sol-gel layers on the silicon wafer. The sol-gel method for preparing silica and silicate from a metal alkoxide precursor provides a versatile and cost-effective way to fabricate various components on silicon chips. It combines control of composition and microstructure at the molecular level with the ability to shape materials in bulk, fiber, powder, and thin film forms. 5 This technique allows a wide variety of thin films to be deposited on various substrates. In addition, optical devices, including buried-channel erbium-doped waveguide amplifiers, microlenses, one-dimensional photonic crystal devices and external-cavity distributed Bragg reflector ͑DBR͒ laser have been achieved using the sol-gel method. 6-9 Here we report a new method to fabricate both erbium-doped microlasers and Raman microlasers on a silicon chip using sol-gel films as the base material for microtoroid formation. In one series of experiments, erbium-doped sol-gel films are used to create low threshold microlasers. In a second set of experiments, pure silica sol-gel layers are processed into ultrahigh-Q Raman microlasers. Both of these cases demonstrate the ability to use spin coating of sol-gel films as a processing alternative to deposition or oxidation methods for silica layer formation.The sol-gel solution was prepared by hydrolyzing tetraethoxysilane ͑TEOS͒ using water with the molar ratio of water to TEOS around 1-2. Hydrochloric acid was added to make the solution in acid condition. Er 3+ ions were introduced by adding Er͑NO͒ 3 to achieve the desired Er 3+ concentration. After reaction at 70°C for 3 h, a viscous solution was formed. The silica sol-gel film was then deposited on a silicon substrate by the spin-coating method. Different thicknesses of the s...

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“…The thickness e is the parameter which is going to change in the simulations. allow the manufacturing of this structure to test experimentally our results [14].…”

Section: Complex Dispersion Relationmentioning

confidence: 99%

Surface Plasmon - Guided Mode strong coupling

Castanié

Felbacq

Guizal

2012

AEM

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It is shown that it is possible to realize strong coupling between a surface plasmon and a guided mode in a layered structure. The dispersion relation of such a structure is obtained through the S-matrix algorithm combined with the Cauchy integral technique that allows for rigorous computations of complex poles. The strong coupling is demonstrated by the presence of an anticrossing in the dispersion diagram and simultaneously by the presence of a crossing in the loss diagram. The temporal characteristics of the different modes and the decay of the losses in the propagation of the hybridized surface plasmons are studied.

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Eu 3+ -doped microcavities fabricated by sol–gel process

Cited by 67 publications

References 14 publications

Luminescence and Amplified Stimulated Emission in CdSe–ZnS‐Nanocrystal‐Doped TiO₂ and ZrO₂ Waveguides

Luminescence and Amplified Stimulated Emission in CdSe–ZnS‐Nanocrystal‐Doped TiO₂ and ZrO₂ Waveguides

Erbium-doped and Raman microlasers on a silicon chip fabricated by the sol–gel process

Surface Plasmon - Guided Mode strong coupling

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Eu 3+ -doped microcavities fabricated by sol–gel process

Cited by 67 publications

References 14 publications

Luminescence and Amplified Stimulated Emission in CdSe–ZnS‐Nanocrystal‐Doped TiO2 and ZrO2 Waveguides

Luminescence and Amplified Stimulated Emission in CdSe–ZnS‐Nanocrystal‐Doped TiO2 and ZrO2 Waveguides

Erbium-doped and Raman microlasers on a silicon chip fabricated by the sol–gel process

Surface Plasmon - Guided Mode strong coupling

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Luminescence and Amplified Stimulated Emission in CdSe–ZnS‐Nanocrystal‐Doped TiO₂ and ZrO₂ Waveguides

Luminescence and Amplified Stimulated Emission in CdSe–ZnS‐Nanocrystal‐Doped TiO₂ and ZrO₂ Waveguides