Etching of (Ba,Sr)TiO3 film by chlorine plasma

Shibano, Teruo; Takenaga, Takashi; Nakamura, Katsumi; Oomori, Tatsuo

doi:10.1116/1.1286026

Cited by 23 publications

(20 citation statements)

References 5 publications

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“…Secondly, when a binary mixture of chemical active gas and noble gas is used for the etching, BST etch rate shows nonmonotonic dependence on gas mixing ratio. This effect was repeatedly reported in literature, for example, in [3,6,8] for Cl 2 /Ar plasma as well as in [5,9] for CF 4 /Ar gas mixture. In all the cases, it was found that BST etch rate has a maximum at 70-80% Ar while the etch rate in pure Ar plasma exceeds etch rate in pure Cl 2 or CF 4 .…”

Section: Introductionsupporting

confidence: 51%

“…Until now, there are several works devoted to an investigation of etching characteristics of BST thin films using both chlorine-containing and fluorine-containing plasmas [3][4][5][6][7][8][9], including our earlier works [3,4,9]. Summarizing published data, it is possible to underline several common features characterized BST etch process.…”

Section: Introductionmentioning

confidence: 94%

“…Summarizing published data, it is possible to underline several common features characterized BST etch process. First is low volatility of both metal-chlorides and metal-fluorides, especially for Ba and Sr. Choi et al [3], Shibano et al [5] and Kang et al [9] reported about the accumulation of reaction products on the etched surfaces using Cl 2 -based as well as CF 4 -based etching chemistries. As a result, etching products form a residue layer, which obstructs the access of active species and decreases the etch rate [3,[7][8][9].…”

Section: Introductionmentioning

confidence: 99%

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Etching mechanisms of (Ba,Sr)TiO3 thin films in CF4/Ar inductively coupled plasma

Efremov

Kim

et al. 2004

Microelectronic Engineering

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Section: Introductionsupporting

confidence: 51%

Section: Introductionmentioning

confidence: 94%

Section: Introductionmentioning

confidence: 99%

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Etching mechanisms of (Ba,Sr)TiO3 thin films in CF4/Ar inductively coupled plasma

Efremov

Kim

et al. 2004

Microelectronic Engineering

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“…This is confirmed by the corresponding communication of redeposits which are proof of the nonvolatility of the claimed platinum compound [6,[9][10][11][12]. Hence, real chemical strategies have to be applied.…”

Section: Chemical Considerationsmentioning

confidence: 71%

Residual free reactive ion etching of the Bell contact Ti/Pt/Au

Franz

Kachel

Sotier

2002

Materials Science in Semiconductor Processing

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The etching of the complete Bell contact consisting of a layer of Ti/Pt/Au was performed in highly reactive plasmas containing Cl 2 for Ti, PF 3 =NF 3 for Pt, and Cl 2 and/or BCl 3 for Au. All the constituents of the Bell contact form volatile compounds in either capacitively-coupled low-density plasmas or high-density plasmas generated by electron cyclotron resonance. This is conditio sine qua non for surfaces and sidewalls which have to remain free of any residues. r

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“…Thus, identifying by-product compositions is important for optimizing etching processes. There are several reported studies on the etching of BST thin films using chlorine and fluorine-based plasma chemistry [9][10][11][12][13][14][15][16][17]. There are also several reports investigating the properties of CF 4 /Ar plasmas both experimentally and theoretically.…”

mentioning

confidence: 95%

Etching mechanism of barium strontium titanate (BST) thin films in CHF3/Ar plasma

et al. 2011

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Reactive ion etching was used to etch barium strontium titanate thin films in a CHF 3 /Ar plasma. BST surfaces before and after etching were analyzed by X-ray photoelectron spectroscopy to investigate the reaction ion etching mechanism, and chemical reactions had occurred between the F plasma and the Ba, Sr and Ti metal species. Fluorides of these metals were formed and remained on the surface during the etching process. Ti was almost completely removed because the TiF 4 by-product is volatile. Minor quantities of TiF could still be detected by narrow scan X-ray photoelectron spectra, and TiF was thought to be present in the form of a metal-oxy-fluoride. These species were investigated from O1s spectra, and a fluoride-rich surface was formed during etching. BaF 2 and SrF 2 residues were difficult to remove because of their high boiling point. The etching rate was limited to 12.86 nm/min. CF polymers were not found on the surface, indicating that the removal of BaF 2 and SrF 2 was important for further etching. A 1-min Ar/15 plasma physical sputtering was carried out for every 4 min of surface etching, which effectively removed remaining surface residue. Sequential chemical reaction and sputtered etching is an effective etching method for barium strontium titanate films. barium strontium titanate, reaction ion etching, X-ray photoelectron spectroscopy, plasma Citation:Dai L P, Wang S Y, Shu P, et al. Etching mechanism of barium strontium titanate (BST) thin films in CHF 3 /Ar plasma.With the rapid development of electronics and information technology, there is a great demand for high K dielectric materials. An example is ferroelectric high-K materials [1-4] required for many microwave applications [5]. Ferroelectric thin films possessing high permittivity are of great interest for application to high-K dynamic random access memory (DRAM) cells. Barium strontium titanate (BST) thin film ferroelectric materials are promising as capacitor dielectric components in future high density DRAM devices, because of their high dielectric constant, low leakage current, low temperature coefficient in electrical processes, small dielectric loss and lack of fatigue/aging [6][7][8]. BST can potentially provide significant improvements in device performance; however, several problems need resolving to realize highly integrated DRAMs involving BST thin films. To efficiently integrate BST thin films into Si-based circuitry, an etching process for micro-patterning technology must be developed. The etching mechanism includes two major processes: ion-assisted etching reaction; and sputtering process to remove the reaction by-products. Thus, identifying by-product compositions is important for optimizing etching processes. There are several reported studies on the etching of BST thin films using chlorine and fluorine-based plasma chemistry [9][10][11][12][13][14][15][16][17]. There are also several reports investigating the properties of CF 4 /Ar plasmas both experimentally and theoretically. Unfortunately, the etching mechanism of BS...

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Etching of (Ba,Sr)TiO3 film by chlorine plasma

Cited by 23 publications

References 5 publications

Etching mechanisms of (Ba,Sr)TiO3 thin films in CF4/Ar inductively coupled plasma

Etching mechanisms of (Ba,Sr)TiO3 thin films in CF4/Ar inductively coupled plasma

Residual free reactive ion etching of the Bell contact Ti/Pt/Au

Etching mechanism of barium strontium titanate (BST) thin films in CHF3/Ar plasma

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