A protocol is proposed for the solvent-free on-surface synthesis of covalent organic framework monolayers by condensation of diboronic acids. Monomers are vapor-deposited and water is used for equilibrium regulation. Samples are characterized on progressively smaller length scales by light microscopy, Scanning Electron Microscopy, and Scanning Tunneling Microscopy.
Nuclear magnetic resonance measurements are reported for liquid Na-NaBr, Cs-CsCl, and Cs-Csl solutions containing less than 10 mole% metal. Correlation of the resonance shifts, relaxation rates, and dc electrical conductivity shows that the electronic mobility is independent of concentration in Na-NaBr, in sharp contrast with the cesium solutions. The results provide an explanation for the apparently anomalous electronic conductivity observed in liquid-sodium-sodium-halide solutions.
The susceptibility was measured by means of the Faraday method. Compared to the work on NaSb, the experimental accuracy of the apparatus was improved. The force measurement was done with an analytical balance in a field of 1 . 2 T with an average field gradient (1/2) a (Bo)/a z = 0.15 T /cm. The .samples (Na: 99.95%, Bi: 99.999%) were sealed in molybdenum containers under vacuum of x~O -~ cm /mol. Fig. 1 shows the mole susceptibility of Nal-xBix as a function of the concentration x at 900 OC (in the liquid state).
2Pa. The maximal e r r o r in the susceptibility was 21. I x 3 In the region between the two pure metals Na (paramagnetic) and Bi (weakly diamagnetic) the transition of the susceptibility is not smooth as would be expected from the free electron model (FEM). Instead, there is a distinct minimum of x = -10x10 formula Na3Bi. This behaviour is similar to that of Na3Sb, though the dip in -6 3 c m /mol at x = 0.25 corresponding to the stoichiometric 1) D-8046 Garching, BRD.
Progress in dry etching processes [reactive ion etching (RIE) and electron cyclotron resonance etching, (ECRE)] is described, concerning etch geometry and fidelity of pattern transfer by using advanced techniques to produce masks of photoresist and A1203 or SiQ. In contrast to capacitively coupled hydrogen/methane discharges, in which the etch rate of GaAs is significantly lower than that of InP, in ECR discharges by the simple variation of the gas composition, the etch rate of GaAs can be driven to values comparable with InP. The different on-line monitoring techniques are compared. It is shown that optical emission spectroscopy can be applied successfully even with sample areas of about 2 cm ~ at etch rates of 50 nm/min.
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